SEMICONDUCTOR
TECHNICAL DATA
General Description
This Super Junction MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
・V
DSS
=600V, I
D
=11A
・Drain-Source
ON Resistance :
R
DS(ON)
(Max)=0.38Ω @V
GS
=10V
・Qg(typ.)=
20nC
H
G
F
F
KP11N60D
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
A
C
K
D
L
B
J
E
N
M
DIM MILLIMETERS
_
A
6.60 + 0.20
_
6.10 + 0.20
B
_
5.34 + 0.30
C
_
D
0.70 + 0.20
_
E
2.70 + 0.15
_
2.30 + 0.10
F
0.96 MAX
G
0.90 MAX
H
_
1.80 + 0.20
J
_
2.30 + 0.10
K
_
0.50 + 0.10
L
_
M
0.50 + 0.10
0.70 MIN
N
0.1 MAX
O
MAXIMUM RATING
(Tc=25℃)
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
@T
C
=25℃
Drain Current
@T
C
=100℃
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25℃
P
D
Derate above 25℃
T
j
T
stg
0.56
150
-55½150
W/℃
℃
℃
I
DP
E
AS
E
AR
dv/dt
SYMBOL
V
DSS
V
GSS
I
D
6.9*
24*
195
4.0
4.5
69.4
mJ
mJ
V/ns
W
A
RATING
600
±30
11*
UNIT
V
V
1
2
3
1. GATE
2. DRAIN
3. SOURCE
O
DPAK (1)
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance,
Junction-to-Ambient
R
thJC
R
thJA
1.8
110
℃/W
℃/W
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
D
G
S
2013. 5. 15
Revision No : 0
1/6
KP11N60D
ELECTRICAL CHARACTERISTICS
(Tc=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
BV
DSS
ΔBV
DSS
/ΔT
j
I
DSS
V
th
I
GSS
R
DS(ON)
I
D
=250μ V
GS
=0V
A,
I
D
=250μ Referenced to 25℃
A,
V
DS
=600V, V
GS
=0V
V
DS
=V
GS
, I
D
=250μ
A
V
GS
=±30V, V
DS
=0V
V
GS
=10V, I
D
=5.5A
600
-
-
2.0
-
-
-
0.6
-
-
-
0.33
-
-
10
4.0
±100
0.38
V
V/℃
μ
A
V
nA
Ω
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
V
GS
<V
th
I
SP
V
SD
t
rr
Q
rr
I
S
=11A, V
GS
=0V
I
S
=11A, V
GS
=0V,
s
dIs/dt=100A/μ
-
-
-
-
-
-
300
3.0
44
1.4
-
-
V
ns
μ
C
-
-
11
A
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
V
DS
=25V, V
GS
=0V, f=1.0MHz
V
DD
=300V
I
D
=11A
R
G
=25Ω
(Note4,5)
-
-
-
-
-
65
25
850
800
2.0
-
-
-
-
-
pF
V
DS
=480V, I
D
=11A
V
GS
=10V
(Note 5)
-
-
-
-
-
20
4.0
9.0
25
35
-
-
-
-
-
ns
nC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =3mH, I
S
=11A, V
DD
=50V, R
G
=25Ω, Starting T
j
=25℃.
Note 3) I
S
≤11A,
dI/dt≤100A/㎲, V
DD
≤BV
DSS
, Starting T
j
=25℃.
Note 4) Pulse Test : Pulse width
≤
10㎲, Duty Cycle
≤
2%.
Note 5) Essentially independent of operating temperature.
Marking
1
KP11N60
001
D
2
1
PRODUCT NAME
2
LOT NO
2013. 5. 15
Revision No : 0
2/6
KP11N60D
Fig1. I
D
- V
DS
100
V
DS
=20V
V
GS
=10V
V
GS
=6V
V
GS
=5V
Fig2. I
D
- V
GS
Drain Current I
D
(A)
10
Drain Current I
D
(A)
10
1
100
C
10
0
25
C
1
0.1
0.1
1
10
100
10
-1
2
4
6
8
10
Drain - Source Voltage V
DS
(V)
Gate - Source Voltage V
GS
(V)
Fig3. BV
DSS
- Tj
Normalized Breakdown Voltage BV
DSS
1.3
1.2
V
GS
= 0V
I
DS
= 250
Fig4. R
DS(ON)
- I
D
V
GS
=5V
On - Resistance R
DS(ON)
(Ω)
1.0
0.8
0.6
0.4
V
GS
=10V
1.2
1.1
1.0
0.2
0
0
0.9
0
25
50
75
100
125
150
5
10
15
20
Junction Temperature Tj ( C )
Drain Current I
D
(A)
Fig5. I
S
- V
SD
10
2
Fig6. R
DS(ON)
- Tj
3.0
V
GS
=10V
I
DS
= 5.5A
Reverse Drain Current I
S
(A)
100
C
10
1
25
C
Normalized On Resistance
2.5
2.0
1.5
1.0
0.5
10
0
10
-1
0.4
0.6
0.8
1.0
1.2
1.4
1.8
0.0
-100
-50
0
50
100
150
Source - Drain Voltage V
SD
(V)
Junction Temperature Tj ( C)
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Revision No : 0
3/6
KP11N60D
Fig 7. C - V
DS
10
4
12
I
D
=11A
Fig8. Qg- V
GS
Gate - Source Voltage V
GS
(V)
Capacitance (pF)
10
3
Ciss
10
8
6
4
2
0
0
4
8
12
16
20
24
V
DS
= 480V
10
2
Coss
10
1
Crss
1
0
10
20
30
40
Drain - Source Voltage V
DS
(V)
Gate - Charge Qg (nC)
Fig9. Safe Operation Area
10
2
Drain Current ID (A)
10
1
10
100
10
0
Operation in this R
area is limited by
10
-1
1
DS(ON)
10
DC
10
-2
10
0
10
1
10
2
10
3
Drain - Source Voltage V
DS
(V)
Fig10. Transient Thermal Response Curve
10
1
Transient Thermal Resistance
10
0
Duty=0.5
0.1
0.2
P
DM
t
1
t
2
Single Pulse
10
-1
0.05
0.02
0.01
- R
th(j-c)
= 1.8 C/W Max.
- Duty Factor, D= t
1
/t
2
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-5
10
-4
TIME (sec)
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Revision No : 0
4/6
KP11N60D
Fig11. Gate Charge
VGS
10 V
ID
Fast
Recovery
Diode
0.8 VDSS
1.0 mA
ID
Q
V
DS
VGS
Qgs
Qgd
Qg
Fig12. Single Pulsed Avalanche Energy
1
EAS=
LI
AS2
2
BV
DSS
BV
DSS
- V
DD
BV
DSS
L
I
AS
50V
25Ω
V
DS
10 V
VGS
I
D
(t)
V
DD
V
DS
(t)
Time
tp
Fig13. Resistive Load Switching
V
DS
90%
RL
0.5 VDSS
25
Ω
VDS
10V
VGS
V
GS
10%
t
d(off)
t
d(on)
t
on
tr
t
off
tf
2013. 5. 15
Revision No : 0
5/6
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