SEMICONDUCTOR
TECHNICAL DATA
General Description
It s Mainly Suitable for Load Switching Cell Phones, Battery Powered
Systems and Level-Shifter.
KML0D3P20TV
P-Ch Trench MOSFET
FEATURES
・V
DSS
=-20V, I
D
=-0.3A
・Drain-Soure
ON Resistance
: R
DS(ON)
=1.2Ω @ V
GS
=-4.5V
: R
DS(ON)
=1.6Ω @ V
GS
=-2.5V
: R
DS(ON)
=2.7Ω @ V
GS
=-1.8V
_
+
_
+
_
+
_
+
_
+
_
+
_
+
MAXIMUM RATING
(Ta=25℃)
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
DC @T
A
=25℃
Drain Current
DC @T
A
=85℃
Pulsed
Source-Drain Diode Current
Drain Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
I
DP
I
S
P
D
*
T
j
T
stg
R
thJA
*
SYMBOL
V
DSS
V
GSS
I
D
*
-210
mA
-650
125
170
150
-55½150
730
mW
℃
℃
℃/W
P-Ch
-20
±6
-300
UNIT
V
V
Note 1) *Surface Mounted on FR4 Board, t≤5sec
2013. 2. 25
Revision No : O
1/2
KML0D3P20TV
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
CHARACTERISTIC
Static
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Leakage Current
Gate Threshold Voltage
BV
DSS
I
DSS
I
GSS
V
th
I
D
= -250μ V
GS
=0V
A,
V
GS
=0V, V
DS
= -16V
V
GS
=±4.5V, V
DS
=0V
V
DS
=V
GS,
I
D
= -250μ
A
V
GS
= -4.5V, I
D
= -300mA
Drain-Source ON Resistance
R
DS(ON)
*
V
GS
= -2.5V, I
D
= -250mA
V
GS
= -1.8V, I
D
= -150mA
Forward Transconductance
Source-Drain Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Q
g
*
Q
gS
*
Q
gd
*
t
d(on)
*
t
r
t
d(off)
*
t
f
V
DD
= -10V, V
GS
= -4.5V
I
D
= -200mA, R
G
=10Ω
V
DS
= -10V, I
D
= -250mA, V
GS
= -4.5V
-
-
-
-
-
-
-
1500
150
450
5
3
15
8
-
-
-
-
-
ns
-
-
pC
g
fs
*
V
SD
*
V
DS
= -10V, I
D
= -300mA
I
S
= -150mA, V
GS
=0V
-20
-
-
-0.45
-
-
-
-
-
-
-0.3
±1.0
-
0.80
1.20
1.80
0.4
-0.8
-
-100
±2.0
-1.0
1.20
1.60
2.70
-
-1.2
S
V
Ω
V
nA
μ
A
V
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Note 2) *Pulse test : Pulse width≤300㎲, Duty Cycle≤2%.
2013. 2. 25
Revision No : O
2/2
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