CNY17-1X, CNY17-2X, CNY17-3X,
CNY17-4X, CNY17-5X CNY17-1,
CNY17-2, CNY17-3, CNY17-4,
OPTICALLY COUPLED
ISOLATOR
PHOTOTRANSISTOR OUTPUT
APPROVALS
UL recognised, File No. E91231
Package System GG
'X' SPECIFICATION APPROVALS
VDE 0884 in 3 available lead forms : -
- STD
-
G form
-
SMD approved to CECC 00802
Certified to EN60950 by
Nemko - Certificate No. P01102464
DESCRIPTION
The CNY17-1, CNY17-2, CNY17-3, CNY17-4,
CNY17-5 series of optically coupled isolators
consist of an infrared light emitting diode and a
NPN silicon photo transistor in a standard 6 pin
dual in line plastic package.
FEATURES
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
High BV
CEO
(70V min)
High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
All electrical parameters 100% tested
Custom electrical selections available
APPLICATIONS
DC motor controllers
Industrial systems controllers
Measuring instruments
Signal transmission between systems of
different potentials and impedances
2.54
7.0
6.0
1.2
7.62
6.62
4.0
3.0
0.5
3.0
0.5
3.35
1
2
3
Dimensions in mm
6
5
4
7.62
13°
Max
0.26
ABSOLUTEMAXIMUMRATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUTDIODE
Forward Current
Reverse Voltage
Power Dissipation
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Collector-base Voltage BV
CBO
Emitter-collector Voltage BV
ECO
Collector Current
Power Dissipation
POWER DISSIPATION
70V
70V
7V
50mA
160mW
60mA
6V
105mW
OPTION SM
SURFACE MOUNT
OPTION G
7.62
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ISOCOM COMPONENTS 2004 LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1UD England
Tel: (01429)863609 Fax : (01429) 863581 e-mail
sales@isocom.co.uk http://www.isocom.com
17/7/08
DB91081
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Current (I
R
)
Output
Collector-emitter Breakdown (BV
CEO
)
Collector-base Breakdown (BV
CBO
)
Emitter-collector Breakdown (BV
ECO
)
Collector-emitter Dark Current (I
CEO
)
Current Transfer Ratio (CTR) (Note 2)
CNY17-1
CNY17-2
CNY17-3
CNY17-4
CNY17-5
Collector-emitter SaturationVoltageV
CE(SAT)
Input to Output Isolation Voltage V
ISO
5300
Input-output Isolation Resistance R
ISO
5x10
10
70
70
7
50
MIN TYP MAX UNITS
1.2
1.65
10
V
μA
V
V
V
nA
TEST CONDITION
I
F
= 60mA
V
R
= 6V
I
C
= 1mA ( Note 2 )
I
C
= 100μA
I
E
= 100μA
V
CE
= 10V
Coupled
40
63
100
160
200
80
125
200
320
400
0.4
%
%
%
%
%
V
V
RMS
Ω
10mA I
F
, 5V V
CE
10mA I
F
, 5V V
CE
10mA I
F
, 5V V
CE
10mA I
F
, 5V V
CE
10mA I
F
, 5V V
CE
10mA I
F
, 2.5mA
See note 1
V
IO
= 500V (note 1)
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
TYPICAL SWITCHING CHARACTERISTICS
1.
Linear Operation
(
without saturation) Fig
1.
2.
Switching Operation (with saturation) Fig 2
I
F
= 10mA, V
CC
= 5V, R
L
= 75Ω
Turn-on Time
Rise Time
Turn-off Time
Fall Time
Cut-off Frequency
t
on
t
r
t
off
t
f
F
CO
V
CC
= 5V, R
L
= 1kΩ
GROUP
Turn-on Time t
on
t
r
Rise Time
Turn-off Time t
off
t
f
Fall Time
V
CESAT
UNITS
3.0
2.0
2.3
2.0
250
μs
μs
μs
μs
kHz
-1
-4
-2 and -3
(I
F
=20mA) (I
F
=10mA) (I
F
=5mA)
3.0
2.0
18
11
4.2
3.0
23
14
< 0.4
6.0
4.6
25
15
UNITS
μs
μs
μs
μs
V
V
CC
= 5.0V
R
L
= 75Ω
OUTPUT
V
CC
= 5.0V
R
L
= 1kΩ
OUTPUT
INPUT
t
on
t
r
OUTPUT
10%
90%
10%
90%
t
off
t
f
FIG 1
17/7/08
FIG 2
DB91081m-AAS/A8
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
Collector Current vs. Collector-emitter Voltage
( normalised to CNY17-3 )
50
Collector current I
C
(mA)
T
A
= 25°C
150
40
30
20
10
50
30
20
15
10
100
50
I
F
= 5mA
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
80
Current transfer ratio CTR (%)
0
0
2
4
6
8
10
Collector-emitter voltage V
CE
( V )
Current Transfer Ratio vs. Forward Current
320
280
240
200
160
120
80
40
0
-30
0
25
50
75
100
125
1
2
5
10
20
50
Ambient temperature T
A
( °C )
Relative Current Transfer Ratio
vs. Ambient Temperature
Forward current I
F
(mA)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
DB91081m-AAS/A8
70
Forward current I
F
(mA)
V
CE
= 5V
T
A
= 25°C
CNY17-5
CNY17-4
CNY17-3
CNY17-2
CNY17-1
60
50
40
30
20
10
0
Relative current transfer ratio
1.5
I
F
= 10mA
V
CE
= 5V
Collector-emitter saturation voltage V
CE(SAT)
(V)
I
F
= 10mA
I
C
= 2.5mA
1.0
0.5
0
-30
17/7/08
0
25
50
75
100
Ambient temperature T
A
( °C )
电子竞赛
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
