Preliminary
Datasheet
RJK03N4DPA
30V, 45A, 2.4mΩmax.
Built in SBD N Channel Power MOS FET
High Speed Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
Pb-free
Halogen-free
R07DS0785EJ0200
Rev.2.00
Feb 12, 2013
Outline
RENESAS Package code: PWSN0008DE-A
(Package name: WPAK(3F))
5 6 7 8
D D D D
5 6 7 8
4
G
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tch = 25C, Rg
50
3. Tc = 25C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP Note 2
E
AS Note 2
Pch
Note3
ch-c
Note3
Tch
Tstg
Ratings
30
±20
45
180
45
19
36.1
45
2.78
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0785EJ0200 Rev.2.00
Feb 12, 2013
Page 1 of 6
RJK03N4DPA
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
30
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
2.0
2.4
114
3780
630
375
1.5
29.4
9.6
10.0
6.7
4.6
66.8
21.5
0.40
9.4
Max
—
± 0.5
1
2.5
2.4
3.2
—
5290
—
—
3.0
—
—
—
—
—
—
—
—
—
Unit
V
A
mA
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
= ±20 V, V
DS
= 0
V
DS
= 24 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 22.5A, V
GS
= 10 V
Note4
I
D
= 22.5A, V
GS
= 4.5 V
Note4
I
D
= 22.5A, V
DS
= 5 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DD
= 10 V
V
GS
= 4.5 V
I
D
= 45 A
V
GS
= 10 V, I
D
= 22.5A
V
DD
10 V
R
L
= 0.44
Rg = 4.7
I
F
= 2 A, V
GS
= 0
Note4
I
F
=45 A, V
GS
= 0
di
F
/ dt = 500 A/
s
R07DS0785EJ0200 Rev.2.00
Feb 12, 2013
Page 2 of 6
RJK03N4DPA
Preliminary
Main Characteristics
Power vs. Temperature Derating
80
1000
Maximum Safe Operation Area
Channel Dissipation Pch (W)
60
Drain Current I
D
(A)
100
1m
s
40
10
PW = 10 ms
DC
Op
20
1
Operation in
this area is
limited by R
DS(on)
Tc = 25 °C
1 shot Pulse
1
era
tio
n
0
50
100
150
200
0.1
0.1
10
100
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
50
4.5 V
10 V
2.7 V
50
Typical Transfer Characteristics
V
DS
= 5 V
Pulse Test
Pulse Test
2.6 V
Drain Current I
D
(A)
30
2.5 V
Drain Current I
D
(A)
40
40
30
20
20
10
10
25°C
Tc = 75°C
–25°C
V
GS
= 2.4 V
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Gate to Source Voltage V
GS
(V)
Static Drain to Source On State Resistance
vs. Drain Current
100
Drain to Source Saturation Voltage
V
DS(on)
(mV)
160
Pulse Test
120
30
Pulse Test
80
10
40
I
D
= 20 A
10 A
5A
3
V
GS
= 4.5 V
10 V
0
4
8
12
16
20
1
1
3
10
30
100
300 1000
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
R07DS0785EJ0200 Rev.2.00
Feb 12, 2013
Page 3 of 6
RJK03N4DPA
Static Drain to Source On State Resistance
vs. Temperature
10
Pulse Test
10000
3000
Preliminary
Static Drain to Source On State Resistance
R
DS (on)
(mΩ)
Typical Capacitance vs.
Drain to Source Voltage
Capacitance C (pF)
8
Ciss
1000
Coss
300
Crss
100
30
6
I
D
= 5 A, 10 A, 20 A
4
V
GS
= 4.5 V
2
10 V
0
–25
0
25
50
5 A, 10 A, 20 A
75
100 125 150
10
0
V
GS
= 0
f = 1 MHz
10
20
30
Case Temperature
Tc
(
°
C)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
50
Reverse Drain Current vs.
Source to Drain Voltage
20
50
Gate to Source Voltage V
GS
(V)
V
GS
16
Reverse Drain Current I
DR
(A)
I
D
= 45 A
10 V
40
5V
Pulse Test
40
V
DD
= 25 V
10 V
30
V
DS
12
30
20
8
20
V
GS
= 0, –5 V
10
V
DD
= 25 V
10 V
0
20
40
60
80
4
10
0
0
100
0
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nc)
Source to Drain Voltage V
SD
(V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
50
Avalanche Energy E
AS
(mJ)
40
I
AS
= 19 A
V
DD
= 15 V
duty < 0.1%
Rg
≥
50
Ω
30
20
10
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
R07DS0785EJ0200 Rev.2.00
Feb 12, 2013
Page 4 of 6
RJK03N4DPA
Normalized Transient Thermal Impedance vs. Pulse Width
3
Preliminary
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
0.03
θch
– c (t) =
γ
s (t) •
θch
– c
θch
– c = 2.78°C/W, Tc = 25°C
P
DM
PW
T
1m
10 m
100 m
1
10
D=
PW
T
2
0.0
lse
1
t pu
0.0
ho
1s
0.01
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform
1
2
L
•
I
AP2
•
V
DSS
V
DSS
– V
DD
V
(BR)DSS
I
AP
V
DD
V
DS
V
DS
Monitor
L
I
AP
Monitor
E
AS
=
Rg
D. U. T
I
D
Vin
15 V
0
V
DD
Switching Time Test Circuit
Vin Monitor
D.U.T.
Rg
R
L
V
DS
= 10 V
Vin
Vout
Vin
10 V
Vout
Monitor
Switching Time Waveform
90%
10%
10%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0785EJ0200 Rev.2.00
Feb 12, 2013
Page 5 of 6
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
