RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, THIN, MINIMOLD PACKAGE-6
参数名称 | 属性值 |
厂商名称 | NEC(日电) |
包装说明 | THIN, MINIMOLD PACKAGE-6 |
Reach Compliance Code | unknown |
其他特性 | LOW NOISE |
最大集电极电流 (IC) | 0.03 A |
基于收集器的最大容量 | 0.7 pF |
集电极-发射极最大电压 | 6 V |
配置 | SEPARATE, 2 ELEMENTS |
最高频带 | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码 | R-PDSO-G6 |
JESD-609代码 | e6 |
元件数量 | 2 |
端子数量 | 6 |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
峰值回流温度(摄氏度) | 260 |
极性/信道类型 | NPN |
认证状态 | Not Qualified |
表面贴装 | YES |
端子面层 | TIN BISMUTH |
端子形式 | GULL WING |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | 10 |
晶体管应用 | AMPLIFIER |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 12000 MHz |
UPA832TFFB-T1 | UPA832TFFB | UPA832TF-T1 | |
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描述 | RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, THIN, MINIMOLD PACKAGE-6 | RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, THIN, MINIMOLD PACKAGE-6 | RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, THIN, MINIMOLD PACKAGE-6 |
厂商名称 | NEC(日电) | NEC(日电) | NEC(日电) |
包装说明 | THIN, MINIMOLD PACKAGE-6 | SMALL OUTLINE, R-PDSO-G6 | THIN, MINIMOLD PACKAGE-6 |
Reach Compliance Code | unknown | unknown | unknown |
其他特性 | LOW NOISE | LOW NOISE | LOW NOISE |
最大集电极电流 (IC) | 0.03 A | 0.03 A | 0.03 A |
基于收集器的最大容量 | 0.7 pF | 0.7 pF | 0.7 pF |
集电极-发射极最大电压 | 6 V | 6 V | 6 V |
配置 | SEPARATE, 2 ELEMENTS | SEPARATE, 2 ELEMENTS | SEPARATE, 2 ELEMENTS |
最高频带 | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码 | R-PDSO-G6 | R-PDSO-G6 | R-PDSO-G6 |
元件数量 | 2 | 2 | 2 |
端子数量 | 6 | 6 | 6 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | NPN | NPN | NPN |
认证状态 | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES |
端子形式 | GULL WING | GULL WING | GULL WING |
端子位置 | DUAL | DUAL | DUAL |
晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER |
晶体管元件材料 | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 12000 MHz | 12000 MHz | 12000 MHz |
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