Preliminary
Datasheet
RJK4532DPH-E0
450V - 4A - MOS FET
High Speed Power Switching
Features
Low on-state resistance
R
DS(on)
= 1.9
typ. (at I
D
= 2.0 A, V
GS
= 10 V, Ta = 25C)
Low drive current
High speed switching
R07DS1038EJ0100
Rev.1.00
Mar 15, 2013
Outline
RENESAS Package code: PRSS0004ZJ-B
(Package name: TO-251)
4
1.
2.
3.
4.
Gate
Drain
Source
Drain
D
G
12
3
S
Absolute Maximum Ratings
(Ta = 25C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal Impedance
Channel temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. Value at Tc = 25C
3. STch = 25C, Tch
150C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse) Note1
I
DR
I
DR (pulse)Note1
I
AP Note3
E
AR Note3
Pch
Note 2
ch-c
Tch
Tstg
Value
450
30
4
16
4
16
3
0.5
40.3
3.1
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS1038EJ0100 Rev.1.00
Mar 15, 2013
Page 1 of 6
RJK4532DPH-E0
Preliminary
Electrical Characteristics
(Ta = 25C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note:
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Min
450
—
—
3.5
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
1.9
280
36
4
9.0
4.5
20.0
5.0
9.0
2.0
4.5
0.9
215
Max
—
1
0.1
4.5
2.3
—
—
—
—
—
—
—
—
—
—
1.5
—
Unit
V
A
A
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test Conditions
I
D
= 1 mA, V
GS
= 0
V
DS
= 450 V, V
GS
= 0
V
GS
=
30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 2 A, V
GS
= 10 V
Note 4
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 2 A
V
GS
= 10 V
R
L
= 113
Rg = 10
V
DD
= 360 V
V
GS
= 10 V
I
D
= 4 A
I
F
= 4 A, V
GS
= 0
Note 4
I
F
= 4 A, V
GS
= 0
di
F
/dt = 100 A/s
4. Pulse test
5. Since this device is equipped with high voltage FET chip (V
DSS
600
V), high voltage may be supplied.
Therefore, please be sure to confirm about Electric discharge between Drain terminal and other terminal.
6. This device is sensitive to electrostatic discharge.
It is recommended to adopt appropriate cautions when handling this product.
R07DS1038EJ0100 Rev.1.00
Mar 15, 2013
Page 2 of 6
RJK4532DPH-E0
Preliminary
Main Characteristics
Maximum Safe Operation Area
100
8
Tc = 25°C
1 shot
Ta = 25°C
Pulse Test
Typical Output Characteristics
I
D
(A)
I
D
(A)
6
9, 10 V
7V
6V
5.6 V
10
10
Drain Current
Drain Current
PW
μ
s
=
4
10
0
1
Operation in this
area is limited by
R
DS(on)
0.1
1
10
μ
s
5.5 V
5.4 V
2
5.2 V
V
GS
= 5 V
0
4
8
12
16
20
100
1000
0
Drain to Source Voltage
V
DS
(V)
Drain to Source Voltage
V
DS
(V)
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
I
D
(A)
5
4
3
2
1
0
Drain to Source on State Resistance
R
DS(on)
(Ω)
6
10
Drain Current
1
Ta = 75°C
25°C
−25°C
2
4
6
8
10
0.1
0.1
V
GS
= 10 V
Ta = 25°C
Pulse Test
1
10
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
6
5
4
3
2
2A
1
0
−25
1A
Body-Drain Diode Reverse
Recovery Time (Typical)
I
D
= 4 A
Reverse Recovery Time trr (ns)
V
GS
= 10 V
Pulse Test
1000
100
di / dt = 100 A /
μs
V
GS
= 0, Ta = 25°C
10
0.1
1
10
0
25
50
75
100 125 150
Case Temperature
Tc (°C)
Reverse Drain Current
I
DR
(A)
R07DS1038EJ0100 Rev.1.00
Mar 15, 2013
Page 3 of 6
RJK4532DPH-E0
Typical Capacitance vs.
Drain to Source Voltage
V
DS
(V)
1000
Ciss
Preliminary
Dynamic Input Characteristics (Typical)
I
D
= 4 A
Ta = 25°C
V
DD
= 360 V
200 V
100 V
V
GS
12
Capacitance C (pF)
600
Drain to Source Voltage
400 V
DS
8
Coss
10
Crss
1
0
V
GS
= 0, f = 1 MHz, Ta = 25°C
40
80
120
160
200
200
V
DD
= 360 V
200 V
100 V
0
2
4
6
8
4
0
0
10
Drain to Source Voltage
V
DS
(V)
Gate Charge
Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
16
6
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
I
DR
(A)
Gate to Source Cutoff Voltage
V
GS(off)
(V)
12
V
GS
= 0 V
Ta = 25°C
Pulse Test
5
4
3
2
1
V
DS
= 10 V
0
−25
0
25
I
D
= 10 mA
Reverse Drain Current
8
1 mA
0.1 mA
4
0
0
0.4
0.8
1.2
1.6
50
75
100 125 150
Source to Drain Voltage
V
SD
(V)
Case Temperature
Tc (°C)
R07DS1038EJ0100 Rev.1.00
Mar 15, 2013
Page 4 of 6
Gate to Source Voltage
100
V
GS
(V)
800
16
RJK4532DPH-E0
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
2
Tc = 25°C
1
D=1
Preliminary
0.5
0.5
0.2
0.1
5
0.0
θ
ch – c(t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 2.57°C/W, Tc = 25°C
P
DM
D=
PW
T
10 m
100 m
1
10
100
PW
T
0.2
0.02
0.01
1 shot pulse
0.1
100
μ
1m
Pulse Width
PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 225 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS1038EJ0100 Rev.1.00
Mar 15, 2013
Page 5 of 6
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