Preliminary
Datasheet
RJK4034DJE
400V - 1.6A - MOS FET
High Speed Power Switching
Features
Low on-state resistance
R
DS(on)
= 3.7
typ. (at I
D
= 0.8 A, V
GS
= 10 V, Ta = 25C)
Low drive current
High speed switching
R07DS0864EJ0100
Rev.1.00
Aug 10, 2012
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
D
G
1. Source
2. Drain
3. Gate
32
S
1
Absolute Maximum Ratings
(Ta = 25C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel to ambient thermal Impedance
Channel temperature
Storage temperature
Notes: 1. Limited by Tch max.
2. Pulse width limited by safe operating area.
3. Value at Tc = 25C
Symbol
V
DSS
V
GSS
I
D Note1
I
D(pulse) Note2
I
DR Note1
I
DR(pulse)Note2
Pch
Note 3
ch-a
Tch
Tstg
Value
400
30
1.6
3.2
1.6
3.2
0.9
139
150
–55 to +150
Unit
V
V
A
A
A
A
W
C/W
C
C
R07DS0864EJ0100 Rev.1.00
Aug 10, 2012
Page 1 of 6
RJK4034DJE
Preliminary
Electrical Characteristics
(Ta = 25C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note:
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Min
400
—
—
3
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
3.7
117
18
2
11
11
18
54
4.9
1.0
2.8
0.87
193
Max
—
1
0.1
5
4.5
—
—
—
—
—
—
—
—
—
—
1.45
—
Unit
V
A
A
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 400 V, V
GS
= 0
V
GS
=
30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 0.8 A, V
GS
= 10 V
Note4
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 0.8 A
V
GS
= 10 V
R
L
= 300
Rg = 10
V
DD
= 360 V
V
GS
= 10 V
I
D
= 1.6 A
I
F
= 1.6 A, V
GS
= 0
Note4
I
F
= 1.6 A, V
GS
= 0
di
F
/dt = 100 A/s
4. Pulse test
5. Since this device is equipped with high voltage FET chip (V
DSS
400
V), high voltage may be supplied.
Therefore, please be sure to confirm about Electric discharge between Drain terminal and other terminal.
6. This device is sensitive to electrostatic discharge.
It is recommended to adopt appropriate cautions when handling this product.
R07DS0864EJ0100 Rev.1.00
Aug 10, 2012
Page 2 of 6
RJK4034DJE
Preliminary
Main Characteristics
Maximum Safe Operation Area
10
3.0
Typical Output Characteristics
Ta = 25°C
Pulse Test
8V
10 V
15 V
I
D
(A)
1
PW
μ
s
s
I
D
(A)
10
=
10
2.5
2.0
1.5
1.0
0.5
6.4 V
Drain Current
0.1
Operation in this
area is limited by
R
DS(on)
Drain Current
0
μ
6V
0.01
Tc = 25°C
1 shot
1
10
100
1000
5.6 V
V
GS
= 5 V
0.01
0
0
4
8
12
16
20
Drain to Source Voltage
V
DS
(V)
Drain to Source Voltage
V
DS
(V)
Typical Transfer Characteristics
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
R
DS(on)
(Ω)
10
V
DS
= 10 V
Pulse Test
100
V
GS
= 10 V
Ta = 25°C
Pulse Test
I
D
(A)
Drain Current
1
0.1
Ta = 75°C
25°C
10
0.01
−25°C
0.001
0
2
4
6
8
10
1
0.1
1
10
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
10
Body-Drain Diode Reverse
Recovery Time (Typical)
8
I
D
= 1.6 A
6
0.4 A
0.8 A
2
V
GS
= 10 V
Pulse Test
0
−25
0
25
50
75
100 125 150
Reverse Recovery Time trr (ns)
1000
100
4
di/dt = 100 A/μs
V
GS
= 0, Ta = 25°C
10
0.1
1
10
Case Temperature
Tc (°C)
Reverse Drain Current
I
DR
(A)
R07DS0864EJ0100 Rev.1.00
Aug 10, 2012
Page 3 of 6
RJK4034DJE
Typical Capacitance vs.
Drain to Source Voltage
V
DS
(V)
1000
V
GS
= 0
f = 1 MHz
Ta = 25°C
Ciss
100
Preliminary
Dynamic Input Characteristics (Typical)
I
D
= 1.6 A
Ta = 25°C
600
V
DD
= 320 V
200 V
100 V
Capacitance C (pF)
12
Drain to Source Voltage
400 V
DS
8
10
Coss
200
V
DD
= 320 V
200 V
100 V
0
1
2
3
4
5
4
Crss
1
0
40
80
120
160
200
0
0
6
Drain to Source Voltage
V
DS
(V)
Gate Charge
Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
3.2
6
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
I
DR
(A)
Gate to Source Cutoff Voltage
V
GS(off)
(V)
2.4
V
GS
= 0 V
Ta = 25°C
Pulse Test
5
4
3
2
1
V
DS
= 10 V
0
−25
0
25
I
D
= 10 mA
1 mA
0.1 mA
Reverse Drain Current
1.6
0.8
0
0
0.4
0.8
1.2
1.6
50
75
100 125 150
Source to Drain Voltage
V
SD
(V)
Case Temperature
Tc (°C)
R07DS0864EJ0100 Rev.1.00
Aug 10, 2012
Page 4 of 6
Gate to Source Voltage
V
GS
(V)
800
V
GS
16
RJK4034DJE
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
10
Tc = 25°C
Preliminary
1
D=1
0.5
0.2
0.1
0.1 0.05
0.02
θ
ch – c(t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 0.9°C/W, Tc = 25°C
P
DM
PW
T
10 m
100 m
1
10
100
1000
D=
PW
T
0.01
e
puls
shot
1
0.01
100
μ
1m
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 240 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0864EJ0100 Rev.1.00
Aug 10, 2012
Page 5 of 6
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