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HPA72R3

产品描述Power Bipolar Transistor, 7A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PML, 3 PIN
产品类别分立半导体    晶体管   
文件大小113KB,共4页
制造商SANYO
官网地址http://www.semic.sanyo.co.jp/english/index-e.html
下载文档 详细参数 选型对比 全文预览

HPA72R3概述

Power Bipolar Transistor, 7A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PML, 3 PIN

HPA72R3规格参数

参数名称属性值
厂商名称SANYO
零件包装代码TO-3PML
包装说明FLANGE MOUNT, R-PSFM-T3
针数3
Reach Compliance Codeunknown
其他特性HIGH RELIABILITY
外壳连接ISOLATED
最大集电极电流 (IC)7 A
集电极-发射极最大电压800 V
配置SINGLE WITH BUILT-IN DIODE
最小直流电流增益 (hFE)5
JESD-30 代码R-PSFM-T3
元件数量1
端子数量3
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
极性/信道类型NPN
最大功率耗散 (Abs)60 W
认证状态Not Qualified
表面贴装NO
端子形式THROUGH-HOLE
端子位置SINGLE
晶体管应用AMPLIFIER
晶体管元件材料SILICON

文档预览

下载PDF文档
Ordering number:ENN3271
NPN Triple Diffused Planar Silicon Composite Transistor
HPA72R
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
· High speed.
· High breakdown voltage.
· High-speed damper diode placed in one package.
· Adoption of MBIT process.
· High reliability.
· Micaless package facilitating easy mounting.
Package Dimensions
unit:mm
2039D
[HPA72R]
3.4
16.0
5.0
8.0
5.6
3.1
21.0
22.0
20.4
2.8
2.0
1.0
4.0
2.0
0.6
2.0
1
2
3
3.5
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Diode Forward Current
Diode Forward Current (Pulse)
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IO
IOP
PT
Tj
Tstg
PW≤100µs, duty≤50%
Tc=25°C
Ta=25°C
5.45
5.45
1 : Base
2 : Collector
3 : Emitter
SANYO : TO3PML
Conditions
Ratings
1500
800
6
7
16
4
7
60
3
150
–55 to +150
Unit
V
V
V
A
A
A
A
W
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
DC Current Gain
Symbol
VCB=1500V, IE=0
VCEO(sus) IC=100mA, IB=0
IEBO
VEB=4V, IC=0
hFE(1)
VCE=5V, IC=1A
hFE(2)
VCE=5V, IC=4A
ICBO
Conditions
Ratings
min
800
1.0
8
4*
10*
typ
max
5
Unit
mA
V
mA
* : The HPA72R is classified by 4A h
FE
as follows :
4
2
6
5
3
8
7
4
10
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82599TH (KT)/3230MO, TS No.3271–1/4

HPA72R3相似产品对比

HPA72R3 HPA72R2 HPA72R4
描述 Power Bipolar Transistor, 7A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PML, 3 PIN Power Bipolar Transistor, 7A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PML, 3 PIN Power Bipolar Transistor, 7A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PML, 3 PIN
厂商名称 SANYO SANYO SANYO
零件包装代码 TO-3PML TO-3PML TO-3PML
包装说明 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
针数 3 3 3
Reach Compliance Code unknown unknow unknow
其他特性 HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
外壳连接 ISOLATED ISOLATED ISOLATED
最大集电极电流 (IC) 7 A 7 A 7 A
集电极-发射极最大电压 800 V 800 V 800 V
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小直流电流增益 (hFE) 5 4 7
JESD-30 代码 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
元件数量 1 1 1
端子数量 3 3 3
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
极性/信道类型 NPN NPN NPN
最大功率耗散 (Abs) 60 W 60 W 60 W
认证状态 Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE
晶体管应用 AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON SILICON
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