Preliminary
Datasheet
RJK6015DPM
600V - 21A - MOS FET
High Speed Power Switching
Features
Low on-resistance
R
DS(on)
= 0.315
typ. (at I
D
= 10.5 A, V
GS
= 10 V, Ta = 25
C)
Low leakage current
High speed switching
R07DS0438EJ0200
(Previous: REJ03G1752-0100)
Rev.2.00
Jun 21, 2012
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
D
G
1. Gate
2. Drain
3. Source
S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
PW
10
s,
duty cycle
1%
Value at Tc = 25C
STch = 25C, Tch
150C
Limited by maximum safe operation area
Symbol
V
DSS
V
GSS
I
DNote4
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
I
AP
Note3
E
AR
Pch
Note2
ch-c
Tch
Tstg
Note3
Ratings
600
±30
21
63
21
63
6
1.9
60
2.08
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0438EJ0200 Rev.2.00
Jun 21, 2012
Page 1 of 6
RJK6015DPM
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Notes: 5. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Min
600
—
—
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
0.315
2600
240
28
40
45
107
40
67
13
29
0.89
430
Max
—
1
±0.1
4.5
0.360
—
—
—
—
—
—
—
—
—
—
1.50
—
Unit
V
A
A
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 600 V, V
GS
= 0
V
GS
=
30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 10.5 A, V
GS
= 10 V
Note5
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 10.5 A
V
GS
= 10 V
R
L
= 28.6
Rg = 10
V
DD
= 480 V
V
GS
= 10 V
I
D
= 21 A
I
F
= 21 A, V
GS
= 0
Note5
I
F
= 21 A, V
GS
= 0
di
F
/dt = 100 A/s
R07DS0438EJ0200 Rev.2.00
Jun 21, 2012
Page 2 of 6
RJK6015DPM
Preliminary
Main Characteristics
Maximum Safe Operation Area
1000
100
PW
Typical Output Characteristics
20
6V
8 V, 10 V
5.6 V
Ta = 25°C
Pulse Test
5.4 V
12
I
D
(A)
μ
s
10
1
0.1
0.01
0.001
0.1
Operation in this
area is limited by
R
DS(on)
Tc = 25°C
1 shot
=1
00
μ
s
Drain Current
Drain Current
I
D
(A)
10
16
5.2 V
8
5V
4
V
GS
= 4.8 V
10
100
1000
0
0
4
8
12
16
20
1
Drain to Source Voltage
V
DS
(V)
Drain to Source Voltage
V
DS
(V)
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
10
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
R
DS(on)
(Ω)
1
100
Drain Current
I
D
(A)
0.1
1
Tc = 75°C
25°C
−25°C
0.1
0
2
4
6
8
10
V
GS
= 10 V
Ta = 25°C
Pulse Test
0.01
1
10
100
1000
Gate to Source Voltage V
GS
(V)
Drain Current
I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
1.0
V
GS
= 10 V
Pulse Test
0.8
10.5 A
0.6
I
D
= 21 A
5A
1000
Body-Drain Diode Reverse
Recovery Time (Typical)
Reverse Recovery Time trr (ns)
100
0.4
10
di / dt = 100 A /
μs
V
GS
= 0, Ta = 25°C
1
1
10
100
1000
0.2
0
−25
0
25
50
75
100 125 150
Case Temperature
Tc (°C)
Reverse Drain Current
I
DR
(A)
R07DS0438EJ0200 Rev.2.00
Jun 21, 2012
Page 3 of 6
RJK6015DPM
Typical Capacitance vs.
Drain to Source Voltage
V
DS
(V)
100000
V
GS
= 0
f = 1 MHz
Ta = 25°C
Ciss
1000
Preliminary
Dynamic Input Characteristics (Typical)
V
GS
Capacitance C (pF)
10000
600
V
DS
400
Drain to Source Voltage
8
100
Coss
200
Crss
10
0
100
200
300
V
DD
= 480 V
300 V
100 V
20
40
60
80
4
0
0
0
100
Drain to Source Voltage
V
DS
(V)
Gate Charge
Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
20
5
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
V
DS
= 10 V
4
I
D
= 10 mA
1 mA
3
0.1 mA
I
DR
(A)
16
Reverse Drain Current
12
Gate to Source Cutoff Voltage
V
GS(off)
(V)
V
GS
= 0
Ta = 25°C
Pulse Test
8
4
2
1
0
-25
0
0
0.4
0.8
1.2
1.6
2.0
0
25
50
75
100 125 150
Source to Drain Voltage
V
SD
(V)
Case Temperature
Tc (°C)
R07DS0438EJ0200 Rev.2.00
Jun 21, 2012
Page 4 of 6
Gate to Source Voltage
V
DD
= 100 V
300 V
480 V
12
V
GS
(V)
800
I
D
= 21 A
Ta = 25°C
16
RJK6015DPM
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
Preliminary
1
D=1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
θ
ch – c (t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 2.08
°
C/W, Tc = 25
°
C
ls
pu
e
0.01
1
t
sho
P
DM
PW
T
D=
PW
T
0.001
10
μ
100
μ
1m
10 m
100 m
1
10
100
Pulse Width
PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 300 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0438EJ0200 Rev.2.00
Jun 21, 2012
Page 5 of 6
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