Preliminary
Datasheet
RJK6002DPE
600V - 2A - MOS FET
High Speed Power Switching
Features
Low on-resistance
R
DS(on)
= 5.7
typ. (at I
D
= 1 A, V
GS
= 10 V, Ta = 25C)
Low drive current
High density mounting
R07DS0214EJ0100
Rev.1.00
Jun 21, 2012
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
D
4
1. Gate
2. Drain
3. Source
4. Drain
1
G
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
3. STch = 25C, Tch
150C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
I
AP Note3
E
AR Note3
Pch
ch-c
Tch
Tstg
Note2
Ratings
600
30
2
4
2
4
1
0.05
35
3.57
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0214EJ0100 Rev.1.00
Jun 21, 2012
Page 1 of 6
RJK6002DPE
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Min
600
—
—
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
5.7
165
20
2.5
28
17
47
20
9.2
1.2
6.1
0.87
260
Max
—
1
±0.1
4.5
6.8
—
—
—
—
—
—
—
—
—
—
1.45
—
Unit
V
A
A
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 600 V, V
GS
= 0
V
GS
=
30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 1 A, V
GS
= 10 V
Note4
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 1 A
V
GS
= 10 V
R
L
= 300
Rg = 10
V
DD
= 480 V
V
GS
= 10 V
I
D
= 2 A
I
F
= 2 A, V
GS
= 0
Note4
I
F
= 2 A, V
GS
= 0
di
F
/dt = 100 A/s
R07DS0214EJ0100 Rev.1.00
Jun 21, 2012
Page 2 of 6
RJK6002DPE
Preliminary
Main Characteristics
Maximum Safe Operation Area
100
5
Typical Output Characteristics
Ta = 25°C
Pulse Test
Drain Current I
D
(A)
PW
10
μ
s
1
=
Drain Current I
D
(A)
10
4
10
0
3
8 V, 10 V
5.8 V
6V
μ
s
5.6 V
0.1
Operation in this
area is limited by
R
DS(on)
Tc = 25°C
1 shot
2
5.4 V
0.01
1
5.2 V
V
GS
= 5 V
0.001
0.1
1
10
100
1000
0
4
8
12
16
20
Drain to Source Voltage V
DS
(V)
Drain to Source Voltage V
DS
(V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
R
DS(on)
(Ω)
100
V
GS
= 10 V
Ta = 25°C
Pulse Test
Typical Transfer Characteristics
1
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
0.1
Tc = 75°C
0.01
25°C
10
0.001
−25°C
0.0001
0
2
4
6
8
10
1
0.1
1
10
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
V
GS
= 10 V
Pulse Test
12
I
D
= 2 A
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Body-Drain Diode Reverse
Recovery Time (Typical)
1000
8
0.5 A
1A
4
Reverse Recovery Time trr (ns)
16
100
di / dt = 100 A /
μs
V
GS
= 0, Ta = 25°C
10
0.1
1
10
0
-25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Reverse Drain Current I
DR
(A)
R07DS0214EJ0100 Rev.1.00
Jun 21, 2012
Page 3 of 6
RJK6002DPE
Typical Capacitance vs.
Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
1000
V
GS
= 0
f = 1 MHz
Ta = 25°C
100
Preliminary
Dynamic Input Characteristics (Typical)
I
D
= 2 A
Ta = 25
°C
V
DD
= 100 V
300 V
600
V
DS
400
480 V
8
12
V
GS
Ciss
10
Coss
200
Crss
1
0
100
200
300
V
DD
= 480 V
300 V
100 V
2
4
6
8
4
0
10
0
Drain to Source Voltage V
DS
(V)
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage V
GS(off)
(V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
5
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
5
V
DS
= 10 V
Reverse Drain Current I
DR
(A)
Ta = 25
°C
Pulse Test
4
4
I
D
= 10 mA
1 mA
0.1 mA
2
1
3
3
2
1
5, 10 V
V
GS
= 0,
−5
V
0
0.4
0.8
1.2
1.6
2.0
0
-25
0
25
50
75
100 125 150
Source to Drain Voltage V
SD
(V)
Case Temperature
Tc (°C)
R07DS0214EJ0100 Rev.1.00
Jun 21, 2012
Page 4 of 6
Gate to Source Voltage V
GS
(V)
800
16
Capacitance C (pF)
RJK6002DPE
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
3
Normalized Transient Thermal Impedance
γ
s (t)
1
D=1
0.5
0.3
0.2
0.1
0.05
2
0.0
0.1
0.01
1shot pulse
θch
– c(t) =
γs
(t) •
θch
– c
θch
– c = 3.57°C/W, Tc = 25°C
P
DM
PW
T
D=
PW
T
0.03
10
μ
100
μ
1m
10 m
Pulse Width
PW (s)
100 m
1
10
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 300 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(off)
tf
90%
td(on)
tr
R07DS0214EJ0100 Rev.1.00
Jun 21, 2012
Page 5 of 6
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