PSMN7R8-120ES
18 February 2013
I2P
AK
N-channel 120 V 7.9 mΩ standard level MOSFET in I2PAK
Product data sheet
1. General description
Standard level N-channel MOSFET in I2PAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic power supply equipment.
2. Features and benefits
•
•
•
•
High efficiency due to low switching and conduction losses
Improved dynamic avalanche performance
Suitable for standard level gate drive
I2PAK package for slimline adaptors & height constrained applications
3. Applications
•
•
•
•
AC-to-DC power supply
Synchronous rectification
Motor control
Slimline adaptors & chargers
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
T
mb
= 25 °C; V
GS
= 10 V;
Fig. 1
T
mb
= 25 °C;
Fig. 2
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 12
V
GS
= 10 V; I
D
= 25 A; V
DS
= 60 V;
Fig. 14; Fig. 15
-
-
50.5
167
-
-
nC
nC
Min
-
-
-
Typ
-
-
-
Max
120
70
349
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
4.7
6.72
7.9
mΩ
Dynamic characteristics
Q
GD
Q
G(tot)
E
DS(AL)S
gate-drain charge
total gate charge
Avalanche ruggedness
non-repetitive drain-
source avalanche
energy
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 70 A;
V
sup
≤ 120 V; unclamped; R
GS
= 50 Ω;
Fig. 3
-
-
386
mJ
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NXP Semiconductors
PSMN7R8-120ES
N-channel 120 V 7.9 mΩ standard level MOSFET in I2PAK
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
drain
G
mbb076
Simplified outline
mb
Graphic symbol
D
S
1 2 3
I2PAK (SOT226)
6. Ordering information
Table 3.
Ordering information
Package
Name
PSMN7R8-120ES
I2PAK
Description
plastic single-ended package (I2PAK); TO-262
Version
SOT226
Type number
7. Marking
Table 4.
Marking codes
Marking code
PSMN7R8-120ES
Type number
PSMN7R8-120ES
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
DGR
V
GS
I
D
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 1
V
GS
= 10 V; T
mb
= 100 °C;
Fig. 1
I
DM
P
tot
T
stg
PSMN7R8-120ES
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
T
j
≥ 25 °C; T
j
≤ 175 °C; R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
-55
Max
120
120
20
70
70
280
349
175
Unit
V
V
V
A
A
A
W
°C
peak drain current
total power dissipation
storage temperature
pulsed; t
p
≤ 10 µs; T
mb
= 25 °C;
Fig. 4
T
mb
= 25 °C;
Fig. 2
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
18 February 2013
2 / 13
NXP Semiconductors
PSMN7R8-120ES
N-channel 120 V 7.9 mΩ standard level MOSFET in I2PAK
Symbol
T
j
T
sld(M)
I
S
I
SM
E
DS(AL)S
Parameter
junction temperature
peak soldering temperature
Conditions
Min
-55
-
Max
175
260
Unit
°C
°C
Source-drain diode
source current
peak source current
T
mb
= 25 °C
pulsed; t
p
≤ 10 µs; T
mb
= 25 °C
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 70 A;
V
sup
≤ 120 V; unclamped; R
GS
= 50 Ω;
Fig. 3
80
003aak697
-
-
70
280
A
A
Avalanche ruggedness
non-repetitive drain-source
avalanche energy
-
386
mJ
I
D
(A)
120
P
der
(%)
80
03aa16
60
40
40
20
0
0
50
100
150
T
j
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig. 1.
Continuous drain current as a function of
mounting base temperature
Fig. 2.
Normalized total power dissipation as a
function of mounting base temperature
PSMN7R8-120ES
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
18 February 2013
3 / 13
NXP Semiconductors
PSMN7R8-120ES
N-channel 120 V 7.9 mΩ standard level MOSFET in I2PAK
10
2
003aak698
I
AL
(A)
(1)
10
(2)
1
10
-3
10
-2
10
-1
1
t
AL
(ms)
10
Fig. 3.
Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
I
D
(A)
10
3
Limit R
DSon
= V
DS
/ I
D
10
2
t
p
= 10 us
100 us
10
003aak696
DC
1
1 ms
10 ms
100 ms
10
-1
1
10
10
2
V
DS
(V)
10
3
Fig. 4.
Safe operating area; continuous and peak drain current as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
Conditions
Fig. 5
Min
-
Typ
0.35
Max
0.43
Unit
K/W
PSMN7R8-120ES
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
18 February 2013
4 / 13
NXP Semiconductors
PSMN7R8-120ES
N-channel 120 V 7.9 mΩ standard level MOSFET in I2PAK
Symbol
R
th(j-a)
Parameter
thermal resistance
from junction to
ambient
Conditions
vertical in free air
Min
-
Typ
65
Max
-
Unit
K/W
1
Z
th(j-mb)
(K/W)
0.1
δ = 0.5
0.2
0.1
0.05
0.02
10
-2
003aak695
P
δ=
t
p
T
single shot
10
-3
t
p
t
T
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
1
Fig. 5.
Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7.
Symbol
V
(BR)DSS
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
Conditions
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 µA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
Fig. 10; Fig. 11
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
Fig. 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
Fig. 10
I
DSS
drain leakage current
V
DS
= 120 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 120 V; V
GS
= 0 V; T
j
= 175 °C
I
GSS
gate leakage current
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 12
V
GS
= 10 V; I
D
= 25 A; T
j
= 175 °C;
Fig. 12; Fig. 13
PSMN7R8-120ES
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Min
120
108
2
1
-
-
-
-
-
4.7
-
Typ
-
-
3
-
-
0.1
-
10
10
6.72
19.4
Max
-
-
4
-
4.6
1
500
100
100
7.9
22.9
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
Static characteristics
V
GS(th)
Product data sheet
18 February 2013
5 / 13
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