Preliminary
Datasheet
RJM0407JSC
40 V - 20 A - N/P Channel Power MOS FET (6 in 1 Type)
R07DS0368EJ0100
High Speed Power Switching
Rev.1.00
Sep 20, 2012
Features
For Automotive applications
AEC-Q101 compliant
N/P Channel MOS FET (6 in 1 Type). High density mounting
Low on-resistance
Capable of 4.5 V gate drive
Outline
RENESAS Package Code: PRSP0020DF-A
(Package Name: HSOP-20)
MOS6
Pch
19
S
MOS5
Pch
14
S
MOS4
Pch
11
S
20
G
17
G
12
G
D 3,18,21
2
G
7
G
D 5,6,15,16,22
10
G
D 8,13,23
S
1
MOS1
Nch
S
4
MOS2
Nch
S
9
MOS3
Nch
R07DS0368EJ0100 Rev.1.00
Sep 20, 2012
Page 1 of 11
RJM0407JSC
Preliminary
Pin Arrangement
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
20
19
18
17
16
15
14
13
12
11
1
2
3
4
5
6
7
8
9
10
21
Common
Header
22
Common
Header
23
Common
Header
(Top
View)
No.
MOS6
Pch
19
S
(Bottom
View)
MOS5
Pch
14
S
MOS4
Pch
11
S
1
2
3, 18
4
5, 6, 15, 16
7
8, 13
9
10
11
12
14
17
19
20
21
22
23
MOS1
MOS1
MOS1, 6
MOS2
MOS2, 5
MOS2
MOS3,
4
MOS3
MOS3
MOS4
MOS4
MOS5
MOS5
MOS6
MOS6
MOS1, 6
MOS2, 5
MOS3,
4
Source
Gate
Drain
Source
Drain
Gate
Drain
Source
Gate
Source
Gate
Source
Gate
Source
Gate
Drain (Header)
Drain (Header)
Drain (Header)
20
G
17
G
12
G
D 3,18,21
2
G
7
G
D 5,6,15,16,22
10
G
D 8,13,23
S
1
MOS1
Nch
S
4
MOS2
Nch
S
9
MOS3
Nch
Absolute Maximum Ratings
(Ta = 25C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D
(pulse)
Note1
I
AP Note3
E
AR Note3
Pch
Note2
Tch
Note4
Tstg
Value
MOS1, 2, 3 (Nch)
MOS4, 5, 6 (Pch)
40
20
20
80
15
30
35
175
–55 to +150
–40
20
–20
–80
–15
30
35
175
–55 to +150
Unit
V
V
A
A
A
mJ
W
C
C
Notes: 1. PW
10s duty cycle
1%
2. Tc = 25C : 1 Drive Operation
3. Tch = 25C, Rg
50
4. AEC-Q101 compliant.
Thermal Impedance Characteristics
Channel to case thermal impedance
ch-c:
4.28C/W
R07DS0368EJ0100 Rev.1.00
Sep 20, 2012
Page 2 of 11
RJM0407JSC
Preliminary
Electrical Characteristics
MOS1, MOS2, MOS3 (N Channel)
(Ta = 25C)
Item
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Note:
5. Pulse test
Symbol
I
DSS
I
GSS
V
GS(off)
R
DS(on)
R
DS(on)
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
17
24
630
255
185
16
2
6
9
14
33
14
0.95
40
Max
10
10
2.5
21
34
—
—
—
—
—
—
—
—
—
—
1.25
—
Unit
A
A
V
m
m
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
V
DS
= 40 V, V
GS
= 0
V
GS
=
20
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 10 A
Note6
, V
GS
= 10 V
I
D
= 10 A
Note6
, V
GS
= 4.5 V
V
DS
= 10V, V
GS
= 0,
f = 1 MHz
V
DD
= 25 V, V
GS
= 10 V,
I
D
= 20 A
V
GS
= 10 V, I
D
= 10 A,
V
DD
30 V,R
L
= 3
,
R
G
= 4.7
I
F
= 20 A, V
GS
= 0
Note6
I
F
= 20 A, V
GS
= 0
di
F
/dt = 100 A/s
MOS4, MOS5, MOS6 (P Channel)
(Ta = 25C)
Item
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Note:
7. Pulse test
Symbol
I
DSS
I
GSS
V
GS(off)
R
DS(on)
R
DS(on)
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
—
—
–1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
34
48
920
360
260
22
3
8
19
32
32
14
–0.98
45
Max
–10
10
–2.5
42
68
—
—
—
—
—
—
—
—
—
—
–1.27
—
Unit
A
A
V
m
m
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
V
DS
= –40 V, V
GS
= 0
V
GS
=
20
V, V
DS
= 0
V
DS
= –10 V, I
D
= –1 mA
I
D
= –10 A
Note7
, V
GS
= –10 V
I
D
= –10 A
Note7
, V
GS
= –4.5 V
V
DS
= –10 V, V
GS
= 0,
f = 1 MHz
V
DD
= –25 V, V
GS
= –10 V,
I
D
= –20 A
V
GS
= –10 V, I
D
= –10 A,
V
DD
–30 V, R
L
= 3
,
R
G
= 4.7
I
F
= –20 A, V
GS
= 0
Note7
I
F
= –20 A, V
GS
= 0
di
F
/dt = 100 A/s
R07DS0368EJ0100 Rev.1.00
Sep 20, 2012
Page 3 of 11
RJM0407JSC
Preliminary
Main Characteristics
MOS1, 2, 3 (Nch)
Maximum Safe Operation Area
100
10
μ
s
10
0
Typical Output Characteristics
20
16
10
V
4.5
V
4.0
V
3.5
V
Tc = 25°C
Pulse Test
Drain Current I
D
(A)
1
Operation
PW = 10 ms
in
this
area
0.1
is limited R
DS(on)
Drain Current I
D
(A)
10
μ
s
1
m
s
12
3.0
V
8
0.01
0.001
0.1
Tc = 25°C
1 shot Pulse
DC Operation
4
V
GS
= 0
V
1
10
100
0
2
4
6
8
10
Drain
to
Source
Voltage
V
DS
(V)
Drain
to
Source
Voltage V
DS
(V)
Static Drain
to
Source On State Resistance vs.
Gate
to
Source
Voltage
50
I
D
= 10 A
Pulse Test
100
V
DS
= 10
V
Pulse Test
Drain Current I
D
(A)
10
Static Drain
to
Source On State Resistance
R
DS(on)
(mΩ)
Typical Transfer Characteristics
40
Tc = 175°C
30
1
Tc = 175°C
0.1
25°C
−40°C
1
2
3
4
20
25°C
−40°C
0.01
0.001
0
10
0
4
8
12
16
20
Gate
to
Source
Voltage V
GS
(V)
Static Drain
to
Source State On Resistance
vs. Drain Current
1000
Tc = 25°C
Pulse Test
Gate
to
Source
Voltage V
GS
(V)
Static Drain
to
Source on State Resistance
vs. Temperature
50
I
D
= 10 A
Pulse Test
40
V
SG
= 4.5
V
Static Drain
to
Source On State Resistance
R
DS(on)
(mΩ)
100
V
GS
= 4.5
V
Static Drain
to
Source On State Resistance
R
DS(on)
(mΩ)
30
20
10
10
V
10
V
10
0
−50
1
1
10
100
0
50
100
150
200
Drain Current I
D
(A)
Case Temperature Tc (°C)
R07DS0368EJ0100 Rev.1.00
Sep 20, 2012
Page 4 of 11
RJM0407JSC
MOS1, 2, 3(Nch)
Typical Capacitance vs.
Drain
to
Source
Voltage
Drain
to
Source
Voltage V
DS
(V)
10000
50
Preliminary
Dynamic Input Characteristics
Gate
to
Source
Voltage V
GS
(V)
Tc = 25°C
I
D
= 20 A
20
Capacitance C (pF)
40
V
DD
= 25
V
15
V
10
V
V
GS
16
12
1000
Ciss
30
V
DS
Coss
100
Tc = 25°C
V
GS
= 0
f = 1 MHz
10
0
10
20
30
Crss
20
8
10
V
DD
= 25
V
15
V
10
V
4
8
12
16
4
0
20
0
Drain
to
Source
Voltage V
DS
(V)
Gate Charge Qg (nc)
Reverse Drain Current vs.
Source
to
Drain
Voltage
Repetitive Avalanche Energy E
AR
(mJ)
20
Avalanche Energy vs.
Channel Temperature Derating
50
40
30
20
10
0
25
I
AP
= 15 A
V
DD
= 25
V
duty < 0.1 %
Rg
≥
50
Ω
Reverse Drain Current I
DR
(A)
Tc = 25°C
Pulse Test
15
10
10
V
5
V
GS
= 0
V,
−5
V
0
0.4
0.8
1.2
1.6
2.0
50
75
100 125 150 175
Source
to
Drain
Voltage V
SD
(V)
Channel Temperature Tch (°C)
Avalanche Test Circuit
V
DS
Monitor
L
I
AP
Monitor
E
AR
=
Avalanche Waveform
1
2
L
•
IAP2
•
V
DSS
V
DSS
–
V
DD
V
(BR)DSS
Rg
D. U. T
V
DD
I
AP
V
DS
Vin
15
V
50
Ω
I
D
0
V
DD
R07DS0368EJ0100 Rev.1.00
Sep 20, 2012
Page 5 of 11
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