Preliminary
Datasheet
RJL60S5DPP-E0
600V - 20A - SJ MOS FET
High Speed Power Switching
Features
Superjunction MOSFET
Built-in fast recovery diode
t
rr
= 170 ns typ. (at I
F
= 20 A, V
GS
= 0, di
F
/dt = 100 A/s, Ta = 25C)
Low on-resistance
R
DS(on)
= 0.15
typ. (at I
D
= 10 A, V
GS
= 10 V, Ta = 25C)
R07DS0819EJ0100
Rev.1.00
Feb 04, 2013
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
D
G
1. Gate
2. Drain
3. Source
1
2 3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Tc = 25C
Tc = 100C
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Limited by Tch max.
2. STch = 25C, Tch
150C
3. Value at Tc = 25C
Symbol
V
DSS
V
GSS
I
DNote1
I
DNote1
I
D (pulse)Note1
I
DR Note1
I
DR (pulse) Note1
I
AP
Note2
E
AR
Pch
Note3
ch-c
Tch
Tstg
Note2
Ratings
600
+30,
20
20
12.6
40
20
40
4
0.87
33.7
3.7
150
–55 to +150
Unit
V
V
A
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0819EJ0100 Rev.1.00
Feb 04, 2013
Page 1 of 7
RJL60S5DPP-E0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Gate resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Body-drain diode reverse recovery
current
Body-drain diode reverse recovery
charge
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
R
DS(on
Rg
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
I
rr
Q
rr
Min
600
—
—
3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
0.150
0.375
4.5
1700
2200
18
22
31
101
27
46
11
23
1.0
170
13
1.2
Max
—
1
±0.1
5
0.178
—
—
—
—
—
—
—
—
—
—
—
—
1.6
—
—
—
Unit
V
mA
A
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
A
C
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 600 V, V
GS
= 0
V
GS
= +30V,
20
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 10 A, V
GS
= 10 V
Note4
Ta = 150°C
Note4
I
D
= 10 A, V
GS
= 10 V
f = 1 MHz
V
DS
= 25 V, V
GS
= 0
V
DS
= 25 V
V
GS
= 0
f = 100kHz
I
D
= 10 A
V
GS
= 10 V
R
L
= 30
Note4
Rg = 10
V
DD
= 480 V
V
GS
= 10 V
Note4
I
D
= 20 A
I
F
= 20 A, V
GS
= 0
Note4
I
F
= 20 A
V
GS
= 0
Note4
di
F
/dt = 100 A/s
R07DS0819EJ0100 Rev.1.00
Feb 04, 2013
Page 2 of 7
RJL60S5DPP-E0
Preliminary
Main Characteristics
Channel
Dissipation
vs.
Case Temperature
50
100
Maximum
Safe Operation Area
Channel
Dissipation Pch (W)
10
I
D
(A)
40
μ
s
10
Operation
in
this area
is limited by
R
DS(on)
1
P
W
30
=
1
Drain
Current
00
μ
s
20
10
0
0
25
50
75
100 125 150 175
0.1
1
Tc =
25°C
1
shot
10
100
1000
Case Temperature Tc
(°C)
Drain to Source
Voltage
V
DS
(V)
Typical
Output
Characteristics
40
Ta =
25°C
Pulse
Test
Typical
Output
Characteristics
40
Ta =
125°C
Pulse
Test
7V
10
V
6.6 V
I
D
(A)
I
D
(A)
30
15
V
6.2 V
30
7V
10
V
15
V
20
6.2 V
6.6 V
5.8 V
5.4 V
Drain
Current
20
5.8 V
10
5.4 V
V
GS
= 5 V
Drain
Current
10
V
GS
= 5 V
0
0
2
4
6
8
10
0
0
2
4
6
8
10
Drain to Source
Voltage
V
DS
(V)
Drain to Source
Voltage
V
DS
(V)
Typical Transfer Characteristics
Drain to Source on State Resistance
R
DS(on)
(Ω)
100
V
DS
=
10
V
Pulse
Test
Static Drain to Source on State Resistance
vs.
Drain
Current
(Typical)
1
Ta =
125°C
Drain
Current I
D
(A)
10
25°C
1
Ta = 75°C
25°C
0.1
0.1
−25°C
V
GS
=
10
V
Pulse
Test
0.01
1
10
100
0.01
0
2
4
6
8
10
Gate to Source
Voltage V
GS
(V)
Drain
Current
I
D
(A)
R07DS0819EJ0100 Rev.1.00
Feb 04, 2013
Page 3 of 7
RJL60S5DPP-E0
Static Drain to Source on
State Resistance
vs. Temperature
(Typical)
0.5
V
GS
=
10
V
Pulse
Test
0.4
Preliminary
Body-Drain
Diode Reverse
Recovery
Time
(Typical)
Reverse Recovery
Time
trr (ns)
1000
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
0.3
I
D
=
20 A
100
0.2
10 A
5
A
0.1
di/dt
=
100 A/μs
V
GS
=
0,
Ta =
25°C
10
1
10
100
0
−25
0
25
50
75
100 125 150
Case Temperature
Tc
(°C)
Reverse Drain
Current I
DR
(A)
Typical Capacitance vs.
Drain to Source
Voltage
100000
10000
V
GS
=
0
f =
100 kHz
Ta =
25°C
Ciss
4
C
OSS
Stored
Energy
(Typical)
Capacitance C
(pF)
3
100
10
Coss
E
OSS
(μJ)
1000
2
Crss
1
0.1
0
50
100
150
200
250
300
1
0
0
50
100
150
200
250
300
Drain to Source
Voltage
V
DS
(V)
Drain to Source
Voltage
V
DS
(V)
Dynamic
Input Characteristics
(Typical)
V
DS
(V)
I
DR
(A)
V
GS
V
DD
= 480 V
300
V
V
DS
400
8
Reverse Drain
Current vs.
Source to Drain
Voltage
(Typical)
V
GS
(V)
100
800
16
600
12
Drain to Source
Voltage
Gate to Source
Voltage
Reverse Drain
Current
10
Ta =
125°C
25°C
1
V
GS
=
0
Pulse
Test
0.1
0
0.4
0.8
1.2
1.6
200
V
DD
= 480 V
300
V
0
0
20
40
I
D
=
20 A
Ta =
25°C
60
80
4
0
Gate
Charge
Qg
(nC)
Source to Drain
Voltage
V
SD
(V)
R07DS0819EJ0100 Rev.1.00
Feb 04, 2013
Page 4 of 7
RJL60S5DPP-E0
Gate to Source
Cutoff Voltage
vs. Case Temperature
(Typical)
Drain to Source
Breakdown Voltage
V
(BR)DSS
(V)
Gate to Source
Cutoff Voltage
V
GS(off)
(V)
6
5
I
D
=
10 mA
4
3
1 mA
2
1
V
DS
=
10
V
0
−25
0
25
50
75
100 125 150
0.1 mA
800
Preliminary
Drain to Source
Breakdown Voltage
vs. Case Temperature
(Typical)
700
600
500
I
D
=
10 mA
V
GS
=
0
400
−25
0
25
50
75
100 125 150
Case Temperature
Tc
(°C)
Case Temperature
Tc
(°C)
Maximum
Avalanche
Energy vs.
Channel Temperature
Derating
Repetitive Avalanche
Energy E
AR
(mJ)
1.6
V
DD
= 50 V
Rg
≥
100
Ω
1.2
0.8
0.4
0
25
50
75
100
125
150
Channel Temperature
Tch
(°C)
Normalized Transient Thermal Impedance vs.
Pulse
Width
Normalized Transient Thermal Impedance
γ
s
(t)
10
1
D
=
1
0.5
0.2
0.1
0.01
0.05
0.02
θ
ch
–
c(t)
=
γ
s
(t)
•
θ
ch
–
c
θ
ch
–
c
=
3.7°C/W
u
ls
ot
p
e
0.01
0
.
01
P
DM
PW
T
D
=
h
1
s
PW
T
0.001
10
μ
100
μ
1m
10 m
100 m
1
10
100
Pulse
Width
PW (s)
R07DS0819EJ0100 Rev.1.00
Feb 04, 2013
Page 5 of 7
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
