Preliminary
Datasheet
RJL6018DPK
600V - 27A - MOS FET
High Speed Power Switching
Features
Built-in fast recovery diode
Low on-resistance
R
DS(on)
= 0.22
typ. (at I
D
= 13.5 A, V
GS
= 10 V, Ta = 25C)
Low leakage current
High speed switching
R07DS0816EJ0200
(Previous: REJ03G1819-0100)
Rev.2.00
Jun 21, 2012
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name:TO-3P)
D
G
1. Gate
2. Drain (Flange)
3. Source
1
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
3. STch = 25C, Tch
150C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
I
APNote3
E
AR
Pch
Note2
ch-c
Tch
Tstg
Note3
Ratings
600
±30
27
81
27
81
6
1.9
200
0.625
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0816EJ0200 Rev.2.00
Jun 21, 2012
Page 1 of 6
RJL6018DPK
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Min
600
—
—
1.5
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
0.220
3830
369
43
42
53
157
87
98
17.5
41.6
1.00
180
Max
—
10
0.1
4.0
0.265
—
—
—
—
—
—
—
—
—
—
1.65
—
Unit
V
A
A
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 600 V, V
GS
= 0
V
GS
=
30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 13.5 A, V
GS
= 10 V
Note4
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 13.5 A
V
GS
= 10 V
R
L
= 22.2
Rg = 10
V
DD
= 480 V
V
GS
= 10 V
I
D
= 27 A
I
F
= 27 A, V
GS
= 0
Note4
I
F
= 27 A, V
GS
= 0
di
F
/dt = 100 A/s
R07DS0816EJ0200 Rev.2.00
Jun 21, 2012
Page 2 of 6
RJL6018DPK
Preliminary
Main Characteristics
Maximum Safe Operation Area
1000
50
4.2
Typical Output Characteristics
V
Ta = 25°C
Pulse Test
5.2 V
5.4 V
5.6 V
6V
5V
4.8 V
4.6 V
4.4 V
10
I
D
(A)
I
D
(A)
100
10
μ
s
40
PW
10
30
10 V
Drain Current
Drain Current
μ
00
=1
1
0.1
Operation in this
area is limited by
R
DS(on)
Tc = 25°C
1 shot
1
10
100
20
s
V
GS
= 4.2 V
0.01
0.1
1000
0
0
4
8
12
16
20
Drain to Source Voltage
V
DS
(V)
Drain to Source Voltage
V
DS
(V)
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
R
DS(on)
(Ω)
100
1
V
GS
= 10 V
Ta = 25°C
Pulse Test
0.5
I
D
(A)
Drain Current
10
1
Tc = 75°C
25°C
−25°C
0.1
0.2
0.01
0.1
1
10
100
0
2
4
6
8
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
0.8
Body-Drain Diode Reverse
Recovery Time (Typical)
0.6
I
D
= 27 A
0.4
Reverse Recovery Time trr (ns)
V
GS
= 10 V
Pulse Test
1000
100
0.2
3A
13.5 A
di / dt = 100 A /
μs
V
GS
= 0, Ta = 25°C
10
1
10
100
0
-25
0
25
50
75
100 125 150
Case Temperature
Tc (°C)
Reverse Drain Current
I
DR
(A)
R07DS0816EJ0200 Rev.2.00
Jun 21, 2012
Page 3 of 6
RJL6018DPK
Typical Capacitance vs.
Drain to Source Voltage
V
DS
(V)
10000
V
GS
= 0, f = 1 MHz
Ciss
Preliminary
Dynamic Input Characteristics (Typical)
V
GS
(V)
Gate to Source Voltage
800
V
GS
V
DS
= 480 V
300 V
100 V
16
Capacitance C (pF)
600
V
DS
400
12
Drain to Source Voltage
1000
8
Coss
100
200
Crss
10
0
Ta = 25°C
50
100
150
200
250
300
V
DS
= 480 V
300 V
100 V
0
20
40
60
4
I
D
= 19 A
Ta = 25°C
80
0
100
0
Drain to Source Voltage
V
DS
(V)
Gate Charge
Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
50
5
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
V
DS
= 10 V
I
DR
(A)
Gate to Source Cutoff Voltage
V
GS(off)
(V)
40
V
GS
= 0 V
Ta = 25°C
Pulse Test
4
I
D
= 10 mA
3
Reverse Drain Current
30
20
10
2
1 mA
1
0.1 mA
0
0
0.4
0.8
1.2
1.6
2.0
0
-25
0
25
50
75
100 125 150
Source to Drain Voltage
V
SD
(V)
Case Temperature
Tc (°C)
R07DS0816EJ0200 Rev.2.00
Jun 21, 2012
Page 4 of 6
RJL6018DPK
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
Preliminary
0.1
0.1
θ
ch – c(t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 0.625°C/W, Tc = 25°C
P
DM
uls
tp
e
0.05
0.03
0.02
1
0.0
D=
PW
T
PW
T
0.01
10
μ
ho
1s
100
μ
1m
10 m
100 m
1
10
Pulse Width
PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 300 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0816EJ0200 Rev.2.00
Jun 21, 2012
Page 5 of 6
stm32/stm8
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