Preliminary
Datasheet
RJL6012DPE
600V - 10A - MOS FET
High Speed Power Switching
Features
Built-in fast recovery diode
Low on-resistance
R
DS(on)
= 0.88
typ. (at I
D
= 5 A, V
GS
= 10 V, Ta = 25C)
Low leakage current
High speed switching
R07DS0814EJ0200
(Previous: REJ03G1750-0100)
Rev.2.00
Jun 21, 2012
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
D
4
1. Gate
2. Drain
3. Source
4. Drain
1
G
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
3. STch = 25C, Tch
150C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
I
APNote3
E
ARNote3
Note2
Pch
ch-c
Tch
Tstg
Ratings
600
30
10
30
10
30
3
0.49
100
1.25
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0814EJ0200 Rev.2.00
Jun 21, 2012
Page 1 of 6
RJL6012DPE
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to Source breakdown voltage
Zero Gate voltage drain current
Gate to Source leak current
Gate to Source cutoff voltage
Static Drain to Source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
trr
Min
600
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
0.88
1050
105
12
27
20
78
16
28
4.8
14.2
1.0
150
Max
—
10
0.1
4.0
1.10
—
—
—
—
—
—
—
—
—
—
1.7
—
Unit
V
A
A
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 600 V, V
GS
= 0
V
GS
=
30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 5 A, V
GS
= 10 V
Note4
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 5 A
V
GS
= 10 V
R
L
= 60
Rg = 10
V
DD
= 480 V
V
GS
= 10 V
I
D
= 10 A
I
F
= 10 A, V
GS
= 0
Note4
I
F
= 10 A, V
GS
= 0
di
F
/dt = 100 A/s
R07DS0814EJ0200 Rev.2.00
Jun 21, 2012
Page 2 of 6
RJL6012DPE
Preliminary
Main Characteristics
Maximum Safe Operation Area
100
10
μ
s
Typical Output Characteristics
20
Ta = 25°C
Pulse Test
5.2 V
Drain Current I
D
(A)
Drain Current I
D
(A)
10
PW
=1
00
16
10 V
12
6V
5V
1
μ
s
0.1
Operation in this
area is limited by
R
DS(on)
Ta = 25°C
1 shot
8
4.8 V
4.6 V
0.01
4
V
GS
= 4.4 V
0.001
0.1
1
10
100
1000
0
0
4
8
12
16
20
Drain to Source Voltage V
DS
(V)
Drain to Source Voltage V
DS
(V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
R
DS(on)
(Ω)
10
Pulse Test
V
GS
= 10 V
Ta = 25°C
Typical Transfer Characteristics
100
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
10
Tc = 75°C
1
25°C
1
0.1
−25°C
0.01
0
2
4
6
8
0.1
1
10
100
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
Reverse Recovery Time trr (ns)
2.5
1000
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Body-Drain Diode Reverse
Recovery Time (Typical)
2.0
I
D
= 10 A
1.5
5A
1.0
3A
100
0.5
di / dt = 100 A /
μs
V
GS
= 0, Ta = 25°C
10
1
10
100
0
-25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Reverse Drain Current I
DR
(A)
R07DS0814EJ0200 Rev.2.00
Jun 21, 2012
Page 3 of 6
RJL6012DPE
Typical Capacitance vs.
Drain to Source Voltage (Typical)
Drain to Source Voltage V
DS
(V)
10000
Preliminary
Dynamic Input Characteristics (Typical)
I
D
= 10 A
Ta = 25
°C
V
DD
= 100 V
600
V
DS
400
300 V
480 V
8
12
Capacitance C (pF)
1000
Ciss
100
Coss
10
V
GS
= 0
f = 1 MHz
Ta = 25°C
100
200
Crss
200
V
DD
= 480 V
300 V
100 V
8
16
24
32
4
1
0
0
40
300
0
Drain to Source Voltage V
DS
(V)
Gate Charge Qg (nC)
20
Gate to Source Cutoff Voltage V
GS(off)
(V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Reverse Drain Current I
DR
(A)
V
GS
= 0
Ta = 25
°C
Pulse Test
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
5
V
DS
= 10 V
16
4
12
3
I
D
= 10 mA
1 mA
1
0.1 mA
8
4
2
0
0.4
0.8
1.2
1.6
2.0
0
-25
0
25
50
75
100 125 150
Source to Drain Voltage V
SD
(V)
Case Temperature
Tc (°C)
R07DS0814EJ0200 Rev.2.00
Jun 21, 2012
Page 4 of 6
Gate to Source Voltage V
GS
(V)
800
V
GS
16
RJL6012DPE
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
3
γ
s (t)
Preliminary
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
θch
–
c(t) =
γ
s (t)
• θch
–
c
θch
–
c = 1.25°C/ W, Tc = 25°C
PDM
PW
T
0.03
0.02
1
lse
0.0
pu
t
ho
1s
D=
PW
T
0.01
10
μ
100
μ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 300 V
Vout
Monitor
Vin
Vout
10%
10%
Waveform
90%
10%
90%
td(on)
90%
td(off)
tf
tr
R07DS0814EJ0200 Rev.2.00
Jun 21, 2012
Page 5 of 6
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