BC846ALT1G Series,
SBC846ALT1G Series
General Purpose
Transistors
NPN Silicon
Features
•
Moisture Sensitivity Level: 1
•
ESD Rating
−
Human Body Model: >4000 V
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
ESD Rating
−
Machine Model: >400 V
•
AEC−Q101 Qualified and PPAP Capable
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
BC846, SBC846
BC847, BC850, SBC847
BC848, BC849, SBC848
Collector−Base Voltage
BC846, SBC846
BC847, BC850, SBC847
BC848, BC849, SBC848
Emitter−Base Voltage
BC846, SBC846
BC847, BC850, SBC847
BC848, BC849, SBC848
Collector Current
−
Continuous
Symbol
V
CEO
Value
65
45
30
Vdc
80
50
30
Vdc
6.0
6.0
5.0
100
mAdc
Unit
Vdc
3
1
2
V
CBO
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
V
EBO
XX M
G
G
1
XX
M
G
= Device Code
= Date Code*
= Pb−Free Package
I
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Device Dissipation
Alumina Substrate (Note 2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
Symbol
P
D
Max
225
Unit
mW
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1.8
R
qJA
P
D
556
300
mW/°C
°C/W
mW
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
2.4
R
qJA
T
J
, T
stg
417
−55
to
+150
mW/°C
°C/W
°C
1. FR−5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in 99.5% alumina.
©
Semiconductor Components Industries, LLC, 2011
November, 2011
−
Rev. 11
1
Publication Order Number:
BC846ALT1/D
BC846ALT1G Series, SBC846ALT1G Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage BC846A, B, SBC846A, B
BC847A, B, C, BC850B, C, SBC847C
(I
C
= 10 mA)
BC848A, B, C, BC849B, C, SBC848B
Collector
−Emitter
Breakdown Voltage BC846A, B
(I
C
= 10
mA,
V
EB
= 0)
BC847A, B, C BC850B, C, SBC847C
BC848A, B, C, BC849B, C, SBC848B
Collector
−Base
Breakdown Voltage
(I
C
= 10
mA)
Emitter
−Base
Breakdown Voltage
(I
E
= 1.0
mA)
Collector Cutoff Current (V
CB
= 30 V)
ON CHARACTERISTICS
DC Current Gain
BC846A, BC847A, BC848A, SBC846A
(I
C
= 10
mA,
V
CE
= 5.0 V) BC846B, BC847B, BC848B, SBC846B, SBC848B
BC847C, BC848C, SBC847C
(I
C
= 2.0 mA, V
CE
= 5.0 V) BC846A, BC847A, BC848A, SBC846A, SBC846A
BC846B, BC847B, BC848B,
BC849B, BC850B, SBC846B, SBC848B
BC847C, BC848C, BC849C, BC850C, SBC847C
Collector
−Emitter
Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
Collector
−Emitter
Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
Base
−Emitter
Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
Base
−Emitter
Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
Base
−Emitter
Voltage (I
C
= 2.0 mA, V
CE
= 5.0 V)
Base
−Emitter
Voltage
(I
C
= 10 mA, V
CE
= 5.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current
−Gain −
Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 Vdc, f = 100 MHz)
Output Capacitance (V
CB
= 10 V, f = 1.0 MHz)
Noise Figure (I
C
= 0.2 mA,
V
CE
= 5.0 Vdc, R
S
= 2.0 kW,
f = 1.0 kHz, BW = 200 Hz)
BC846A,B, BC847A,B,C, BC848A,B,C,
SBC846A, B, SBC847C, SBC848B
BC849B,C, BC850B,C
f
T
C
obo
NF
−
−
−
−
10
4.0
100
−
−
−
−
4.5
MHz
pF
dB
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
−
−
−
110
200
420
−
−
−
−
580
−
90
150
270
180
290
520
−
−
0.7
0.9
660
−
−
−
−
220
450
800
0.25
0.6
−
−
700
770
V
V
mV
−
BC846A, B, SBC846A, B
BC847A, B, C, BC850B, C, SBC847C
BC848A, B, C, BC849B, C, SBC848B
BC846A, B, SBC846A, B
BC847A, B, C, BC850B, C, SBC847C
BC848A, B, C, BC849B, C, SBC848B
(V
CB
= 30 V, T
A
= 150°C)
V
(BR)CEO
65
45
30
80
50
30
80
50
30
6.0
6.0
5.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
15
5.0
V
Symbol
Min
Typ
Max
Unit
V
(BR)CES
V
V
(BR)CBO
V
V
(BR)EBO
V
I
CBO
nA
mA
http://onsemi.com
2
BC846ALT1G Series, SBC846ALT1G Series
BC846A, BC847A, BC848A, SBC846A
300
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
150°C
h
FE
, DC CURRENT GAIN
V
CE
= 1 V
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0.0001
0.001
0.01
0.1
−55°C
25°C
I
C
/I
B
= 20
150°C
200
25°C
100
−55°C
0
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector
Current
−55°C
25°C
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1.0
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
150°C
I
C
/I
B
= 20
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
V
CE
= 5 V
−55°C
25°C
150°C
0.0001
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
http://onsemi.com
3
BC846ALT1G Series, SBC846ALT1G Series
BC846A, BC847A, BC848A, SBC846A
2.0
VCE , COLLECTOR-EMITTER VOLTAGE (V)
T
A
= 25°C
1.6
I
C
= 200 mA
1.2
I
C
=
I
C
=
10 mA 20 mA
0.8
I
C
= 50 mA
I
C
= 100 mA
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
1.0
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0.4
0
0.02
0.1
1.0
I
B
, BASE CURRENT (mA)
10
20
0.2
10
1.0
I
C
, COLLECTOR CURRENT (mA)
100
Figure 5. Collector Saturation Region
10
7.0
C, CAPACITANCE (pF)
5.0
C
ib
T
A
= 25°C
f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
400
300
200
Figure 6. Base−Emitter Temperature Coefficient
3.0
C
ob
2.0
100
80
60
40
30
20
0.5 0.7
V
CE
= 10 V
T
A
= 25°C
1.0
0.4 0.6 0.8 1.0
2.0
20
4.0 6.0 8.0 10
V
R
, REVERSE VOLTAGE (VOLTS)
40
1.0
2.0 3.0
5.0 7.0 10
20
I
C
, COLLECTOR CURRENT (mAdc)
30
50
Figure 7. Capacitances
Figure 8. Current−Gain
−
Bandwidth Product
http://onsemi.com
4
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
