IXYS
Absolute Maximum Ratings
V
RRM
V
DRM
[V]
MCC
1200
1400
1600
1800
500-12io1
500-14io1
500-16io1
500-18io1
Date: 17.03.2005
Data Sheet Issue: 2
Thyristor/Diode Modules M## 500
MCD
500-12io1
500-14io1
500-16io1
500-18io1
MDC
500-12io1
500-14io1
500-16io1
500-18io1
MCA
500-12io1
500-14io1
500-16io1
500-18io1
MCK
500-12io1
500-14io1
500-16io1
500-18io1
MCDA
500-12io1
500-14io1
500-16io1
500-18io1
MDCA
500-12io1
500-14io1
500-16io1
500-18io1
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
Repetitive peak off-state voltage
Repetitive peak reverse voltage
1)
1)
MAXIMUM
LIMITS
1200-1800
1200-1800
1200-1800
1)
UNITS
V
V
V
V
Non-repetitive peak off-state voltage
1)
Non-repetitive peak reverse voltage
1300-1900
OTHER RATINGS
I
T(AV)M
I
T(AV)M
I
T(AV)M
I
T(RMS)M
I
T(d.c.)
I
TSM
I
TSM2
It
It
(di/dt)
cr
V
RGM
P
G(AV)
P
GM
V
ISOL
T
Vj op
T
stg
2
2
MAXIMUM
LIMITS
2)
2)
2)
UNITS
A
A
A
A
A
kA
kA
Maximum average on-state current, T
C
= 89°C
Maximum average on-state current. T
C
= 85°C
Nominal RMS on-state current, T
C
= 55°C
D.C. on-state current, T
C
= 55°C
2)
500
545
376
1294
1029
3)
Maximum average on-state current. T
C
= 100°C
Peak non-repetitive surge t
p
= 10 ms, V
RM
= 60%V
RRM
Peak non-repetitive surge t
p
= 10 ms, V
RM
≤
10V
2
2
3)
3)
16.5
18.2
1.36×10
1.66×10
150
6
6
I t capacity for fusing t
p
= 10 ms, V
RM
= 60%V
RRM
I t capacity for fusing t
p
= 10 ms, V
RM
≤
10 V
3)
As
As
A/µs
A/µs
V
W
W
V
°C
°C
2
2
Critical rate of rise of on-state current (repetitive)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Isolation Voltage
5)
4)
4)
Critical rate of rise of on-state current (non-repetitive)
300
5
4
30
3500
-40 to +125
-40 to +150
Operating temperature range
Storage temperature range
Notes:
1) De-rating factor of 0.13% per °C is applicable for Tv
j
below 25°C.
2) Single phase; 50 Hz, 180° half-sinewave.
3) Half-sinewave, 125°C T
vj
initial.
4) V
D
= 67% V
DRM
, I
FG
= 2 A, t
r
≤
0.5µs, T
C
= 125°C.
5) AC RMS voltage, 50 Hz, 1min test
Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2
Page 1 of 11
March, 2005
IXYS
Thyristor Characteristics
PARAMETER
V
TM
V
TM
V
T0
r
T
I
DRM
I
RRM
V
GT
I
GT
I
H
t
gd
t
gt
Q
rr
Q
ra
I
rm
t
rr
t
q
Maximum peak on-state voltage
Maximum peak on-state voltage
Threshold voltage
Slope resistance
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Holding current
Gate controlled turn-on delay time
Turn-on time
Recovered Charge
Recovered Charge, 50% chord
Reverse recovery current
Reverse recovery time, 50% chord
Turn-off time
-
R
thJC
R
thCH
F
1
F
2
W
t
Thermal resistance, junction to case
-
-
-
-
4.25
10.2
-
300
-
-
-
-
-
-
1.5
Thyristor/Diode Module Types M##500-12io1 and M##500-18io1
MIN. TYP. MAX. TEST CONDITIONS
1)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.6
1.2
2200
1600
120
25
200
1.5
0.85
0.27
-
70
70
3.0
300
V
D
= 80% V
DRM
, linear ramp, Gate o/c
Rated V
DRM
Rated V
RRM
T
vj
= 25°C, V
D
= 10 V, I
T
= 3 A
I
TM
= 1700 A
UNITS
V
V
V
mΩ
V/µs
mA
mA
V
mA
mA
µs
µC
µC
A
µs
1.43 I
TM
= 1500 A
(dv/dt)
cr
Critical rate of rise of off-state voltage 1000
1000 T
vj
= 25°C
1.5
2.5
-
1900 I
TM
= 1000 A, t
p
= 1 ms, di/dt = 10A/µs,
V
R
= 50 V
-
-
-
-
I
TM
= 1000 A, t
p
= 1 ms, di/dt = 10 A/µs,
V
R
= 50 V, V
DR
= 80%V
DRM
, dv
DR
/dt = 20 V/µs
I
TM
= 1000 A, t
p
= 1 ms, di/dt = 10 A/µs,
V
R
= 50 V, V
DR
= 80%V
DRM
, dv
DR
/dt = 200 V/µs
I
FG
= 2 A, t
r
= 0.5 µs, V
D
= 67%V
DRM
,
I
TM
= 2000 A, di/dt = 10 A/µs, T
vj
= 25°C
µs
K/W
K/W
K/W
K/W
Nm
0.062 Single Thyristor
0.031 Whole Module
0.02 Single Thyristor
0.01 Whole Module
5.75
13.8
-
2)
Thermal resistance, case to heatsink
Mounting force (to heatsink)
Mounting force (to terminals)
Weight
Nm
kg
Diode Characteristics
PARAMETER
V
FM
V
T0
r
T
I
RRM
Q
rr
Q
ra
I
RM
t
rr
Maximum peak forward voltage
Threshold voltage
Slope resistance
Peak reverse current
Recovered Charge
Recovered Charge, 50% chord
Reverse recovery current
Reverse recovery time, 50% chord
Notes:
1) Unless otherwise indicated T
vj
=125°C.
2) Screws must be lubricated
MIN. TYP. MAX. TEST CONDITIONS
-
-
-
-
-
-
-
-
-
-
-
-
2200
1800
145
25
0.98 I
TM
= 1800 A
0.72
0.143
50
-
Rated V
RRM
1)
UNITS
V
V
mΩ
mA
µC
µC
A
µs
2250 I
TM
= 1000 A, t
p
= 1ms, di/dt = 10 A/µs,
V
R
= 50 V
-
-
Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2
Page 2 of 11
March, 2005
IXYS
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
12
14
16
18
V
DRM
V
DSM
V
RRM
V
1200
1400
1600
1800
Thyristor/Diode Module Types M##500-12io1 and M##500-18io1
V
RSM
V
1300
1500
1700
1900
V
D
V
R
DC V
820
930
1040
1150
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T
vj
below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 300A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 150A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
I
GM
4A/µs
I
G
t
p1
The magnitude of I
GM
should be between five and ten times I
GT
, which is shown on page 2. Its duration
(t
p1
) should be 20µs or sufficient to allow the anode current to reach ten times I
L
, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
G
should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times I
GT
.
Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2
Page 3 of 11
March, 2005
IXYS
8.0 Computer Modelling Parameters
8.1 Thyristor Dissipation Calculations
Thyristor/Diode Module Types M##500-12io1 and M##500-18io1
I
AV
=
−
V
T
0
+
V
T
0
+
4
⋅
ff
⋅
r
T
⋅
W
AV
2
⋅
ff
2
⋅
r
T
2
2
W
AV
=
and:
∆
T
R
th
∆
T
=
T
j
max
−
T
K
Where V
T0
= 0.85 V, r
T
= 0.27 mΩ for the thyristor and V
T0
= 0.72 V, r
T
= 0.143 mΩ for the diode.
R
th
= Supplementary thermal impedance, see table below and
ff
= Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle
Square wave
Sine wave
30°
0.07067
0.06767
60°
0.06791
0.06536
90°
0.06629
0.06408
120°
0.06525
0.0633
180°
0.06395
0.062
270°
0.06277
d.c.
0.062
Form Factors
Conduction Angle
Square wave
Sine wave
30°
3.464
3.98
60°
2.449
2.778
90°
2
2.22
120°
1.732
1.879
180°
1.414
1.57
270°
1.149
d.c.
1
8.2 Calculating thyristor V
T
using ABCD Coefficients
The on-state characteristic I
T
vs. V
T
, on page 6 is represented in two ways;
(i) the well established V
T0
and r
T
tangent used for rating purposes and
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V
T
in terms of
I
T
given below:
V
T
=
A
+
B
⋅
ln
(
I
T
)
+
C
⋅
I
T
+
D
⋅
I
T
The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The
resulting values for V
T
agree with the true device characteristic over a current range, which is limited to
that plotted.
25°C Coefficients
A
B
C
D
0.7860338
9.929062×10
1.94704×10
-3
-4
-3
125°C Coefficients
A
B
C
D
-0.099137717
0.1987038
4.23812×10
-0.01453705
-4
7.409213×10
Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2
Page 4 of 11
March, 2005
IXYS
8.3 D.C. Thermal Impedance Calculation
Thyristor/Diode Module Types M##500-12io1 and M##500-18io1
Where
p = 1
to
n
n
=
t
r
t
r
p
τ
p
−
t
τ
r
t
=
∑
r
p
⋅
1
−
e
p
p
=
1
p
=
n
number of terms in the series and
= Duration of heating pulse in seconds.
= Thermal resistance at time t.
= Amplitude of p
th
term.
= Time Constant of r
th
term).
The coefficients for this device are shown in the tables below:
D.C.
Term
1
0.05428
2.69428
2
4.4894×10
0.126017
-3
3
2.3382×10
0.013878
-3
4
8.759×10
1.435×10
-4
-3
r
p
τ
p
9.0 Reverse recovery ratings
(i) Q
ra
is based on 50% I
RM
chord as shown in Fig. 1
Fig. 1
(ii) Q
rr
is based on a 150 µs integration time i.e.
150
µ
s
Q
rr
=
(iii)
∫
i
0
rr
.
dt
t
1
K Factor
=
t
2
Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2
Page 5 of 11
March, 2005
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
