HSCH-55XX
Beam Lead Schottky Diode Pairs for Mixers and Detectors
Data Sheet
Description
These dual beam lead diodes are constructed using
a metal-semiconductor Schottky barrier junction.
Advanced epitaxial techniques and precise process
control insure uniformity and repeatability of this planar
passivated microwave semiconductor. A nitride passiva-
tion layer provides immunity from contaminants which
could otherwise lead to IR drift.
The Avago beam lead process allows for large beam
anchor pads for rugged construction (typical 6 gram pull
strength) without degrading capacitance.
Features
• Monolithic Pair: Closely Matched Electrical Parameters
• Low Capacitance: 0.1 pF Maximum at 0 Volts
• Low Noise Figure: Typical 7.5 dB at 26 GHz
•
•
•
•
Rugged Construction: 4 Grams Minimum Lead Pull
Platinum Tri-Metal System: High Temperature Stability
Polyimide Scratch Protection
Silicon Nitride Passivation: Stable, Reliable Performance
Applications
The beam lead diode is ideally suited for use in stripline
or microstrip or coplanar waveguide circuits. Its small
physical size and uniform dimensions give it low parasit-
ics and repeatable RF characteristics through K-band.
These dual beam leads are intended for use in balanced
mixers and in even harmonic anti-parallel pair mixers.
By using several of these devices in the proper configu-
ration it is easy to assemble bridge quads, star quads,
and ring quads for Class I, II, or III type double balanced
mixers.
Outline 04B
220 (9.0)
180 (7.0)
540 (21.0)
480 (19.0)
220 (9.0)
180 (7.0)
120 (5.0)
90 (3.5)
CATHODE
250 (10.0)
200 (8.0)
GOLD
BEAMS
GLASS
8 Min. (0.3)
190 (7.0)
160 (6.0)
Assembly Techniques
Thermocompression bonding is recommended. Welding
or conductive epoxy may also be used. For additional in-
formation see Application Note 979, “The Handling and
Bonding of Beam Lead Devices Made Easy,” or Applica-
tion Note 993, “Beam Lead Device Bonding to Soft Sub-
strates.”
PLATINUM
METALLIZATION
GLASS
60 (2.4)
40 (1.5)
ANODE
CATHODE
GLASS
DIMENSIONS IN m (1/1000 inch)
2
Maximum Ratings (for Each Diode)
Pulse Power Incident at T
A
= 25°C.............................................................................. 1 W
Pulse Width = 1
µs,
Du = 0.001
CW Power Dissipation at T
A
= 25°C .................................................................. 150 mW
Measured in an infinite heat sink derated linearly to zero at maximum rated temperature
T
OPR
– Operating Temperature Range .............................................-65°C to +175 °C
T
STG
– Storage Temperature Range ...................................................-65°C to +200°C
Minimum Lead Strength......................................................4 grams pull on any lead
Diode Mounting Temperature ................................................ 350°C for 10 sec. max.
These diodes are ESD sensitive. Handle with care to avoid static discharge through the diode.
Electrical Specifications for DC Tested Diodes at T
A
= 25°C
Part
Number
HSCH-
[1]
5512
5531
Test Conditions
Minimum
Breakdown
Voltage
V
BR
(V)
4
I
R
= 10
µA
Maximum
Dynamic
Resistance
R
D
(Ω)
16
20
I
F
= 5 mA
Max.
∆R
D
(Ω)
3
3
Maximum
Total
Capacitance
C
T
(pF)
0.15
0.10
Max.
∆C
T
(pF)
0.03
0.02
Maximum
Forward
Voltage
V
F
(mV)
500
375
I
F
= 1 mA
Max.
∆V
F
(mV)
10
Max.
I
R
(nA)
100
400
V
R
= 1
Barrier
Medium
Low
V = 0 V, f = 1 MHz
R
Note:
1. Standard Hi-Rel program available on HSCH-5531. Others are available upon request.
Typical Detector Characteristics at T = 25°C
A
Medium Barrier and Low Barrier (DC Bias)
Parameter
Tangential Sensitivity
Voltage Sensitivity
Video Resistance
Low Barrier (Zero Bias)
Parameter
Tangential Sensitivity
Voltage Sensitivity
Video Resistance
Symbol
TSS
γ
R
V
Typical Value
-46
17
1.4
Units
dBm
mV/µW
MΩ
Test Conditions
Zero Bias, Zero Bias, P
in
= -30 dBm,
R
L
= 10 MΩ, Video Bandwidth = 2 MHz
f = 10 GHz
Symbol
TSS
γ
R
V
Typical Value
-55
9.0
1350
Units
dBm
mV/µW
Ω
Test Conditions
20
µA
Bias, Zero Bias, P
in
= -40 dBm,
R
L
= 100 KΩ, Video Bandwidth = 2 MHz
f = 10 GHz
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