TSM4NB60
Taiwan Semiconductor
N-Channel Power MOSFET
600V, 4.0A, 2.5Ω
FEATURES
●
●
●
●
100% Avalanche Tested
Pb-free plating
Compliant to RoHS Directive 2011/65/EU and in
accordance to WEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
KEY PERFORMANCE PARAMETERS
PARAMETER
V
DS
R
DS(on)
(max)
Q
g
VALUE
600
2.5
14.5
UNIT
V
Ω
nC
APPLICATION
●
●
Power Supply
Lighting
TO-220
ITO-220
TO-251 (IPAK)
TO-251S (IPAK SL)
TO-252 (DPAK)
Notes:
Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
SYMBOL IPAK/DPAK ITO-220 TO-220 UNIT
V
DS
V
GS
T
C
= 25°C
T
C
= 100°C
I
D
I
DM
P
DTOT
E
AS
I
AS
E
AR
dV/dt
T
J
, T
STG
50
(Note 3)
(Note 3)
600
±30
4.0
2.4
16
25
70
4
5
4.5
- 55 to +150
70
V
V
A
A
W
mJ
A
mJ
V/ns
°C
(Note 2)
Total Power Dissipation @ T
C
= 25°C
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
(Note 4)
(Note 2)
Operating Junction and Storage Temperature Range
THERMAL PERFORMANCE
PARAMETER
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
SYMBOL IPAK/DPAK ITO-220 TO-220 UNIT
R
ӨJC
R
ӨJA
2.5
83
5
62.5
1.78
62.5
°C/W
°C/W
Notes:
R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. R
ӨJA
is guaranteed by design while R
ӨCA
is determined by the user’s board
design. R
ӨJA
shown below for single device operation on FR-4 PCB in still air.
Document Number: DS_P0000111
1
Version: I15
TSM4NB60
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Static
(Note 5)
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transfer Conductance
Dynamic
(Note 6)
V
GS
= 0V, I
D
= 250µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
= ±30V, V
DS
= 0V
V
DS
= 600V, V
GS
= 0V
V
GS
= 10V, I
D
= 2.0A
V
DS
= 40V, I
D
= 2A
BV
DSS
V
GS(TH)
I
GSS
I
DSS
R
DS(on)
g
fs
600
2.5
--
--
--
--
--
3.5
--
--
2.2
2.6
--
4.5
±100
1
2.5
--
V
V
nA
µA
Ω
S
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
(Note 7)
Q
g
V
DS
= 480V, I
D
= 4.0A,
V
GS
= 10V
Q
gs
Q
gd
C
iss
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
C
oss
C
rss
--
--
--
--
--
--
14.5
3.4
7
500
53.2
7
--
--
--
--
--
--
pF
nC
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Source Current
Source Current (Pulse)
Notes:
1.
2.
3.
4.
5.
6.
7.
Current limited by package.
Pulse width limited by the maximum junction temperature.
L = 8mH, I
AS
= 4.0A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C.
(Note 5)
t
d(on)
V
DD
= 300V,
R
GEN
= 25Ω,
I
D
= 4.0A, V
GS
= 10V,
t
r
t
d(off)
t
f
--
--
--
--
11
20
30
19
--
--
--
--
ns
I
S
= 4.0A, V
GS
= 0V
V
GS
=0V, I
S
= 2A
dI
F
/dt = 100A/μs
Integral reverse diode
in the MOSFET
V
SD
t
rr
Q
rr
I
S
I
SM
--
--
--
--
--
--
522
1.6
--
--
1.13
--
--
4
16
V
ns
μC
A
A
100% Eas Test Condition: L = 8mH, I
AS
= 2A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
I
SD
≤ 4A, dI/dt ≤ 200A/µs, V
DD
≤ BV
DSS
, Starting T
J
= 25°C.
Pulse test: PW ≤ 300µs, duty cycle ≤ 2%.
For DESIGN AID ONLY, not subject to production testing.
Switching time is essentially independent of operating temperature.
Document Number: DS_P0000111
2
Version: I15
TSM4NB60
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
TSM4NB60CZ C0G
TSM4NB60CI C0G
TSM4NB60CH C5G
TSM4NB60CH X0G
TSM4NB60CP ROG
PACKAGE
TO-220
ITO-220
TO-251 (IPAK)
TO-251 (IPAK SL)
TO-252 (DPAK)
PACKING
50pcs / Tube
50pcs / Tube
75pcs / Tube
75pcs / Tube
2,500pcs / 13” Reel
Document Number: DS_P0000111
3
Version: I15
TSM4NB60
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
C
= 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
Document Number: DS_P0000111
4
Version: I15
TSM4NB60
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
C
= 25°C unless otherwise noted)
Breakdown Voltage vs. Temperature
Threshold Voltage vs. Temperature
Maximum Safe Operating Area
Document Number: DS_P0000111
5
Version: I15
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