Memory Circuit, 2MX16, CMOS, PBGA72, 8 X 12 MM, 1.40 MM HEIGHT, STACK, CSP-72
参数名称 | 属性值 |
厂商名称 | Intel(英特尔) |
零件包装代码 | BGA |
包装说明 | LFBGA, |
针数 | 72 |
Reach Compliance Code | unknown |
其他特性 | SRAM IS CONFIGURED AS 128 K X 16 |
JESD-30 代码 | R-PBGA-B72 |
长度 | 12 mm |
内存密度 | 33554432 bit |
内存集成电路类型 | MEMORY CIRCUIT |
内存宽度 | 16 |
功能数量 | 1 |
端子数量 | 72 |
字数 | 2097152 words |
字数代码 | 2000000 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 85 °C |
最低工作温度 | -40 °C |
组织 | 2MX16 |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | LFBGA |
封装形状 | RECTANGULAR |
封装形式 | GRID ARRAY, LOW PROFILE, FINE PITCH |
认证状态 | Not Qualified |
座面最大高度 | 1.4 mm |
最大供电电压 (Vsup) | 3.3 V |
最小供电电压 (Vsup) | 2.7 V |
标称供电电压 (Vsup) | 3 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | INDUSTRIAL |
端子形式 | BALL |
端子节距 | 0.8 mm |
端子位置 | BOTTOM |
宽度 | 8 mm |
RD28F3202C3T110 | RD28F3204C3B100 | RD28F3204C3B110 | RD28F3208C3T100 | RD28F3208C3T110 | RD28F3202C3B110 | RD28F3208C3B110 | |
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描述 | Memory Circuit, 2MX16, CMOS, PBGA72, 8 X 12 MM, 1.40 MM HEIGHT, STACK, CSP-72 | Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA72, 8 X 12 MM, 1.40 MM HEIGHT, STACK, CSP-72 | Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA68, 8 X 14 MM, 1.40 MM HEIGHT, STACK, CSP-68 | Memory IC | Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA68, 8 X 14 MM, 1.40 MM HEIGHT, STACK, CSP-68 | Memory Circuit, 2MX16, CMOS, PBGA72, 8 X 12 MM, 1.40 MM HEIGHT, STACK, CSP-72 | Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA68, 8 X 14 MM, 1.40 MM HEIGHT, STACK, CSP-68 |
包装说明 | LFBGA, | LFBGA, BGA68,8X12,32 | LFBGA, BGA68,8X12,32 | , | LFBGA, BGA68,8X12,32 | LFBGA, | LFBGA, BGA68,8X12,32 |
Reach Compliance Code | unknown | unknow | unknow | unknown | compliant | unknown | compliant |
厂商名称 | Intel(英特尔) | - | - | Intel(英特尔) | Intel(英特尔) | Intel(英特尔) | Intel(英特尔) |
零件包装代码 | BGA | BGA | BGA | - | BGA | BGA | BGA |
针数 | 72 | 72 | 68 | - | 68 | 72 | 68 |
其他特性 | SRAM IS CONFIGURED AS 128 K X 16 | SRAM IS CONFIGURED AS 256 K X 16 | SRAM IS ORGANISED AS 256K X 16 | - | SRAM IS ORGANISED AS 512K X 16 | SRAM IS CONFIGURED AS 128 K X 16 | SRAM IS ORGANISED AS 512K X 16 |
JESD-30 代码 | R-PBGA-B72 | R-PBGA-B72 | R-PBGA-B68 | - | R-PBGA-B68 | R-PBGA-B72 | R-PBGA-B68 |
长度 | 12 mm | 12 mm | 14 mm | - | 14 mm | 12 mm | 14 mm |
内存密度 | 33554432 bit | 33554432 bi | 33554432 bi | - | 33554432 bit | 33554432 bit | 33554432 bit |
内存集成电路类型 | MEMORY CIRCUIT | MEMORY CIRCUIT | MEMORY CIRCUIT | - | MEMORY CIRCUIT | MEMORY CIRCUIT | MEMORY CIRCUIT |
内存宽度 | 16 | 16 | 16 | - | 16 | 16 | 16 |
功能数量 | 1 | 1 | 1 | - | 1 | 1 | 1 |
端子数量 | 72 | 72 | 68 | - | 68 | 72 | 68 |
字数 | 2097152 words | 2097152 words | 2097152 words | - | 2097152 words | 2097152 words | 2097152 words |
字数代码 | 2000000 | 2000000 | 2000000 | - | 2000000 | 2000000 | 2000000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | - | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 85 °C | 85 °C | 85 °C | - | 85 °C | 85 °C | 85 °C |
最低工作温度 | -40 °C | -40 °C | -25 °C | - | -25 °C | -40 °C | -25 °C |
组织 | 2MX16 | 2MX16 | 2MX16 | - | 2MX16 | 2MX16 | 2MX16 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | LFBGA | LFBGA | LFBGA | - | LFBGA | LFBGA | LFBGA |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | GRID ARRAY, LOW PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE, FINE PITCH | - | GRID ARRAY, LOW PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE, FINE PITCH |
认证状态 | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 1.4 mm | 1.4 mm | 1.4 mm | - | 1.4 mm | 1.4 mm | 1.4 mm |
最大供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | - | 3.3 V | 3.3 V | 3.3 V |
最小供电电压 (Vsup) | 2.7 V | 2.7 V | 2.7 V | - | 2.7 V | 2.7 V | 2.7 V |
标称供电电压 (Vsup) | 3 V | 3 V | 3 V | - | 3 V | 3 V | 3 V |
表面贴装 | YES | YES | YES | - | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | - | CMOS | CMOS | CMOS |
温度等级 | INDUSTRIAL | INDUSTRIAL | OTHER | - | OTHER | INDUSTRIAL | OTHER |
端子形式 | BALL | BALL | BALL | - | BALL | BALL | BALL |
端子节距 | 0.8 mm | 0.8 mm | 0.8 mm | - | 0.8 mm | 0.8 mm | 0.8 mm |
端子位置 | BOTTOM | BOTTOM | BOTTOM | - | BOTTOM | BOTTOM | BOTTOM |
宽度 | 8 mm | 8 mm | 8 mm | - | 8 mm | 8 mm | 8 mm |
最长访问时间 | - | 100 ns | 110 ns | - | 110 ns | - | 110 ns |
混合内存类型 | - | FLASH+SRAM | FLASH+SRAM | - | FLASH+SRAM | - | FLASH+SRAM |
封装等效代码 | - | BGA68,8X12,32 | BGA68,8X12,32 | - | BGA68,8X12,32 | - | BGA68,8X12,32 |
电源 | - | 3 V | 3 V | - | 3 V | - | 3 V |
最大待机电流 | - | 0.000045 A | 0.000045 A | - | 0.000006 A | - | 0.000006 A |
最大压摆率 | - | 0.055 mA | 0.055 mA | - | 0.055 mA | - | 0.055 mA |
Base Number Matches | - | 1 | 1 | 1 | 1 | - | - |
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