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JANTXV2N2605UB

产品描述Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3
产品类别分立半导体    晶体管   
文件大小152KB,共4页
制造商Microsemi
官网地址https://www.microsemi.com
下载文档 详细参数 选型对比 全文预览

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JANTXV2N2605UB概述

Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3

JANTXV2N2605UB规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
Objectid1811392269
包装说明CERAMIC PACKAGE-3
针数3
Reach Compliance Codeunknown
ECCN代码EAR99
最大集电极电流 (IC)0.03 A
集电极-发射极最大电压60 V
配置SINGLE
最小直流电流增益 (hFE)100
JESD-30 代码R-CDSO-N3
JESD-609代码e0
元件数量1
端子数量3
最高工作温度200 °C
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型PNP
认证状态Not Qualified
参考标准MIL-19500/354
表面贴装YES
端子面层TIN LEAD
端子形式NO LEAD
端子位置DUAL
晶体管元件材料SILICON

文档预览

下载PDF文档
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PNP SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/354
DEVICES
LEVELS
2N2604
2N2605
2N2604UB
2N2605UB
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T
A
= +25°C
(1)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Thermal Resistance, Junction-to-Ambient
UB
Note:
1/ Consult 19500/354 for thermal curves
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Base Cutoff Current
V
CB
= 80V dc
2N2604, UB
V
CB
= 70V dc
2N2605, UB
V
CB
= 50V dc
2N2604, 2N2605, UB
V
CB
= 50V dc, T
A
= +150°C
2N2604, 2N2605, UB
Collector-Emitter Breakdown Current
I
C
= 10mAdc
Emitter-Base Cutoff Current
V
EB
= 6.0Vdc
V
EB
= 5.0Vdc
Collector-Emitter Cutoff Current
V
CE
= 50Vdc
Symbol
Min.
Max.
Unit
Symbol
R
θJA
Max.
437
275
Unit
°C/mW
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
J
, T
stg
2N2604
80
60
6.0
30
400
-65 to +200
2N2605
70
Unit
Vdc
Vdc
Vdc
mAdc
mW/°C
°C
TO-46 (TO-206AB)
I
CBO
10.0
10.0
10.0
5.0
60
10.0
2.0
10
uAdc
nAdc
uAdc
uAdc
Vdc
uAdc
ηAdc
ηAdc
UB Package
V
(BR)CEO
I
EBO
I
CES
T4-LDS-0092 Rev. 2 (101320)
Page 1 of 4

JANTXV2N2605UB相似产品对比

JANTXV2N2605UB AL-HSB(X)-7 PSMN013-30MLC_15 JAN2N2605UB 2N2605UBE3 TVR20621RKJCY CCN-7909LF-06-1960-D-D P1005K2914DGTC ATE1P-5M3-10-Z B13JV-JC
描述 Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3 SINGLE CHIP SOLUTION FOR 1-CELL Li BATTERY PACK N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3 Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3 Varistor, 510V, 220J, Through Hole Mount, RADIAL LEADED, ROHS COMPLIANT Array/Network Resistor, Isolated, Tantalum Nitride/nickel Chrome, 0.1W, 196ohm, 0.5% +/-Tol, -50,50ppm/Cel, 3535, Fixed Resistor, Thin Film, 0.25W, 2910000ohm, 75V, 0.5% +/-Tol, 100ppm/Cel, Surface Mount, 1005, CHIP Subminiature Toggle Switch General Specifications
Objectid 1811392269 - - 1811391952 8059221233 1121891172 793423251 283363309 - -
Reach Compliance Code unknown - - unknown compliant unknown compliant compliant - -
ECCN代码 EAR99 - - EAR99 EAR99 EAR99 EAR99 EAR99 - -
端子数量 3 - - 3 3 2 20 2 - -

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