PTF 10049
85 Watts, 470–860 MHz
GOLDMOS
™
Field Effect Transistor
Description
The PTF 10049 is an internally matched, common source, N-channel
enhancement-mode lateral MOSFET intended for large signal television
amplifier applications in the 470 to 860 MHz band. It is rated at 85 watts
power output. Nitride surface passivation and full gold metallization
ensure excellent device lifetime and reliability.
•
•
•
•
•
•
INTERNALLY MATCHED
Performance at 800 MHz, 32 Volts
- Output Power = 85 Watts
- Power Gain = 13.5 dB Typ
- Efficiency = 58% Typ
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
100% Lot Traceability
Typical Output Power and Efficiency vs. Input Power
110
100
90
80
70
60
50
40
30
20
10
0
0
2
90
80
Output Power
Efficiency
Output Power (Watts)
60
50
Efficiency (%)
70
A-1
100
49
234
569
813
V
DD
= 32 V
I
DQ
= 400 mA
per side
f = 800 MHz
4
6
40
30
20
10
0
Input Power (Watts)
Package 20240
RF Specifications
(100% Tested)
Characteristic
Common Source Power Gain
(V
DD
= 32 V, P
OUT
= 30 W, I
DQ
= 400 mA per side, f = 800 MHz)
Power Output at 1 dB Compression
(V
DD
= 32 V, I
DQ
= 400 mA per side, f = 800 MHz)
Drain Efficiency
(V
DD
= 32 V, P
OUT
= 85 W, I
DQ
= 400 mA per side, f = 800 MHz)
Distortion
(V
DD
= 32 V, P
OUT
= 85 W(PEP), I
DQ
= 400 mA per side,
f
1
= 800 MHz, f
2
= 801 MHz)
Load Mismatch Tolerance
(V
DD
= 32 V, P
OUT
= 42.5 W, I
DQ
= 400 mA per side, f = 800 MHz
—all phase angles at frequency of test)
All published data at T
CASE
= 25°C unless otherwise indicated.
Symbol
G
ps
P-1dB
h
D
IMD
3
Min
12.0
85
52
–30
Typ
13.5
100
58
–35
Max
—
—
—
—
Units
dB
Watts
%
dBc
Y
—
—
5:1
—
e
1
PTF 10049
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
V
(BR)DSS
I
DSS
V
GS(th)
g
fs
e
Min
65
—
3.0
—
Typ
—
—
—
2.8
Max
—
1.0
5.0
—
Units
Volts
mA
Volts
Siemens
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 25 mA
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
V
DS
= 32 V, V
GS
= 0 V
V
DS
= 10 V, I
D
= 75 mA
V
DS
= 10 V, I
D
= 3 A
Maximum Ratings
Parameter
Drain-Source Voltage
(1)
Gate-Source Voltage
(1)
Operating Junction Temperature
Total Device Dissipation at
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C)
(1)
Symbol
V
DSS
V
GS
T
J
P
D
T
STG
R
qJC
Value
65
±20
200
225
2.0
–40 to +150
0.5
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
per side
Typical Performance
Output Power vs. Supply Voltage
90
Intermodulation Distortion vs. Power Output
-10
-15
Output Power (Watts)
V
DD
= 32 V
I
DQ
= 400 mA per side
f
1
= 800 MHz
f
2
= 801 MHz
IM5
IM3
-20
80
IMD (dBc)
-25
-30
-35
-40
-45
-50
-55
-60
70
60
I
DQ
= 400 mA per side
f = 800 MHz
P
IN
= 5.5 W
26
28
30
32
34
IM7
10
20
30
40
50
60
70
80
90
100
50
Supply Voltage
Output Power (Watts-PEP)
2
e
Gain vs. Frequency
(as measured in a broadband circuit)
17
16
-40
-35
PTF 10049
3-Tone Test (8, 10, 16) vs. Power Output
V
DD
= 32 V
I
DQ
= 400 mA per side
IMD (dBc)
-45
-50
-55
-60
-65
15
Gain (dB)
f
1
= 801.25 MHz
f
2
= 804.83 MHz
f
3
= 805.75 MHz
14
13
12
11
10
9
470
570
V
DD
= 32 V
I
DQ
= 400 mA per side
P
OUT
= 20 W
670
770
870
10
20
30
40
50
60
70
80
90
100
Frequency (MHz)
Output Power (Watts-PEP)
Bias Voltage vs. Temperature
1.03
1.02
Bias Voltage (V)
1.01
1.00
0.43
Voltage normalized to 1.0 V
Series show current (A)
0.99
0.98
0.97
0.96
0.95
-20
30
80
Temp. (°C)
1.25
2.08
2.9
3.71
4.53
130
3
e
Test Circuit
PTF 10049
Block diagram for f = 470–806 MHz broadband circuit
Q1
L1, L2, L25, L26
L3, L4
L5, L6
L7, L8
L9, L10
L11, L12
L13, L14
L15, L16
L17, L18
L19, L20
L21, L22
L23, L24
L27, L28
C1, C2, C22, C23
PTF 10049
0.25
l
680 MHz
0.065
l
800 MHz
10 nH
0.010
l
800 MHz
0.07
l
800 MHz
0.060
l
800 MHz
0.0525
l
800 MHz
0.061
l
800 MHz
0.032
l
800 MHz
0.021
l
800 MHz
0.01
l
800 MHz
4x8 mm
0.25
l
680 MHz
51 pF
Microstrip 25
W
Microstrip 70
W
SMT Coil
Microstrip 18.5
W
Microstrip 18.5
W
Microstrip 10.2
W
Microstrip 8.1
W
Microstrip 9.3
W
Microstrip 12.13
W
Microstrip 22.6
W
Microstrip 22.6
W
Ferrite Bead
Microstrip 60
W
Chip Cap ATC 100 B
C3, C4, C11, C12
C5, C6, C13, C14
C7, C8, C15, C16
C9, C17
C18
C19, C20
C10, C21
R1, R3
R2, R4
R5, R6
R7, R8
R9, R10
T1, T2
Circuit Board
91 pF
Chip Cap ATC 100 B
0.1
mF
SMT K1206
10
mF
Electrolytic Capacitor
5.6 pF
Chip Cap ATC 100 B
1.3 pF
Chip Cap ATC 100 B
1.7 pF
Chip Cap ATC 100 B
7.5 pF
Chip Cap ATC 100 B
200
W
K 1206 SMT Resistor
200
W
K 1206 SMT Resistor
1K
W
Pot
500
W
1/4 W Resistor
1.8
W
1/4 W Resistor
UT-85-25 Balun Coaxial
.028" Dielectric Thickness,
e
r
= 4.0,
AlliedSignal, G200, 2 oz. copper
Placement Diagram
5
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