DATA SHEET
SEMICONDUCTOR
US1A~US1M
SURFACE MOUNT REVERSE VOLTAGE - 50 to 1000 Volts
ULT RA FAST RECTI FIERS FORWARD CURRENT - 1.0 Ampere
FEATURES
•
Glass passivated chip
•
Ultra fast switching for high efficiency
•
For surface mounted applications
•
Low forward voltage drop and high current capability
•
Low reverse leakage current
•
Plastic material has UL flammability classification 94V-0
•
High temperature soldering : 260
O
C
°C
10 seconds at terminals
/
•
Pb free product at available : 99% Sn above meet RoHS environment
substance directive request
.181 (4.60)
.157(4.00)
.062(1.60)
.047(1.20)
.114(2.90)
.098(2.50)
SMA/DO-214AC
Unit:inch(mm)
MECHANCALDATA
•
Case: ITO-220AB full molded plastic package
•
Case : Molded plastic
•
Polarity : Indicated by cathode band
•
Weight : 0.002 ounces, 0.064 grams
.060(1.52)
.030(0.76)
.008(.203 )
.002(.051)
.208(5.28)
.188(4.80)
.096(2.44)
.078(2.00)
.012(.305)
.006(.152)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
°C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse V oltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
@TL =75
°C
SYMBOL
VRRM
VRMS
VDC
IAV
US1A
50
35
50
US1B
100
70
100
US1D
200
140
200
US1G
400
280
400
1.0
US1J
600
420
600
US1K
800
560
800
US1M
1000
700
1000
UNITS
V
V
V
A
Peak Forward Surge Current
8.3ms single half sine- wave
super imposed on rated load (JEDEC METHOD)
Maxi mum f orward Voltage at 1.0A DC
Maxi mum DC Reverse Cur rent
at Rated DC Bl ocking Voltage
@TJ =25
°C
@TJ =100
°C
VF
IR
CJ
TRR
R JC
TJ
TSTG
20
50
30
-55 to +150
-55 to +150
1.0
1.3
5
100
10
75
1.5
1.7
V
µA
pF
ns
°C/W
°C
°C
IFSM
30
A
Maximum Reverse Recovery Time (Note 1)
Typical Junction
Capacitance (Note 2)
Typical Thermal Resistance (Note 3 )
Operati ng Temperature Range
Storage Temperature Range
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: I
F
=.5A, I
R
=1A, Irr=.25A.
3. Thermal resistance from Junction to ambient and from junction to lead 0.375” (9.5mm) P.C.B mounted.
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REV.02 20110725
RATING AND CHARACTERISTIC CURVES
US1A~US1M
t
rr
+0.5A
0
-0.25
NOTE:1.Rise Time = 7ns max.
Input Impedance = 1 megohm. 22pF
2.Rise Time = 10ns max.
Source Impedance = 50 Ohms
-1.0
SET TIME
BASE FOR
50 ns/cm
1cm
Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
10
TYPICAL
TJ = 25
°C
1.0
US1A
AVERAGE FORWARD CURRENT,
AMPERES
IFM, Apk
2.0
US1G
0.1
SINGLE PHASE HALF WAVE
RESISTIVE OR INDUCTIVE
P.C.B MOUNTED ON
0.315×0.315"(8.0×8.0mm)
PAD AREAS
1.0
US1M
.01
0
.
2
.4
.
6
25
.8
1.0 1.2
1.4
50
75 100 125 150 175
LEAD TEMPERATURE,
Fig. 2-FORWARD CHARACTERISTICS
100
Fig. 3-FORWARD CURRENT DERATING CURVE
PEAK FORWARD SURGE CURRENT,
AMPERES
30
25
20
15
10
5
8.3ms SINGLE HALF SINE WAVE
JEDEC METHOD
JUNCTION CAPACITANCE, pF
TJ = 25
°C
f = 1.0MHz
Vsig = 50m Vp-p
10
1
0.1
1
10
100
1
2
5
10
20
50
100
REVERSE VOLTAGE, VOLTS
NUMBER OF CYCLES AT 60Hz
Fig. 4-TYPICAL JUNCTION CAPACITANCE
Fig. 5-PEAK FORWARD SURGE CURRENT
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REV.02 20110725
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