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MWS5114D3: 产品描述1KX4 STANDARD SRAM, 200ns, CDIP18; 产品类别存储存储; 文件大小29KB，共7页; 制造商Renesas(瑞萨电子); 官网地址https://www.renesas.com/

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MWS5114D3概述

1KX4 STANDARD SRAM, 200ns, CDIP18

MWS5114D3规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Renesas(瑞萨电子)
零件包装代码	DIP
包装说明	DIP, DIP18,.3
针数	18
Reach Compliance Code	not_compliant
ECCN代码	EAR99
最长访问时间	200 ns
其他特性	LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS
I/O 类型	COMMON
JESD-30 代码	R-CDIP-T18
JESD-609代码	e0
内存密度	4096 bit
内存集成电路类型	STANDARD SRAM
内存宽度	4
功能数量	1
端口数量	1
端子数量	18
字数	1024 words
字数代码	1000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	1KX4
输出特性	3-STATE
可输出	NO
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装代码	DIP
封装等效代码	DIP18,.3
封装形状	RECTANGULAR
封装形式	IN-LINE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED
电源	5 V
认证状态	Not Qualified
最大待机电流	0.00005 A
最小待机电流	2 V
最大压摆率	0.008 mA
最大供电电压 (Vsup)	6.5 V
最小供电电压 (Vsup)	4.5 V
标称供电电压 (Vsup)	5 V
表面贴装	NO
技术	CMOS
温度等级	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	THROUGH-HOLE
端子节距	2.54 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED

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MWS5114

March 1997

1024-Word x 4-Bit

LSI Static RAM

Description

The MWS5114 is a 1024 word by 4-bit static random access

memory that uses the ion-implanted silicon gate comple-

mentary MOS (CMOS) technology. It is designed for use in

memory systems where low power and simplicity in use are

desirable. This type has common data input and data output

and utilizes a single power supply of 4.5V to 6.5V.

The MWS5114 is supplied in 18 lead, hermetic, dual-in-line

sidebrazed ceramic packages (D sufﬁx) and in 18 lead dual-

in-line plastic packages (E sufﬁx).

Features

• Fully Static Operation

• Industry Standard 1024 x 4 Pinout (Same as Pinouts

for 6514, 2114, 9114, and 4045 Types)

• Common Data Input and Output

• Memory Retention for Standby Battery Voltage as Low

as 2V Min

• All Inputs and Outputs Directly TTL Compatible

• Three-State Outputs

• Low Standby and Operating Power

Ordering Information

200ns

MWS5114E3

MWS5114D3

MWS5114D3X

250ns

MWS5114E2

MWS5114E2X

MWS5114D2

300ns

MWS5114E1

MWS5114D1

TEMPERATURE RANGE

C to +70

PACKAGE

PDIP

Burn-In

SBDIP

Burn-In

PKG. NO.

E18.3

D18.3

Pinout

MWS5114

(PDIP, SBDIP)

TOP VIEW

18 V

17 A7

16 A8

15 A9

14 I/O1

13 I/O2

12 I/O3

11 I/O4

10 WE

OPERATIONAL MODES

FUNCTION

Read

Write

Not Selected

DATA PINS

Output: Dependent on data

Input

High Impedance

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207

Intersil Corporation 1999

File Number

1325.2

6-160

MWS5114D3相似产品对比

	MWS5114D3	MWS5114D3X	MWS5114D2	MWS5114E2	MWS5114D1	MWS5114E1	MWS5114E2X
描述	1KX4 STANDARD SRAM, 200ns, CDIP18	1KX4 STANDARD SRAM, 200ns, CDIP18, SIDE BRAZED, CERAMIC, DIP-18	1KX4 STANDARD SRAM, 250ns, CDIP18, SIDE BRAZED, CERAMIC, DIP-18	1KX4 STANDARD SRAM, 250ns, PDIP18, PLASTIC, DIP-18	1KX4 STANDARD SRAM, 300ns, CDIP18	1KX4 STANDARD SRAM, 300ns, PDIP18	1KX4 STANDARD SRAM, 250ns, PDIP18
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合
厂商名称	Renesas(瑞萨电子)	Renesas(瑞萨电子)	Renesas(瑞萨电子)	Renesas(瑞萨电子)	Renesas(瑞萨电子)	Renesas(瑞萨电子)	Renesas(瑞萨电子)
零件包装代码	DIP	DIP	DIP	DIP	DIP	DIP	DIP
包装说明	DIP, DIP18,.3	DIP, DIP18,.3	SIDE BRAZED, CERAMIC, DIP-18	PLASTIC, DIP-18	SIDE BRAZED, CERAMIC, DIP-18	PLASTIC, DIP-18	PLASTIC, DIP-18
针数	18	18	18	18	18	18	18
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	_compli	_compli	_compli
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最长访问时间	200 ns	200 ns	250 ns	250 ns	300 ns	300 ns	250 ns
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-CDIP-T18	R-CDIP-T18	R-CDIP-T18	R-PDIP-T18	R-CDIP-T18	R-PDIP-T18	R-PDIP-T18
JESD-609代码	e0	e0	e0	e0	e0	e0	e0
内存密度	4096 bit	4096 bit	4096 bit	4096 bit	4096 bi	4096 bi	4096 bi
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
内存宽度	4	4	4	4	4	4	4
功能数量	1	1	1	1	1	1	1
端子数量	18	18	18	18	18	18	18
字数	1024 words	1024 words	1024 words	1024 words	1024 words	1024 words	1024 words
字数代码	1000	1000	1000	1000	1000	1000	1000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
组织	1KX4	1KX4	1KX4	1KX4	1KX4	1KX4	1KX4
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	PLASTIC/EPOXY	CERAMIC, METAL-SEALED COFIRED	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	DIP	DIP	DIP	DIP	DIP	DIP	DIP
封装等效代码	DIP18,.3	DIP18,.3	DIP18,.3	DIP18,.3	DIP18,.3	DIP18,.3	DIP18,.3
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
电源	5 V	5 V	5 V	5 V	5 V	5 V	5 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大待机电流	0.00005 A	0.00005 A	0.00005 A	0.00005 A	0.000125 A	0.000125 A	0.00005 A
最小待机电流	2 V	2 V	2 V	2 V	2 V	2 V	2 V
最大压摆率	0.008 mA	0.008 mA	0.008 mA	0.008 mA	0.008 mA	0.008 mA	0.008 mA
最大供电电压 (Vsup)	6.5 V	6.5 V	6.5 V	6.5 V	6.5 V	6.5 V	6.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	NO	NO	NO	NO	NO	NO	NO
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子节距	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
其他特性	LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS	-	-	-	LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS	LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS	LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS
端口数量	1	-	-	-	1	1	1
可输出	NO	-	-	-	NO	NO	NO

MWS5114D3

MWS5114D3概述

MWS5114D3规格参数

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