SO
T2
3
PMV33UPE
20 V, single P-channel Trench MOSFET
Rev. 1 — 12 June 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
Low threshold voltage
Very fast switching
Trench MOSFET technology
2 kV ESD protected
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
V
GS
= -4.5 V; T
amb
= 25 °C; t
≤
5 s
V
GS
= -4.5 V; I
D
= -3 A; T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
Min
-
-8
-
-
Typ
-
-
-
30
Max
-20
8
-5.3
36
Unit
V
V
A
mΩ
Static characteristics
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
NXP Semiconductors
PMV33UPE
20 V, single P-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
G
S
D
gate
source
drain
1
2
G
Simplified outline
3
Graphic symbol
D
SOT23 (TO-236AB)
S
017aaa259
3. Ordering information
Table 3.
Ordering information
Package
Name
PMV33UPE
TO-236AB
Description
plastic surface-mounted package; 3 leads
Version
SOT23
Type number
4. Marking
Table 4.
Marking codes
Marking code
[1]
EJ%
Type number
PMV33UPE
[1]
% = placeholder for manufacturing site code
PMV33UPE
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 12 June 2012
2 of 15
NXP Semiconductors
PMV33UPE
20 V, single P-channel Trench MOSFET
5. Limiting values
Table 5.
Symbol
V
DS
V
GS
I
D
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= -4.5 V; T
amb
= 25 °C; t
≤
5 s
V
GS
= -4.5 V; T
amb
= 25 °C
V
GS
= -4.5 V; T
amb
= 100 °C
I
DM
P
tot
peak drain current
total power dissipation
T
amb
= 25 °C; single pulse; t
p
≤
10 µs
T
amb
= 25 °C
T
sp
= 25 °C
T
j
T
amb
T
stg
I
S
V
ESD
[1]
[2]
[3]
[2]
[1]
[1]
[1]
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
= 25 °C
Min
-
-8
-
-
-
-
-
-
-
-55
-55
-65
T
amb
= 25 °C
HBM
[1]
Max
-20
8
-5.3
-4.4
-2.8
-17.6
490
980
4150
150
150
150
-1.2
2000
Unit
V
V
A
A
A
A
mW
mW
mW
°C
°C
°C
A
V
junction temperature
ambient temperature
storage temperature
source current
electrostatic discharge voltage
Source-drain diode
-
-
ESD maximum rating
[3]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Measured between all pins.
120
P
der
(%)
80
017aaa123
120
I
der
(%)
80
017aaa124
40
40
0
−75
−25
25
75
125
T
j
(°C)
175
0
−75
−25
25
75
125
T
j
(°C)
175
Fig 1.
Normalized total power dissipation as a
function of junction temperature
Fig 2.
Normalized continuous drain current as a
function of junction temperature
© NXP B.V. 2012. All rights reserved.
PMV33UPE
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 1 — 12 June 2012
3 of 15
NXP Semiconductors
PMV33UPE
20 V, single P-channel Trench MOSFET
-10
2
I
D
(A)
-10
t
p
= 1 ms
-1
t
p
= 10 ms
Limit R
DSon
= V
DS
/I
D
017aaa601
DC; T
sp
= 25 °C
-10
-1
DC; T
amb
= 25 °C;
drain mounting pad 6 cm
2
-10
-2
0
-1
-10
t
p
= 100 ms
-10
2
V
DS
(V)
I
DM
= single pulse
Fig 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
Conditions
in free air
[1]
[2]
[3]
Min
-
-
-
-
Typ
222
111
74
25
Max
255
128
85
30
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
2
, t
≤
5 s.
PMV33UPE
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 12 June 2012
4 of 15
NXP Semiconductors
PMV33UPE
20 V, single P-channel Trench MOSFET
10
3
Z
th(j-a)
(K/W)
10
2
0.33
0.2
0.1
10
0.05
0.02
0.01
0
017aaa602
duty cycle = 1
0.75
0.5
0.25
1
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 4.
10
3
Z
th(j-a)
(K/W)
duty cycle = 1
10
2
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
0
1
10
-3
0.01
10
-2
10
-1
10
2
t
p
(s)
10
3
0.25
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa603
1
10
FR4 PCB, mounting pad for drain 6 cm
2
Fig 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMV33UPE
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 12 June 2012
5 of 15
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