SSG4801
Elektronische Bauelemente
-5 A, -30 V, R
DS(ON)
50 m
Dual-P Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG4801 uses advanced trench technology to
provide excellent on-resistance, low gate charge and
operation with gate voltages as low as 2.5V. The device is
suitable for use as a load switch or in PWM applications.
It may be used in a common drain arrangement to from a
bidirectional blocking switch.
SOP-8
B
L
D
M
FEATURES
A
C
N
J
K
Simple Drive Requirement
Lower On-resistance
Low Gate Charge
H
G
F
E
MARKING
REF.
4801SS
= Date Code
A
B
C
D
E
F
G
Millimeter
Min.
Max.
5.80
6.20
4.80
5.00
3.80
4.00
0°
8°
0.40
0.90
0.19
0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min.
Max.
0.35
0.49
0.375 REF.
45°
1.35
1.75
0.10
0.25
0.25 REF.
PACKAGE INFORMATION
Package
SOP-8
MPQ
2.5K
LeaderSize
13’ inch
S1
D1
G1
D1
D2
D2
S2
G2
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
Total Power Dissipation
Linear Derating Factor
Operating Junction & Storage Temperature Range
Thermal Resistance Junction-ambient
1
(Max.)
Notes：
1. Surface Mounted on FR4 Board, t
≦
10sec.
2. Pulse width
≦
300
μs,
duty cycle
≦
2%
1
Symbol
V
DS
V
GS
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
I
D
I
DM
P
D
T
J
, T
STG
R
θJA
Ratings
-30
±12
-5
-4.2
-30
2
0.016
-55 ~ 150
62.5
Unit
V
V
A
A
W
W / °C
°C
°C / W
Thermal Resistance Ratings
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
19-Jan-2011 Rev. A
Page 1 of 4
SSG4801
Elektronische Bauelemente
-5 A, -30 V, R
DS(ON)
50 m
Dual-P Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
2
Gate-Source Leakage Current
Drain-Source Leakage
Current
T
J
=25°C
T
J
=55°C
2
Symbol
BV
DSS
V
GS(th)
g
fs
I
GSS
I
DSS
Min
-30
-0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
11
-
-
-
-
-
-
9.5
2.0
3.1
12
4
37
12
952
103
77
Max
-
-1.0
-
±100
-1
-5
50
65
120
-
-
-
-
-
-
-
-
-
-
Unit
V
V
S
nA
μA
μA
mΩ
Test condition
V
GS
=0V, I
D
= -250uA
V
DS
=V
GS
, I
D
= -250uA
V
DS
= -5V, I
D
= -5A
V
GS
= ±12V
V
DS
= -24V, V
GS
=0V
V
DS
= -24V, V
GS
=0V
V
GS
= -10V, I
D
= -5A
V
GS
= -4.5V, I
D
= -4A
V
GS
= -2.5V, I
D
= -1A
V
DS
= -15V, I
D
= -5A, V
GS
= -4.5V
Static Drain-Source On-Resistance
Total Gate Charge
2
Gate-Source Chagre
Gate-Drain (“Miller”) Change
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward On Voltage
2
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(ON)
T
r
T
d(OFF)
T
f
C
ISS
C
OSS
C
RSS
nC
nS
V
DS
= -15V, V
GS
= -10V
R
L
=3Ω, R
G
=6Ω
V
DS
= -15V
V
GS
=0V
f=1.0MHz
pF
Source-Drain Diode
V
SD
-
-
-1.2
V
I
S
= -1.7A, V
GS
=0V
Notes：
1 Surface Mounted on FR4 Board, t
≦
10sec.
2. Pulse width
≦
300
μs,
duty cycle
≦
2%
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
19-Jan-2011 Rev. A
Page 2 of 4
SSG4801
Elektronische Bauelemente
-5 A, -30 V, R
DS(ON)
50 m
Dual-P Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
19-Jan-2011 Rev. A
Page 3 of 4
SSG4801
Elektronische Bauelemente
-5 A, -30 V, R
DS(ON)
50 m
Dual-P Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
19-Jan-2011 Rev. A
Page 4 of 4
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