AVT-55689
50 – 6000 MHz
InGaP HBT Gain Block
Data Sheet
Description
Avago Technologies’ AVT-55689 is an economical, easy-to-
use, general purpose InGaP HBT MMIC gain block amplifier
utilizing Darlington pair configuration housed in a 3-lead
(SOT 89) surface mount plastic package.
The Darlington feedback structure provides inherent
broad bandwidth performance, resulting in useful
operating frequency up to 6 GHz. This is an ideal device
for small-signal gain cascades or IF amplification.
AVT-55689 is fabricated using advanced InGaP HBT
(hetero-junction Bipolar Transistor) technology that
offering state-of-the-art reliability, temperature stability
and performance consistency.
Features
•
Small signal gain amplifier
•
Operating frequency 50 MHz to 6 GHz
•
Unconditionally stable
•
50 Ohm input & output
•
Industry standard SOT-89
•
Lead-free, RoHS compliant, Green
Specifications
2 GHz, 5 V Vcc, 75 mA (typ.)
•
17.2 dB Gain
•
19.5 dBm P1dB
•
32.5 dBm OIP3
•
4.3 dB NF
•
19 dB IRL and 10.7 dB ORL
Component Image
55X
#1
#2
RFin
GND
Top View
#3
RFout
#3
#2
RFout
GND
#1
RFin
Applications
•
Wireless Data / WLAN
•
WiMAX / WiBRO
•
CATV & Cable modem
•
ISM
Bottom View
Notes:
Package marking provides orientation and identification
“55” = Device Code
“X” = Month of manufacture
Typical Biasing Configuration
Vcc
C
byp
C
byp
L
C
block
C
block
Pin 1
Input
Pin 3
Output
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 140 V
ESD Human Body Model = 1600 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
RFin
Pin 2
(Gnd)
RFout
Absolute Maximum Rating
(1)
T
A
= 25° C
Symbol
V
d, MAX
P
IN, MAX
P
DISS
T
OPT
T
J, MAX
T
STG
Thermal Resistance
Units
V
dBm
mW
°C
°C
°C
Parameter
Device Voltage
CW RF Input Power
Total Power Dissipation
(2)
Operating Temperature
Junction Temperature
Storage Temperature
Absolute Max.
5.5
18
550
-40 to 85
150
-65 to 150
Thermal Resistance
(3)
θ
jc
= 111° C/W
(I
d
= 75 mA, T
c
= 85° C)
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Ground lead temperature is 25° C. Derate 8.9
mW/° C for T
c
>108° C.
3. Thermal resistance measured using Infrared
measurement technique.
Electrical Specification
(1)
T
A
= 25° C, Zo = 50
Ω,
V
CC
= 5 V, P
in
= -15 dBm (unless specified otherwise)
Symbol
I
d
G
p
f
3dB
OIP3
(2)
S11
S22
S12
P1dB
NF
Parameter and Test Condition
Device Current
Power Gain
3 dB Bandwidth
Output 3
rd
Intercept Point
Input Return Loss, 50
Ω
source
Output Return Loss, 50
Ω
load
Reverse Isolation
Output Power at 1 dB Gain Compression
Noise Figure
Frequency
900 MHz
2000 MHz
900 MHz
2000 MHz
900 MHz
2000 MHz
900 MHz
2000 MHz
900 MHz
2000 MHz
900 MHz
2000 MHz
900 MHz
2000 MHz
Units
mA
dB
GHz
dBm
dB
dB
dB
dBm
dB
Min.
66
15.5
Typ.
75
18.8
17.2
2.5
35
32.5
-27
-19
-14
-10.7
-22.6
-22.7
20.6
19.5
4.1
4.3
Max.
86
18.5
30
Note :
1. Measurements obtained on CPWG line with reference plane at the ends of DUT leads (as shown in Figure 1).
2. OIP3 test condition: F
RF1
- F
RF2
= 10 MHz with input power of -15 dBm per tone measured at worse side band.
2
V
CC
RFin
Zo = 50 Ohm
Pin 3
Output
Pin 1
Input
Pin 2
GND
Bias Tee
Zo = 50 Ohm
RFout
Figure 1. Block diagram of board used for Id, Gain, OIP3, S11, S22, S12, OP1dB and NF measurements.
Circuit losses have been de-embedded from actual measurements.
Product Consistency Distribution Charts at 2 GHz, V
cc
= 5 V
LSL
USL
LSL
USL
68
72
76
80
84
16
17
18
Figure 2. I
d
(mA) distribution. LSL = 66, Nominal = 76, USL = 86.
Figure 3. Gain (dB) distribution. LSL = 15.5, Nominal = 17, USL = 18.5.
LSL
30
31
32
33
34
Figure 4. OIP3 (dBm) distribution. LSL = 30, Nominal = 32.2.
Notes:
1. Statistical distribution determined from a sample size of 9175 samples taken from 6 different wafers, measured on a production test board.
2. Future wafers allocated to this product may have typical values anywhere between the minimum and maximum specification limits.
3
AVT-55689 Typical Performance Curves
T
A
= 25° C, Zo = 50
Ω,
V
cc
= 5.0 V, P
in
= -15 dBm (unless specified otherwise)
22
20
18
Gain (dB)
16
14
12
10
0
1
2
Frequency (GHz)
3
4
Gain (dB)
4.5 V
5.0 V
5.5 V
22
20
18
16
14
12
10
0
1
2
Frequency (GHz)
3
4
25° C
85° C
-40° C
Figure 5. Gain vs. Frequency and Voltage
Figure 6. Gain vs. Frequency and Temperature
7.0
6.5
6.0
NF (dB)
5.5
5.0
4.5
4.0
3.5
3.0
0
1
2
Frequency (GHz)
3
4
4.5 V
5.0 V
5.5 V
NF (dB)
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
0
1
2
Frequency (GHz)
3
4
25° C
85° C
-40° C
Figure 7. Noise Figure vs. Frequency and Voltage
Figure 8. Noise Figure vs. Frequency and Temperature
24
22
20
P1dB (dBm)
18
16
14
12
10
0
1
2
Frequency (GHz)
3
4
4.5 V
5.0 V
5.5 V
P1dB (dBm)
24
22
20
18
16
14
12
10
0
1
2
Frequency (GHz)
3
4
25° C
85° C
-40° C
Figure 9. P1dB vs. Frequency and Voltage
Figure 10. P1dB vs. Frequency and Temperature
4
AVT-55689 Typical Performance Curves
T
A
= 25° C, Zo = 50
Ω,
V
cc
= 5.0 V, P
in
= -15 dBm (unless specified otherwise), continued
42
38
OIP3 (dBm)
34
30
26
22
4.5 V
5.0 V
5.5 V
OIP3 (dBm)
42
38
34
30
26
22
25° C
85° C
-40° C
0
1
2
Frequency (GHz)
3
4
0
1
2
Frequency (GHz)
3
4
Figure 11. OIP3 vs. Frequency and Voltage
Figure 12. OIP3 vs. Frequency and Temperature
140
120
100
I
d
(mA)
80
60
40
20
0
0
1
2
3
V
d
(V)
4
5
6
25° C
85° C
-40° C
S11 (dB)
0
-5
-10
-15
-20
-25
-30
-35
0
1
2
3
4
5
6
Frequency (GHz)
7
8
25° C
85° C
-40° C
9
10
Figure 13. I
d
vs V
d
and Temperature
Figure 14. S11 vs Frequency and Temperature
0
-5
S22 (dB)
-10
-15
-20
-25
0
1
2
3
4
5
6
Frequency (GHz)
7
8
25° C
85° C
-40° C
9
10
Figure 15. S22 vs Frequency and Temperature
5
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