TRANSISTOR 6 A, 100 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
参数名称 | 属性值 |
包装说明 | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code | unknow |
ECCN代码 | EAR99 |
外壳连接 | COLLECTOR |
最大集电极电流 (IC) | 6 A |
集电极-发射极最大电压 | 100 V |
配置 | SINGLE |
最小直流电流增益 (hFE) | 55 |
JESD-30 代码 | R-PSFM-T3 |
元件数量 | 1 |
端子数量 | 3 |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | FLANGE MOUNT |
极性/信道类型 | PNP |
认证状态 | Not Qualified |
表面贴装 | NO |
端子形式 | THROUGH-HOLE |
端子位置 | SINGLE |
晶体管应用 | AMPLIFIER |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 10 MHz |
Base Number Matches | 1 |
2SB686R | 2SB686O | 2SB686 | |
---|---|---|---|
描述 | TRANSISTOR 6 A, 100 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power | TRANSISTOR 6 A, 100 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power | TRANSISTOR 6 A, 100 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power |
Reach Compliance Code | unknow | unknow | unknow |
外壳连接 | COLLECTOR | COLLECTOR | COLLECTOR |
最大集电极电流 (IC) | 6 A | 6 A | 6 A |
集电极-发射极最大电压 | 100 V | 100 V | 100 V |
配置 | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 55 | 80 | 55 |
JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
元件数量 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
极性/信道类型 | PNP | PNP | PNP |
认证状态 | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | SINGLE | SINGLE | SINGLE |
晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER |
晶体管元件材料 | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 10 MHz | 10 MHz | 10 MHz |
Base Number Matches | 1 | 1 | 1 |
包装说明 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | - |
ECCN代码 | EAR99 | EAR99 | - |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved