ASMT-Mx00
Moonstone
TM
1 W Power LED Light Source
Data Sheet
Description
The Moonstone
TM
1W Power LED Light Source is a high
performance energy efficient device which can handle
high thermal and high driving current. The exposed pad
design has excellent heat transfer from the package to
the motherboard.
The low profile package design is suitable for a wide
variety of applications especially where height is a
constraint.
The package is compatible with reflow soldering
process. This will give more freedom and flexibility to
the light source designer.
Features
Available in Red, Amber, Green, and Blue color.
Energy efficient
Exposed pad for excellent heat transfer
Suitable for reflow soldering process
High current operation
Long operation life
Wide viewing angle
Silicone encapsulation
ESD Class HBM Class 3B (threshold > 8 kV)
MSL 2A for InGaN products
MSL 4 for AlInGaP products
Applications
Portable (flash light, bicycle head light)
Reading light
Architectural lighting
Garden lighting
Decorative lighting
Specifications
AllnGaP technology for Red and Amber
2.1V (typ) at 350mA for AllnGaP
InGaN technology for Green and Blue
3.2V (typ) at 350mA for InGaN
Package Dimensions
10.00
1
Anode
2 Cathode
3
Heat Sink
3.30
8.50
Metal Slug
3
Ø 5.26
10.60
8.50
Ø 8.00
1.27
LED
+
−
ZENER
2.00
1.30
1
5.08
2
0.81
5.25
Notes:
1. All dimensions are in millimeters.
2. Tolerance is ±0.1 mm unless otherwise specified.
3. Metal slug is connected to anode for electrically non-isolated option.
Device Selection Guide ( T
j
= 25°C)
Luminous Flux,
V[1,2]
(lm)
Part Number
ASMT-MR00-AGH00
ASMT-MR00-AHJ00
ASMT-MA00-AGH00
ASMT-MG00
ASMT-MB00
Amber
Green
Blue
Color
Red
Min.
25.5
33.0
25.5
43.0
11.5
Typ.
35.0
40.0
35.0
60.0
15.0
Max.
43.0
56.0
43.0
73.0
25.5
Test Current
(mA)
350
350
350
350
350
Dice
Technology
AlInGaP
AlInGaP
AlInGaP
InGaN
InGaN
Notes
1.
V
is the total luminous flux output as measured with an integrating sphere at 25 ms mono pulse condition.
2. Flux tolerance is ± 10%.
2
Part Numbering System
ASMT-M x xx – x x
1
x
2
x
3
x
4
Packaging Option
Color Bin Selection
Maximum Flux Bin Selection
Minimum Flux Bin Selection
Dice Type
N – InGaN
A – AllnGaP
Silicone Type
00 – Non-diffused
B1 – Diffused
Color
R – Red
A – Amber
G - Green
B - Blue
Note:
1. Please refer to Page 8 for selection details.
Absolute Maximum Ratings (T
A
= 25°C)
Parameter
DC Forward Current
[1]
Peak Pulsing Current
[2]
Power Dissipation for AllnGaP
Power Dissipation for InGaN
LED Junction Temperature for AllnGaP
LED Junction Temperature for InGaN
Operating Ambient Temperature Range
Storage Temperature Range
Reverse Volttage
[3]
ASMT-Mx00/
350
1000
805
1225
125
110
-40 to +100
-40 to +120
Not recommended
Units
mA
mA
mW
mW
°C
°C
°C
°C
Notes:
1. DC forward current – derate linearly based on Figure 5 for AlInGaP & Figure 11 for InGaN.
2. Pulse condition duty factor = 10%, Frequency = 1kHz.
3. Not recommended for reverse bias operation.
3
Optical Characteristics at 350 mA (TJ = 25°C)
Peak Wavelength,
λ
PEAK
(nm)
Part Number
ASMT-MR00-AGH00
ASMT-MR00-AHJ00
ASMT-MA00-AGH00
ASMT-MG00
ASMT-MB00
Dominant Wave-
length, λ
D [1]
(nm)
Typ
625
625
590
525
460
Viewing Angle,
2θ½
[2]
(°)
Typ
120
120
120
120
120
Luminous Efficiency
(lm/W)
Typ
48
54
48
54
13
Color
Red
Red
Amber
Green
Blue
Typ
635
635
598
519
454
Electrical Characteristic at 350 mA (T
J
= 25°C)
Forward Voltage V
F
(Volts) at I
F
= 350mA
Dice type
AllnGaP
InGaN
Thermal Resistance
Rθ j-ms ( °C/W)
[1]
Typ.
12
10
Min.
1.7
2.8
Typ.
2.1
3.2
Max.
2.3
3.5
Notes:
1. Rθ j-ms is Thermal Resistance from LED junction to metal slug.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
380
RED
AMBER
FORWARD CURRENT - mA
430
480
530
580
630
WAVELENGTH - nm
680
730
780
500
450
400
350
300
250
200
150
100
50
0
0
0.5
1
1.5
2
FORWARD VOLTAGE - V
2.5
3
Figure 1. Relative Intensity vs. Wavelength for AlInGaP
1.4
RELATIVE LUMINOUS FLUX (v) - lm
1.2
RELATIVE INTENSITY
Figure 2. Forward Current vs Forward Voltage for AlInGaP
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-90
0.8
0.6
0.4
0.2
0.0
0
50
100
150 200 250 300 350 400
MONO PULSE CURRENT - mA
450 500
RELATIVE INTENSITY
1.0
-70
-50
-30
-10
10
30
OFF-AXIS ANGLE(°)
50
70
90
Figure 3. Relative Luminous Flux vs. Mono Pulse Current for AlInGaP
4
Figure 4. Radiation Pattern for AlInGaP
400
I
F
- MAX FORWARD CURRENT - mA
350
300
250
200
150
100
50
0
0
10
20
30
40
50
60
T
A
- AMBIENT TEMPERATURE - °C
70
80
90
R
JA
= 60°C/W
R
JA
= 50°C/W
R
JA
= 40°C/W
2
RELATIVE LOP (Normalized at 25°C)
RED
AMBER
1.5
1
0.5
0
-40 -25 -10
5
20 35 50 65 80
JUNCTION TEMPERATURE - °C
95 110 125
Figure 5. Maximum forward current vs. ambient temperature for AlInGaP
Derated based on T
J
MAX = 125°C, Rθ
JA
= 40°C/W / 50°C/W and 60°C/W
Figure 6. Relative LOP (Normalized at 25°C) vs. junction temperature for
AlInGaP
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
380
GREEN
BLUE
FORWARD CURRENT - mA
430
480
530
580
630
WAVELENGTH - nm
680
730
780
500
450
400
350
300
250
200
150
100
50
0
0
0.5
1
1.5
2
2.5
FORWARD VOLTAGE - V
3
3.5
4
RELATIVE INTENSITY
Figure 7. Relative Intensity vs. Wavelength for InGaN
Figure 8. Forward Current vs. Forward Voltage for InGaN
1.4
RELATIVE LUMINOUS FLUX (φV) - lm
1.2
RELATIVE INTENSITY
1.0
0.8
0.6
0.4
0.2
0.0
0
50
100 150 200 250 300 350 400 450 500
MONO PULSE CURRENT - mA
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-90
GREEN
BLUE
-70
-50
-30
-10 10
30
OFF-AXIS ANGLE (°)
50
70
90
Figure 9. Relative Luminous Flux vs Mono Pulse Current for InGaN
Figure 10. Radiation Pattern for InGaN
5
Microchip MCU
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