MGA-30316
3.3 -3.9GHz
½ Watt High Linearity Amplifier
Data Sheet
Description
Avago Technologies’ MGA-30316 is a high linearity ½ Watt
PA with good OIP3 performance and exceptionally good
PAE at p1dB gain compression point, achieved through
the use of Avago Technologies’ proprietary 0.25um GaAs
Enhancement-mode pHEMT process.
The device required simple matching components to
achieve wide bandwidth performance since it has a built
in input prematch.
The adjustable temperature compensated internal bias
circuit allowed the device to be operated at either class A
or class AB operation
The MGA-30316 is housed inside a standard 16 pin QFN
3X3 package.
Features
High linearity and P1dB
Unconditionally Stable across load condition
Built in adjustable temperature compensated internal
bias circuitry
With prematch - required simple matching
GaAs E-pHEMT Technology
[1]
Standard QFN 3X3 package
5V supply
Excellent uniformity in product specifications
Tape-and-Reel packaging option available
MSL-1 and Lead-free
High MTTF for base station application
Applications
Class A driver amplifier for WiMAX Base Stations.
General purpose gain block.
Specifications
3.5GHz; 5V, 198mA (typ)
12.8 dB Gain
44.4 dBm Output IP3
28.5 dBm Output Power at 1dB gain compression
51.3% PAE at P1dB
2.7 dB Noise Figure
Component Image
RFgnd 16
16 pins QFN 3x3
GND 14
NC 13
NC 12
VDD/RFout 11
VDD/RFout 10
NC 9
8 NC
NC 15
30316
YYWW
XXXX
1 Vm
GND
2 Vbias
3 RF in
4 NC
Notes:
1. Enhancement mode technology employs positive gate voltage,
thereby eliminating the need of negative gate voltage associated
with conventional depletion mode devices.
TOP VIEW
BOTTOM VIEW
Notes:
Package marking provides orientation and identification
“30316” = Device Part Number
“YYWW” = Year and Work Week of manufacture
“XXXX” = Last 4 digit of Lot number
7 GND
6 NC
5 NC
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 70 V
ESD Human Body Model = 250 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Absolute Maximum Rating
[1]
T
A
=25
C
Symbol
V
dd,max
I
ds,max
V
ctrl,max
P
in,max
P
diss
T
j, max
T
STG
Parameter
Device Voltage, RF output to ground
Device Drain Current
Control Voltage
CW RF Input Power
Total Power Dissipation
[2]
Junction Temperature
Storage Temperature
Units
V
mA
V
dBm
W
C
C
Absolute Max.
5.5
400
5.5
22
2.2
150
-65 to 150
Thermal Resistance
[3]
θ
jc
= 37
C/W
(Vdd=5, Ids=200mA, Tc=85ºC)
Notes:
1. Operation of this device in excess of any of these limits may cause permanent damage.
2. This is limited by maximum Vdd and Ids. Derate 27mW/
o
C for Tc > 68.6
o
C.
3. Thermal resistance measured using Infra-Red measurement technique.
Electrical Specifications
[4]
T
A
= 25
C,
Vdd =5V, Vctrl =5V, RF performance at 3.5 GHz, measured on demo board (see Fig.7) unless otherwise speci-
fied.
Symbol
Ids
Ictrl
Gain
OIP3
[5]
OP1dB
PAE
NF
S11
S22
S12
Parameter and Test Condition
Quiescent current
Vctrl current
Gain
Output Third Order Intercept Point
Output Power at 1dB Gain Compression
Power Added Efficiency
Noise Figure
Input Return Loss, 50Ω source
Output Return Loss, 50Ω load
Reverse Isolation
Units
mA
mA
dB
dBm
dBm
%
dB
dB
dB
dB
Min.
155
-
11
40
27
-
-
-
-
-
Typ.
198
7
12.8
44.4
28.5
51.3
2.7
-10
-8.5
-27
Max.
250
-
14
-
-
-
-
-
-
-
Notes:
4. Measurements at 3.5GHz obtained using demo board described in Figure 6 and 7.
5. 3.5GHz OIP3 test condition: F
RF1
- F
RF2
= 10MHz with input power of -5dBm per tone measured at worse side band
6. Use proper bias, heat sink and de-rating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and
application note (if applicable) for more details.
2
Product Consistency Distribution Charts
[1, 2]
CPK = 1.25,
Stdev = 11.4
CPK = 3.38
Stdev = 0.44
Figure 1. Ids at 3.5GHz; LSL=155mA, nominal =198mA, USL=250mA
Figure 2. OIP3 at 3.5GHz; LSL=40dBm, nominal=44.4dBm
CPK = 5.68
Stdev = 0.087
Stdev = 0.56
Figure 3. P1dB at 3.5GHz; LSL=27dBm, nominal =28.5dBm
Figure 4. PAE@P1dB 3.5GHz; nominal=51.3%
CPK = 2.34
Stdev = 0.17
Figure 5. Gain at 3.5GHz; LSL=11dB, nominal =12.8dB, USL=14dB
Notes:
1. Distribution data sample size is 500 samples taken from 3 different wafer lots and 3 different wafers. Future wafers allocated to this product may
have nominal values anywhere between the upper and lower limits.
2. Measurements were made on a characterization test board, which represents a trade-off between optimal OIP3, gain, P1dB and PAE. Circuit trace
losses have not been de-embedded from measurements above.
3
S-Parameter (Vdd=5V, Vctrl=5V, T=25C, unmatched 50 ohm)
Freq (GHz)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5
5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
5.9
6
S11 (dB)
-6.82
-4.78
-4.18
-3.47
-2.93
-2.63
-2.41
-2.23
-2.15
-2.15
-2.11
-2.13
-2.2
-2.23
-2.47
-2.49
-2.6
-2.77
-2.99
-3.21
-3.39
-3.61
-3.8
-4.05
-4.33
-4.65
-5.05
-5.54
-6.12
-6.9
-7.88
-9.23
-11.19
-14.22
-19.94
-30.95
-17.87
-12.15
-8.81
-6.56
-4.98
-3.84
-3
-2.39
-1.96
-1.61
-1.35
-1.18
-1.02
-0.89
-0.85
-0.79
-0.73
-0.75
-0.75
-0.75
-0.82
-0.89
-0.91
-1.03
S11 (ang)
-151.29
-159.01
-166.18
-169.93
-173.8
-177.69
178.2
174.29
170.69
167.04
163.4
159.95
156.03
152.09
147.67
144.86
140.23
135.94
131.36
127.11
122.76
117.96
112.9
107.72
102.21
96.41
90.74
84.58
78.29
71.89
64.98
57.3
49.31
39.62
23.89
-79.21
-146.45
-160.58
-171.12
179.84
172.2
165.23
159.18
154.5
150.27
146.62
144.08
141.63
139.62
138.34
137.14
135.92
135.3
134.69
133.99
133.62
133.4
133.12
132.85
132.62
S21 (dB)
27.03
25.15
23.78
22.65
21.61
20.68
19.59
18.64
17.86
17.01
16.34
15.76
15.16
14.67
14.12
13.79
13.35
13.05
12.76
12.63
12.59
12.48
12.38
12.31
12.23
12.13
12.1
12.05
11.99
11.96
11.94
11.9
11.87
11.8
11.64
11.42
11.09
10.57
9.93
9.17
8.22
7.21
6.2
5.09
3.98
2.94
1.88
0.81
-0.15
-1.07
-2.07
-2.89
-3.7
-4.59
-5.33
-6
-6.76
-7.43
-8.01
-8.69
S21 (ang)
150.46
138.28
133.19
123.43
114.31
107.63
101.05
95.04
90.54
86.49
82.19
78.67
75.31
71.57
68.05
65.62
62.35
59.69
57.06
54.39
50.88
47.2
43.05
38.81
34.51
30.05
25.39
20.47
15.42
10.03
4.22
-1.9
-8.49
-15.78
-23.57
-31.82
-40.52
-49.43
-58.26
-66.62
-74.31
-81.56
-87.81
-93.09
-97.98
-102.25
-105.53
-108.81
-111.55
-113.65
-115.8
-117.73
-119.18
-120.78
-122.15
-123.2
-124.42
-125.61
-126.69
-127.93
S12 (dB)
-47.73
-41.95
-39.08
-37.52
-36.49
-35.95
-35.67
-35.37
-35.16
-35.02
-34.8
-34.6
-34.49
-34.32
-34.1
-33.46
-33.36
-33.04
-32.49
-31.8
-31.25
-30.93
-30.67
-30.34
-30.09
-29.85
-29.57
-29.32
-29.08
-28.83
-28.58
-28.45
-28.27
-28.12
-28.13
-28.22
-28.41
-28.82
-29.39
-30.07
-30.96
-31.96
-32.99
-34.14
-35.29
-36.42
-37.68
-38.92
-40.15
-41.37
-42.75
-44.04
-45.5
-47.13
-49.38
-50.75
-51.1
-51.76
-51.77
-52.06
S12 (ang)
71.5
64.79
55.33
46.92
38.95
33.44
29.42
26.01
23.86
22.13
20.22
19.29
18.58
17.24
20.11
15.95
14.77
15.06
15.09
12.77
8.84
5.55
1.89
-1.84
-4.96
-8.75
-12.78
-16.64
-21.03
-25.96
-31.04
-36.51
-42.81
-49.57
-56.85
-64.96
-73.3
-81.96
-90.63
-98.94
-106.74
-114.42
-121.08
-126.93
-132.83
-138.03
-143.09
-148.09
-153.01
-157.93
-163.22
-169.68
-176.84
174.68
167.69
167.52
157.54
147.91
135.29
122.98
S22 (dB)
-12.25
-8.27
-5.81
-4.38
-3.55
-3.15
-3.05
-2.97
-2.97
-3.08
-3.11
-3.2
-3.34
-3.42
-3.61
-3.69
-3.81
-3.93
-4.03
-3.97
-3.86
-3.88
-3.95
-3.95
-4.03
-4.11
-4.11
-4.17
-4.25
-4.25
-4.24
-4.26
-4.18
-4.05
-3.92
-3.72
-3.45
-3.21
-2.96
-2.73
-2.59
-2.48
-2.36
-2.33
-2.3
-2.27
-2.27
-2.29
-2.29
-2.29
-2.33
-2.34
-2.36
-2.41
-2.47
-2.48
-2.51
-2.53
-2.56
-2.61
S22 (ang)
-128.58
-130.03
-135.8
-143.58
-150.15
-155.24
-159.58
-162.74
-164.72
-166.58
-167.95
-168.64
-169.5
-170.22
-170.41
-170.18
-170.43
-169.7
-168.68
-168.24
-168.39
-168.52
-169.12
-169.52
-169.49
-169.94
-170.25
-170.13
-170.45
-170.58
-170.44
-170.23
-170.28
-170.11
-169.91
-170.28
-170.74
-171.49
-172.77
-174.21
-175.63
-177.43
-178.93
-179.99
178.66
177.63
177.01
176.27
175.63
175.36
175.03
174.63
174.49
174.31
174.11
174.1
174.03
173.71
173.44
173.08
4
S-Parameter Test circuit
Vctr =5V
Vdd =No Connect
C10
=10pF
C6
=NU
L4=NU
C7
C8
C9
GND
15
Vg
16
14
RFgnd
NC
13
Rbias
=0 ohm
L3=NU
NC
12
Vdd
RFout
11
Vdd
RFout
10
NC
9
C3
=NU
C5
=NU
R4
= 0 Ohm
C11
= 0 Ohm
RFout
Bias Tee, 5V
Vm
1
Vbias
2
C1=0 Ohm
RFin
L1
=NU
C2
=NU
RFin
3
NC
4
N`C
GND
NC
NC
5
6
7
Reference Plane
NU = Not Used
Reference Plane
Top View
5
8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
