MGA-16116
Dual LNA for Balanced Application 450 – 1450 MHz
Data Sheet
Description
Avago Technologies’ MGA-16116 is an ultra low-noise
high linearity amplifier pair with built-in active bias and
shutdown features for balanced applications in the 900
MHz band. Shutdown functionality is achieved using a
single DC voltage input pin.High linearity is achieved
through the use of Avago Technologies’ proprietary GaAs
Enhancement-mode pHEMT process
[1]
. It is housed in a
miniature 4.0 x 4.0 x 0.85 mm 16-pin Quad Flat No-lead
(QFN). The compact footprint coupled with ultra low noise
and high linearity makes MGA-16116 an ideal choice for
basestation transmitters and receivers.
For applications > 1450 MHz, it is recommended to use
MGA-16216 1440-2350 MHz or MGA-16316 1950-4000
MHz. All 3 products share the same package and pin out
configuration.
Features
•
Ultra Low Noise Figure
•
Variable Bias and Shutdown functionality
•
High IIP3: +19 dBm typ.
•
GaAs E-pHEMT Technology
[1]
•
Small package size: 4.0 x 4.0 x 0.85 mm
3
•
RoHS and MSL1 compliant.
Typical Performances
900 MHz @ 4.8 V, 60.9 mA (typ per amplifier)
•
Gain: 18.4 dB
•
NF: 0.27 dB
[2]
•
IIP3: 19.1 dBm
•
P1dB: 21.2 dBm
•
Shutdown voltage Vsd range > 1.6 V
•
Total shutdown current (Vsd1, Vsd2 = 3 V): 1.84 mA
Component Image
4.0 x 4.0 x 0.85 mm
3
16-Lead QFN
AVAGO
16116
YYWW
XXXX
Note:
Package marking provides orientation and
identification
“16116 “ = Device Code
“YYWW” = Date Code identifies year and
work week of manufacturing
“XXXX” = Last 4 digit of assembly lot
number
Applications
•
Basestation receivers and transmitters in balanced
configuration.
•
Ultra low-noise RF amplifiers.
Notes:
1. Enhancement mode technology employs positive Vgs, thereby
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
2. Measured at RFin pin of packaged part, other losses deembedded.
3. Good RF practice requires all unused pins to be grounded.
Pin Configuration
Pin 16
Pin 15
Pin 14
Pin 13
Pin Use
1 RFIN1
2 GND
3 GND
4 RFIN2
6 Vsd2
7 Bias_in2
Pin Use
10 GND
11 GND
12 RFOUT1
13 Not used
15 Vsd1
16 Bias_out1
– –
Pin 1
Pin 2
Pin 3
Pin 4
Pin 5
Pin 6
Pin 7
Pin 8
Pin 17
Pin 12
Pin 11
Pin 10
Pin 9
5 Bias_out2 14 Bias_in1
8 Not used 17 GND
9 RFOUT2
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 60 V
ESD Human Body Model = 300 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
VIEW FROM THE TOP
Absolute Maximum Rating
[1]
T
A
= 25° C
Symbol
V
dd
Idd
Vsd
P
in
P
in
P
d
T
j
T
stg
Thermal Resistance
[3]
Units
V
mA
V
dBm
dBm
mW
°C
°C
Parameter
Drain Voltage, RF output to ground
Drain Current
Shutdown Voltage
CW RF Input Power with LNA On
CW RF Input Power with LNA Off
Power Dissipation
Junction Temperature
Storage Temperature
Absolute Maximum
5.5
100
5.5
27
27
550
150
-65 to 150
(Vd = 4.8 V, Idd = 53 mA, T
c
=100° C)
q
jc
= 58.6°C/W
Notes:
1. Operation of this device is excess of any
of these limits may cause permanent
damage.
2. Source lead temperature is 25° C. Derate
17 mW/°C for Tc > 118° C.
3. Thermal resistance measured using 150° C
Infra-Red Microscopy Technique.
Electrical Specifications
T
A
= 25° C, Vdd1 = Vdd2 = 4.8 V, Vsd1 = Vsd2 = 0 V at Rbias = 1.5 kohm, RF performance at 900 MHz, CW operation unless
otherwise stated.
Symbol
Vdd
Idd
Gain
NF
[1]
OP1dB
IIP3
[2]
S11
S22
S12
S31
Vsd1,2
[3]
Vsd1,2
[3]
Idq
[4]
Isd
[4]
Ibias
[4]
Parameter and Test Condition
Supply Voltage
Total Supply Current per amplifier (Idq+Ibias)
Gain
Noise Figure
Output Power at 1dB Gain Compression
Input Third Order Intercept Point
Input Return Loss, 50
Ω
source
Output Return Loss, 50
Ω
load
Reverse Isolation
Isolation between RFin1 and RFin2
Maximum shutdown voltage required to turn ON LNA
Minimum shutdown voltage required to turn OFF LNA
Current at Vdd with Vsd = 0 V
Current at Vdd with Vsd = 3 V
Current at Vsd with Vsd = 0 V
Current at Vsd with Vsd = 3 V
Current at Vbias with Vsd = 0 V
Current at Vbias with Vsd = 3 V
Units
V
mA
dB
dB
dBm
dBm
dB
dB
dB
dB
V
V
mA
mA
mA
mA
mA
mA
Min.
48
17.2
Typ.
4.8
60.9
18.4
0.27
21.2
Max.
72
19.4
0.45
17
19.1
-10.9
-17.5
-22.4
-36.8
0.5
1.6
58.6
0.01
4
220
2.3
1.61
Notes:
1. Noise figure at the DUT RF Input pin, board losses are deembedded.
2. IIP3 test condition: FRF1-FRF2 = 1 MHz with input power of -20 dBm per tone.
3. Vsd1 and Vsd2 are active LOW.
4. Refer to Figure 6 for more details.
2
Product Consistency Distribution Charts
LSL
USL
USL
45
50
55
60
65
70
75
0
0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6
Figure 1. Idd, LSL = 48 mA , nominal = 60.9 mA, USL = 72 mA
Figure 2. NF, nominal = 0.27 dB, USL = 0.45 dB
LSL
LSL
USL
16
17
18
19
20
21
22
23
24
16.9
17.2
17.5
17.8 18 18.2
18.5
18.8 19 19.2
19.5
Figure 3. IIP3, LSL = 17 dBm, nominal = 19.1 dBm
Figure 4. Gain, LSL = 17.2 dB, nominal = 18.4 dB, USL = 19.4 dB
Notes:
1. Distribution data sample size is 6500 samples taken from 12 different wafer lots. Future wafers allocated to this product may have nominal values
anywhere between the upper and lower limits.
2. Circuit trace losses for NF have been de-embedded from measurements above.
3
Demo Board Layout
Vsd2
Vdd1
Vsd1
Vdd2
APRIL 2011
R10
C24
C25
C8
R4
C9
C19
R7
C22
Demo Board Schematic
R9
C20
C6
C2
R1
C1
L1
C23
R3
C7
L3
RFIN
C3
C16
RFOUT
L2
C12
R6
C13
L4
C21
R8
C26
MGA-16X16
Demoboard
(4-Port)
Rev 1
RO4350
DK 3.48
H 10mil
W 0.58mm
G 0.45mm
Figure 6. Demo Board Schematic Diagram
Figure 5. Demo Board Layout Diagram
Notes:
1. Recommended PCB material is 10 mils Rogers RO4350.
2. Suggested component values may vary according to layout and PCB material.
3. Input board loss at 900 MHz is 0.056 dB
4. The schematic is shown with the assumption that similar PCB is used for all MGA-16116, MGA-16216 and MGA-16316.
5. Detail of the components needed for this product is shown in Table 1.
6. R1 and R6 are for low frequency stability.
7. Bias to each LNA is adjustable using R3 and R8 (see Figure 6). Increasing R3 and R8 will reduce bias current (Idd) and vice-versa.
8. R9/R10 are stability improvement resistors that may not be needed in actual application. They are included in the demoboard to provide isolation
from power supply noise.
9. Center Paddle is grounded.
Table 1. Component list for 900 MHz matching
PART
C1, C12
C2, C13, C8, C22
C3, C9, C16, C19
C6, C20, C23, C34
C7, C21
C25, C26
L1, L2
L3, L4
R1, R6
R3, R8
R4, R7
R9, R10
Size
0402
0402
0402
0805
0402
0402
0402
0402
0402
0402
0402
0402
Value
20 pF
0.1
mF
100 pF
4.7
mF
12 pF
NOT USED
68 nH
120 nH
51 ohm
1.5 kohm
0 ohm
10 ohm
Detail Part Number
GJM1555C1H200GB01
GRM155R71C104KA88D
GRM1555C1H101JD01E
GRM21BR60J475KA11L
GJM1555C1H120GB01
–
LQW15AN68NG00
LQW15ANR12J00
RK73B1ETTP510J
RK73B1ELTP152J
RK73B1ETTP0R0J
RK73B1ETTP100J
4
Table 2. Below is the table showing the MGA-16116 Reflection Coefficient Parameters tuned for Maximum OIP3, Vdd = 4.8 V,
Idd = 35 mA per amplifier. Input gamma is tuned for Fmin. The reflection coefficients are for single amplifier.
Gamma Load Position
Frequency (MHz)
450
700
835
950
1450
Magnitude
0.51
0.643
0.643
0.386
0.514
Angle
44.1
34.9
46.5
40.0
86.4
IIP3 (dBm)
17.38
22.09
25.18
23.20
25.77
Gain (dB)
20.02
16.8
15.1
16.62
14.39
Table 3. Below is the table showing the MGA-16116 Reflection Coefficient Parameters tuned for Maximum OIP3, Vdd = 4.8 V,
Idd = 60 mA per amplifier. Input gamma is tuned for Fmin. The reflection coefficients are for single amplifier.
Gamma Load Position
Frequency (MHz)
450
700
835
950
1450
Magnitude
0.514
0.39
0.515
0.386
0.643
Angle
43.2
40.5
57.6
20.0
92.9
IIP3 (dBm)
21.32
23.15
26.90
26.71
29.83
Gain (dB)
20.34
18.6
16.1
16.31
13.98
Table 4. Below is the table showing the MGA-16116 Reflection Coefficient Parameters tuned for Maximum OIP3, Vdd = 4.8 V,
Idd = 75 mA per amplifier. Input gamma is tuned for Fmin. The reflection coefficients are for single amplifier.
Gamma Load Position
Frequency (MHz)
450
700
835
950
1450
Magnitude
0.128
0.257
0.257
0.128
0.257
Angle
59.8
30.1
149.9
180
29.9
IIP3 (dBm)
21.07
24.33
23.80
24.74
28.73
Gain (dB)
22.75
19.16
18.46
17.98
15.03
Notes:
1. IIP3 test condition: FRF1-FRF2 = 1 MHz with input power of -20 dBm per tone.
2. Idd can be obtained by varying the Vg1/Vg2. Refer to figure 7.
Notes:
1. Maximum OIP3 is measured on coplanar waveguide made on 0.010
inch thick ROGER 4350.
Figure 7. RFinput and RFoutput Reference Plane
5
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