an
=y
AMPFE
comDanv
RF MOSFET Power
100 - 500 MHz
Features
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
Common Source Configuration
Lower Noise Floor
. .
Transistor,
4OW, 28V
UF284OP
Absolute Maximum Ratings at 25°C
Parameter
Symbol
Rating
Units
i
D
i
627
i
6.33
1
247
1
257
1
H
J
]
1
1.40
292
1
I
165
3.M
1
I
055
115
1
I
.D65
325
Electrical Characteristics
at 25°C
input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Load Mismatch Tolerance
* Per Side
C ISS
C oss
C
RSS
GP
qD
-
)
45
30
a
pF
pF
PF
dB
%
-
Vg28.0
V,,=28.0
V,,=28.0
V,,=28.0
V,,=28.0
V,,=28.0
V, F=l .O MHz’
V, F=l .O MHz’
V, F=l .O MHz’
V, 1,,=500.0 mA, P,fi40.0
V, 1,,=500.0 mA, Po,,=40.0
V, 1,,=500.0
mA, P,,g40.0
W. F=500 MHz
W, F=500 MHz
W, F=500 MHz
10
50
-
-
-
2O:l
VSWR-T
Specifications Subject
to
Change Without Notice.
MIA-COM,
North
America:
Tel.
(800)
366-2266
n
Inc.
Asia/Pacific:
Tel.
+81 (03) 3226-1671
n
Europe:
Fax (800) 618-8883
Fax +81 (03)3226-1451
Tel. +44 (1344)869 595
Fax +44(1344)300 020
RF MOSFET Power Transistor,
4OW, 28V
U F284OP
v2.00
Typical Broadband
Performance
Curves
CAPACITANCES
40
vs VOLTAGE
50
POWER OUTPUT vs VOLTAGE
P,,=3.0 W I,,=500
mA F=500 MHz
Fz1.0 MHz
g
f
L
2
5
10
55
4o
30
20
E
C
RSS
10
/
0
15
"2, (")
20
25
30
5
10
15
20
25
30
35
5
10
v,, (“)
GAIN vs FREQUENCY
30
v.,,=28
EFFICIENCY
65
-
vs FREQUENCY
mA P,,,=40
W
V I,,=500
mA PO,,=40 W
V,,=28
V I,,=500
6
c
kii
55.
c
J
100
200
3w
400
500
50
.
loo
200
3430
400
500
FREQUENCY
(MHz)
FREQUENCY
(MHz)
POWER OUTPUT
60
vs POWER INPUT
mA
VD,=28 V I,,=500
1
J
0.1
0.25
1
2
2.5
POWER INPUT (W)
Specifications
Subject to Change Without Notice.
M/A-COM,
inc.
Tel. (800)
Fax (800)
366-2266
618-8883
n
North America:
Asia/Pacific:
Tel.
Fax
+81 (03) 3226-1671
+81 (03) 3226-1451
w
Europe:
Tel.
Fax
+44 (1344)
+44 (1344)
869 595
300 020
RF MOSFET Power Transistor,
4OW, 28V
UF284OP
v2.00
Typical Device Impedance
Frequency
100
300
500
(MHz)
4, (OHMS)
6.0 - j 20.0
2.5 - j 5.5
4.0 + j 3.0
V,,=28
V,
I,,=500
mA,
P,,,=40.0
Watts
Z LOAD
(OHMS)
25.0 + j 27.0
13.0 + j 13.0
12.0 + j 5.0
Z,, is
the series equivalent
‘. T
input impedance
of the device from gate to
gate.
as measured from drain to drain.
Z
LcAD the optimum series equivalent
is
load impedance
RF Test Fixture
PARTS
c3s
c6
2 7.
2 12 13
c7, 9,
10
It 14,
1s
a9
a6
22
22’
L
I
ST
WpF
UJJ PC
la
Pf
470 pf
815
uf
:
10 uf
Louf
Lu 14
Ll2 13
L7, lo
28”
L4
u2
0
SOUfSOV.
lOOW42SV.
270 tl+f ZS
V.
2.wlF25oNNsmr-RmDco~
7 TlRdS 5 NO. e2 AVG VIRE
lsTum5ra22AvGvw
x5* ff so m-04 l%NSUSSION UNE
Es’ffsomMTR-uNE
~ff5OpUTRAND(Issar(LIK
35’~50U+MTRCIE(OOSSWLlX
.SVFSOOTR-UN
uf2e4oP
Specifications Subject to Change Without Notice.
MIA-COM,
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
m Asia/Pacific:
Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
n
Inc.
Europe:
Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
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