MGA-30889
40MHz - 2600MHz
Flat Gain High Linearity Gain Block
Data Sheet
Description
Avago Technologies’ MGA-30889 is a broadband, flat gain,
high linearity gain block MMIC amplifier achieved through
the use of Avago Technologies’ proprietary 0.25um GaAs
Enhancement-mode pHEMT process.
The device required simple dc biasing components to
achieve wide bandwidth performance. The temperature
compensated internal bias circuit provides stable current
over temperature and process threshold voltage
variation.
The MGA-30889 is housed inside a low cost RoHS
compliant SOT89 industry standard SMT package (4.5 x
4.1 x 1.5 mm).
Features
•
Flat Gain 15dB +/-0.25dB, 40MHz to 2600MHz
•
High linearity
•
Built in temperature compensated internal bias circuitry
•
No RF matching components required
•
GaAs E-pHEMT Technology
[1]
•
Standard SOT89 package
•
Single, Fixed 5V supply
•
Excellent uniformity in product specifications
•
MSL-2 and Lead-free halogen free
•
High MTTF for base station application
Component Image
Specifications
900MHz; 5V, 65mA (typical)
•
15.5 dB Gain
8GX
#1
#2
RFin
GND
Top View
#3
RFout
#3
#2
RFout
GND
#1
RFin
•
38 dBm Output IP3
•
1.9 dB Noise Figure
•
20 dBm Output Power at 1dB gain compression
1950MHz, 5V, 65mA (typical)
•
15.7 dB Gain
•
36 dBm Output IP3
•
2 dB Noise Figure
•
20.3 dBm Output Power at 1dB gain compression
Bottom View
Notes:
Package marking provides orientation and identification
“8G”= Device Code
“X” = Month of Manufacture
Applications
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 50 V
ESD Human Body Model = 400 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
•
IF amplifier, RF driver amplifier
•
General purpose gain block
Note:
1. Enhancement mode technology employs positive gate voltage,
thereby eliminating the need of negative gate voltage associated
with conventional depletion mode devices.
Absolute Maximum Rating
[1]
T
A
=25°C
Symbol
V
dd,max
P
in,max
P
diss
T
j,MAX
T
STG
Thermal Resistance
Units
V
dBm
W
°C
°C
Parameter
Device Voltage, RF output to ground
CW RF Input Power
Total Power Dissipation
[3]
Junction Temperature
Storage Temperature
Absolute Max.
5.5
20
0.47
150
-65 to 150
Thermal Resistance
[2]
θ
JC
= 76°C/W
(Vdd = 5 V, Ids = 57.5 mA, Tc = 85°C)
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using Infrared
measurement technique.
3. This is limited by maximum Vdd and Ids.
Derate 13.2 mW/°C for Tc >114°C.
Product Consistency Distribution Charts
[1, 2]
LSL
USL
LSL
USL
60
70
14.5
15
15.5
16
16.5
Figure 1. Ids, LSL=53mA , nominal=65mA, USL=77mA
Figure 2. Gain, LSL=14.6dB, nominal=15.7dB, USL=16.8dB
LSL
LSL
33
34
35
36
37
38
39
19.2
19.6
20
20.4
20.8
Figure 3. OIP3, LSL=33dBm, nominal=36dBm
USL
Figure 4. P1dB, LSL=19.2dBm, nominal=20.3dBm
Notes:
1. Distribution data sample size is 3000 samples taken from 3 different
wafer lots. Future wafers allocated to this product may have nominal
values anywhere between the upper and lower limits.
2. Measurements were made on a characterization test board, which
represents a trade-off between optimal OIP3, gain and P1dB. Circuit
trace losses have not been de-embedded from measurements
above.
1.6
1.7
1.8
1.9
2
2.1 2.2
2.3 2.4 2.5 2.6
2.7
Figure 5. NF, nominal=2dB, USL=2.7dB
2
Electrical Specifications
[1]
T
A
= 25°C, Vdd =5V
Symbol
Ids
Gain
Parameter and Test Condition
Quiescent current
Gain
Frequency
N/A
40MHz
900MHz
1950MHz
40MHz
900MHz
1950MHz
40MHz
900MHz
1950MHz
40MHz
900MHz
1950MHz
40MHz
900MHz
1950MHz
40MHz
900MHz
1950MHz
40MHz
900MHz
1950MHz
Units
mA
dB
Min.
53
Typ.
65
15.9
15.5
15.7
37
38
36
2.0
1.9
2.0
-16
-17
-13
-16
-16.5
-13
-17
-17
-22
21
20
20
Max.
77
14.6
dBm
33
dB
–
dB
16.8
OIP3
[2]
Output Third Order Intercept Point
–
NF
Noise Figure
2.7
S11
Input Return Loss, 50Ω source
S22
Output Return Loss, 50Ω load
dB
S12
Reverse Isolation
dB
OP1dB
Output Power at 1dB Gain Compression
dBm
19.2
–
Notes:
1. Measurements obtained using demo board described in Figure 30 and 31. 40MHz data was taken with 40MHz - 2GHz Application Test Circuit,
900MHz data with 0.2GHz – 2.6GHz Application Test Circuit and 1.95GHz data with 1.5GHz - 2.6GHz Application Test Circuit respectively.
2. OIP3 test condition: F
RF1
- F
RF2
= 10MHz with input power of -15dBm per tone measured at worse side band.
3. Use proper bias, heat sink and de-rating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application
note (if applicable) for more details.
3
Typical Performance (40MHz - 2GHz)
T
A
= 25°C, Vdd =5V, Input Signal=CW. Application Test Circuit is shown in Figure 30 and Table 1.
80
17
16
70
Ids (mA)
Gain (dB)
60
15
14
13
12
11
-40
-30
-20
-10
10
20
30
40
50
60
70
80
90
0
50
10
85°C
25°C
-40°C
Frequency (GHz)
Figure 7. Gain over Frequency and Temperature
Temperature (°C)
Figure 6. Ids over Temperature
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
Frequency (GHz)
Figure 8. OIP3 over Frequency and Temperature
Figure 9. P1dB over Frequency and Temperature
0
-5
-10
S11 (dB)
-15
-20
-25
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
-30
S22 (dB)
85°C
25°C
-40°C
0
-5
-10
-15
-20
-25
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
Frequency (GHz)
Figure 11. S22 over Frequency and Temperature
-30
85°C
25°C
-40°C
Frequency (GHz)
Figure 10. S11 over Frequency and Temperature
4
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
Frequency (GHz)
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
85°C
25°C
-40°C
P1dB(dBm)
25
24
23
22
21
20
19
18
17
16
15
OIP3 (dBm)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
85°C
25°C
-40°C
Typical Performance (40MHz - 2GHz)
T
A
= 25°C, Vdd =5V, Input Signal=CW. Application Test Circuit is shown in Figure 30 and Table 1.
-15
-16
-17
-18
-19
-20
-21
-22
-23
-24
-25
5.0
85°C
25°C
-40°C
NF(dB)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
Frequency (GHz)
Figure 13. Noise Figure over Frequency and Temperature
85°C
25°C
-40°C
Frequency (GHz)
Figure 15. Gain over Frequency and Temperature
85°C
25°C
-40°C
Frequency (GHz)
Figure 17. P1dB over Frequency and Temperature
1.0
85°C
25°C
-40°C
S12 (dB)
Figure 12. S12 over Frequency and Temperature
Typical Performance (0.2GHz - 2.6GHz)
T
A
= 25°C, Vdd =5V, Input Signal=CW. Application Test Circuit is shown in Figure 30 and Table 2.
80
17
16
70
Ids (mA)
Gain (dB)
60
-40
-30
-20
-10
10
20
30
40
50
60
70
80
Temperature (°C)
Figure 14. Ids over Temperature
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
90
0
50
85°C
25°C
-40°C
P1dB(dBm)
Frequency (GHz)
Figure 16. OIP3 over Frequency and Temperature
5
15
14
13
12
11
10
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
Frequency (GHz)
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
25
24
23
22
21
20
19
18
17
16
15
OIP3 (dBm)
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
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