IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BT131-600D
4Q Triac
6 May 2015
Product data sheet
1. General description
Planar passivated very sensitive gate four quadrant triac in a SOT54 plastic package.
This very sensitive gate "series D" triac is intended for interfacing with low power drivers
including microcontrollers.
2. Features and benefits
•
•
•
•
•
•
Direct interfacing to logic level ICs
Direct interfacing with low power gate drivers and microcontrollers
High blocking voltage capability
Planar passivated for voltage ruggedness and reliability
Very sensitive gate
Triggering in all four quadrants
3. Applications
•
•
•
Air conditioner indoor fan control
General purpose low power motor control
General purpose switching and phase control
4. Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
RMS on-state current
full sine wave; T
lead
≤ 51 °C;
Fig. 1;
Fig. 2; Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
-
-
5
mA
-
-
5
mA
-
-
5
mA
Conditions
Min
-
-
-
Typ
-
-
-
Max
600
12.5
1
Unit
V
A
A
Scan or click this QR code to view the latest information for this product
TO
-92
NXP Semiconductors
BT131-600D
4Q Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 7
Min
-
Typ
-
Max
7
Unit
mA
5. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
T2
G
T1
main terminal 2
gate
main terminal 1
321
Simplified outline
Graphic symbol
T2
sym051
T1
G
TO-92 (SOT54)
6. Ordering information
Table 3.
Ordering information
Package
Name
BT131-600D
BT131-600D/L01
TO-92
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
SOT54
Type number
BT131-600D
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
6 May 2015
2 / 13
NXP Semiconductors
BT131-600D
4Q Triac
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
lead
≤ 51 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I t
dI
T
/dt
2
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-
Max
600
1
12.5
13.7
0.78
50
50
10
50
2
5
0.1
150
125
003aab042
Unit
V
A
A
A
2
I2t for fusing
rate of rise of on-state current
t
p
= 10 ms; SIN
I
G
= 10 mA; T2+ G+
I
G
= 10 mA; T2+ G-
I
G
= 14 mA; T2- G+
I
G
= 10 mA; T2- G-
A s
A/µs
A/µs
A/µs
A/µs
A
W
W
°C
°C
I
GM
P
GM
P
G(AV)
T
stg
T
j
1.2
I
T(RMS)
(A)
0.8
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
003aab039
over any 20 ms period
-
-40
-
3
I
T(RMS)
(A)
2
51.2 °C
0.4
1
0
- 50
0
50
100
T
lead (°C)
150
0
10
- 2
10
- 1
1
10
surge duration (s)
T
lead
= 51.2 °C
Fig. 1.
RMS on-state current as a function of lead
temperature; maximum values
Fig. 2.
f = 50 Hz; T
lead
= 51.2 °C
RMS on-state current as a function of surge
duration; maximum values
BT131-600D
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
6 May 2015
3 / 13
NXP Semiconductors
BT131-600D
4Q Triac
1.5
P
tot
(W)
1
α
α
003aab038
35
T
lead(max)
(°C)
65
α =180°
120°
90°
60°
30°
0.5
95
0
0
0.2
0.4
0.6
0.8
1
I
T(RMS)
(A)
1.2
125
α = conduction angle
Fig. 3.
Total power dissipation as a function of RMS on-state current; maximum values
16
I
TSM
(A)
12
003aab041
I
T
I
TSM
t
T
T
j
= 25 °C max
8
4
0
1
10
10
2
n
10
3
f = 50 Hz
Fig. 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT131-600D
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
6 May 2015
4 / 13
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