Small Signal Field-Effect Transistor, 0.99A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD
| 参数名称 | 属性值 |
| 包装说明 | CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code | unknow |
| ECCN代码 | EAR99 |
| 外壳连接 | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 60 V |
| 最大漏极电流 (ID) | 0.99 A |
| 最大漏源导通电阻 | 3 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| 最大反馈电容 (Crss) | 10 pF |
| JEDEC-95代码 | TO-205AD |
| JESD-30 代码 | O-MBCY-W3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | METAL |
| 封装形状 | ROUND |
| 封装形式 | CYLINDRICAL |
| 极性/信道类型 | N-CHANNEL |
| 功耗环境最大值 | 6.25 W |
| 认证状态 | Not Qualified |
| 参考标准 | MILITARY STANDARD (USA) |
| 表面贴装 | NO |
| 端子形式 | WIRE |
| 端子位置 | BOTTOM |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| JANTX2N6660B | JANTXV2N6660B | JAN2N6660B | |
|---|---|---|---|
| 描述 | Small Signal Field-Effect Transistor, 0.99A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD | Small Signal Field-Effect Transistor, 0.99A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD | Small Signal Field-Effect Transistor, 0.99A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD |
| 包装说明 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code | unknow | unknow | unknow |
| ECCN代码 | EAR99 | EAR99 | EAR99 |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 60 V | 60 V | 60 V |
| 最大漏极电流 (ID) | 0.99 A | 0.99 A | 0.99 A |
| 最大漏源导通电阻 | 3 Ω | 3 Ω | 3 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| 最大反馈电容 (Crss) | 10 pF | 10 pF | 10 pF |
| JEDEC-95代码 | TO-205AD | TO-205AD | TO-205AD |
| JESD-30 代码 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
| 元件数量 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | METAL | METAL | METAL |
| 封装形状 | ROUND | ROUND | ROUND |
| 封装形式 | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 功耗环境最大值 | 6.25 W | 6.25 W | 6.25 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 参考标准 | MILITARY STANDARD (USA) | MILITARY STANDARD (USA) | MILITARY STANDARD (USA) |
| 表面贴装 | NO | NO | NO |
| 端子形式 | WIRE | WIRE | WIRE |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 |
| 外壳连接 | DRAIN | DRAIN | - |
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