MGA-684P8
Low Noise Active Bias Low Noise Amplifier
Data Sheet
Description
Avago Technologies’ MGA-684P8 is an economical, easy-
to-use GaAs MMIC Low Noise Amplifier (LNA). The LNA
has low noise and high linearity achieved through the
use of Avago Technologies’ proprietary 0.25
m
GaAs
Enhancement-mode pHEMT process. It is housed in a
miniature 2.0 x 2.0 x 0.75 mm
3
8-pin Quad-Flat-Non-Lead
(QFN) package. It is designed for optimum use from 1.5
GHz up to 4 GHz. The compact footprint and low profile
coupled with low noise, high gain and high linearity make
the MGA-684P8 an ideal choice as a low noise amplifier for
cellular infrastructure for GSM and CDMA. For optimum
performance at lower frequency from 450 MHz up to 1.5
GHz, MGA-683P8 is recommended. Both MGA-683P8 and
MGA-684P8 share the same package and pinout configu-
ration.
Features
Low noise Figure
High linearity performance
GaAs E-pHEMT Technology
[1]
Low cost small package size: 2.0 x 2.0 x 0.75 mm
3
Excellent uniformity in product specifications
Tape-and-Reel packaging option available
Specifications
1.9 GHz; 5 V, 35 mA
17.6 dB Gain
0.56 dB Noise Figure
21 dB Input Return Loss
32.4 dBm Output IP3
22 dBm Output Power at 1dB gain compression
Pin Configuration and Package Marking
2.0
x 2.0 x 0.75 mm
3
8-lead QFN
[1]
[2]
[3]
[4]
Top View
Pin 1
Pin 2
Pin 3
Pin 4
– Vbias
– RFinput
– Not Used
– Not Used
[8]
[8]
[7]
[6]
[5]
Bottom View
Pin 5 – Not Used
Pin 6 – Not Used
Pin 7 – RFoutput/Vdd
Pin 8 – Not Used
Centre tab - Ground
[1]
[2]
[3]
[4]
Applications
Low noise amplifier for cellular infrastructure for GSM
TDS-CDMA, and CDMA.
Other low noise application.
Repeater, Metrocell/Picocell application.
84X
[7]
[6]
[5]
Simplified Schematic
Vdd
C5
R1
Rbias
R2
C6
C3
C4
L1
RFin
L3
C1
[1]
[2]
[3]
[4]
Note:
Package marking provides orientation and identification
“84” = Device Code, where X is the month code.
L2
[8]
[7]
[6]
[5]
C2
RFout
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 70 V (Class A)
ESD Human Body Model = 500 V (Class 1B)
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Note:
The schematic is shown with the assumption that similar PCB is used
for both MGA-683P8 and MGA-684P8.
Detail of the components needed for this product is shown in Table 1.
Enhancement mode technology employs positive gate voltage,
thereby eliminating the need of negative gate voltage associated
with conventional depletion mode devices.
Good RF practice requires all unused pins to be earthed.
Absolute Maximum Rating
[1]
T
A
=25° C
Symbol
V
dd
V
bias
Idd
P
in,max
P
diss
T
j
T
stg
Thermal Resistance
Units
V
V
mA
dBm
W
°C
°C
Parameter
Device Voltage,
RF output to ground
Gate Voltage
Drain Current
CW RF Input Power
(V
dd
= 5.0 V, I
d
= 50 mA)
Total Power Dissipation
[2]
Junction Temperature
Storage Temperature
Absolute Maximum
5.5
0.7
90
+20
0.5
150
-65 to 150
Thermal Resistance
[3]
(V
dd
= 5.0 V, I
dd
= 35 mA per channel),
jc
= 62°C/W per channel
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using Infra-Red
Measurement Technique.
3. Power dissipation with unit turned on. Board
temperature T
B
is 25° C. Derate at 16 mW/°C
for T
B
> 119° C.
Electrical Specifications
[1], [4]
RF performance at T
A
= 25° C, V
dd
= 5 V, R
bias
= 6.8 kOhm, 1.9 GHz, measured on demo board in Figure 5 with component
list in Table 1 for 1.9 GHz matching.
Symbol
I
dd
Gain
OIP3
[2]
NF
[3]
OP1dB
IRL
ORL
REV ISOL
Parameter and Test Condition
Drain Current
Gain
Output Third Order Intercept Point
Noise Figure
Output Power at 1dB Gain Compression
Input Return Loss, 50
source
Output Return Loss, 50
load
Reverse Isolation
Units
mA
dB
dBm
dB
dBm
dB
dB
dB
Min.
23
16.1
29
Typ.
35.2
17.6
32.4
0.56
22
21
12
30
Max.
47
19.1
0.8
Notes:
1. Measurements at 1.9 GHz obtained using demo board described in Figure 1.
2. OIP3 test condition: F
RF1
= 1.9 GHz, F
RF2
= 1.901 GHz with input power of -10 dBm per tone.
3. For NF data, board losses of the input have not been de-embedded.
4. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application
note for more details.
2
Product Consistency Distribution Charts
(1, 2)
LSL
Id
Max :
47
Min :
23
Mean :
35.2
USL
USL
Noise Figure
Max : 0.8
Mean : 0.56
23
30
40
47
0.5
0.6
0.7
0.8
Figure 1. Idd @ 1.9 GHz Mean = 35.2 mA
Figure 2. Noise Figure @1.9 GHz, Mean = 0.56
LSL
OIP3
Min :
29
Mean :
32.4
LSL
Gain
Max : 19.1
Min : 16.1
Mean : 17.6
USL
28
29
30
31
32
33
34
35
16
17
18
19
Figure 3. OIP3 @ 1.9 GHz, Mean = 32.4
Figure 4. Gain @ 1.9 GHz, Mean = 17.6
Notes:
1. Distribution data samples are 500 samples taken from 3 different wafers. Future wafers allocated to this product may have nominal values anywhere
between the upper and lower limits.
2. Circuit Losses have not been de-embedded from the actual measurements.
3
Demo Board Layout
Gnd
Vdd
Vbias
Gnd
Jul 10
Demo Board Schematic
Rbias
C5
C6
R1
C3
L1
C1
L3
L2
C2
R2
C4
C5
10nF
Rbias
6.8KΩ
Vdd
C6
4.7uF
C3
10pF
R1
49.9Ω
R2
0Ω
C4
22pF
L1
18nH
C1
3.9pF
L2
6.8nH
C2
100pF
RFin
[1]
[2]
[8]
[7]
[6]
[5]
RFout
Avago
Technologies
Figure 5. Demo Board Layout Diagram
Rapala
W
MGA-68XP8
L3
4.7nH
[3]
[4]
Figure 6. Demo Board Schematic Diagram
Notes:
The schematic is shown with the assumption that similar PCB is used
for both MGA-683P8 and MGA-68P8.
Detail of the components needed for this product is shown in Table 1.
– Recommended PCB material is 10 mils Rogers RO4350.
– Suggested component values may vary according to
layout and PCB material.
Table 1. Component list for 1.9 GHz matching
Part
C1
C2
C3
C4
C5
C6
L1
L2
L3
Rbias
R1
R2
Size
0402
0402
0402
0402
0402
0805
0402
0402
0402
0402
0402
0402
Value
3.9 pF
100 pF
10 pF
22 pF
10 nF
4.7
F
18 nH
6.8 nH
4.7 nH
6.8 KOhm
49.9 Ohm
0 Ohm
Detail Part Number
Murata GRM15
Murata GRM15
Murata GRM15
Murata GRM15
Murata GRM15
Murata GRM15
Coilcraft CS0402
Toko FHL1005
Coilcraft CS0402
KOA RK73
KOA RK73
KOA RK73
Notes:
C2 is a blocking capacitor
L2 output match for OIP3
L1, C1 and L3 are used for IRL matching.
C3, C4, C5, C6 are bypass capacitors
R1 is stabilizing resistor
Rbias is the biasing resistor
4
MGA-684P8 Typical Performance in Demoboard
RF performance at T
A
= 25° C, Vdd = 5 V, Rbias = 6.8 kOhm, measured on demo board in Figure 5 with component list in
Table1 for 1.9 GHz matching, unless otherwise stated.
1.4
1.2
1
NF
(dB)
0.8
0.6
0.4
0.2
0
1.5
1.7
1.9
2.5
2.1
2.3
Frequency (GHz)
2.7
-40°
C
25°
C
85°
C
2.9
3.1
Gain
(dB)
15
10
5
0
25
20
-40°
C
25°
C
85°
C
1.5
2
2.5
3
Frequency (GHz)
3.5
4
Figure 7. NF vs Frequency vs Temperature
Figure 8. Gain vs Frequency vs Temperature
34
33
32
P1dB
(dBm)
-40°
C
25°
C
85°
C
1.7
1.9
2.1
Frequency (GHz)
2.3
2.5
OIP3
(dBm)
31
30
29
28
27
26
1.5
23
22.5
22
21.5
21
20.5
20
1.5
1.7
1.9
2.1
Frequency (GHz)
2.3
2.5
-40°
C
25°
C
85°
C
Figure 9. OIP3 vs Frequency vs Temperature
Figure 10. OP1dB vs Frequency vs Temperature
5
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