MGA-31816
0.1 W High Linearity Driver Amplifier
Data Sheet
Description
Avago Technologies MGA-31816 is a high linearity driver
MMIC Amplifier housed in a standard QFN 3X3 16 lead
plastic package. It features high gain, low operating
current, good noise figure with good input and output
return loss. Power consumption can be further reduced
by reducing the quiescent bias current using two external
bias resistors. The device can be easily matched at different
frequencies to obtain optimal linearity performance at
those frequencies.
MGA-31816 is especially ideal for 50
wireless infrastruc-
ture application operating from 1.5 GHz to 4 GHz frequency
range applications. With the high linearity, excellent gain
flatness and low noise figure the MGA-31816 may be
utilized as a driver amplifier in the transmit chain and as a
second stage LNA in the receiver chain.
This device uses Avago Technologies proprietary 0.25
m
GaAs Enhancement mode PHEMT process.
Features
Very high linearity at low DC bias power
[1]
High Gain with good gain flatness
Good Noise Figure
ROHS compliant
Halogen free
Advanced enhancement-mode PHEMT Technology
QFN 3X3 16-Lead standard package
Lead-free MSL1
Specifications
At 1900 MHz, V
dd
= 5 V, I
dd
= 59 mA (typ) @ 25° C
OIP3 = 40.5 dBm
Noise Figure = 1.6 dB
Gain = 19.5 dB
P1dB = 20.5 dBm
IRL = 16.5 dB, ORL = 10.6 dB
Note:
1. The MGA-31816 has a superior LFOM of 15.8 dB. Linearity Figure of
Merit (LFOM) is essentially OIP3 divided by DC bias power.
Pin connections and Package Marking
31816
YYWW
XXXX
TOP VIEW
Vbias 16
Vctrl 15
NC 14
Vd 13
NC 12
RFout 11
RFout 10
NC 9
8 NC
7 NC
6 NC
5 NC
Gnd
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 60 V
ESD Human Body Model = 300 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
1 NC
2 NC
3 RFin
4 NC
Vbias
NC - not connected
RFIN
Vctrl
Biasing Network
RFOUT
Vdd
BOTTOM VIEW
Notes:
Package marking provides orientation and identification
“31816” = Device Part Number
“YYWW” = Work Week and Year of manufacturing
“XXXX” = Last 4 digit of Lot Number
Figure 1. Simplified Application Circuit
Table 1. MGA-31816 Absolute Maximum Rating
[1]
(T
A
= 25° C)
Symbol
V
dd, max
V
bias, max
V
ctrl, max
P
d
P
in
T
j
T
stg
T
amb
Thermal Resistance
Absolute Maximum
5.5
5.5
5.5
605
24
150
-65 to 150
-40 to 85
Parameter
Drain Voltage
Bias Voltage
Control Voltage
Power Dissipation
[2]
CW RF Input Power
Junction Temperature
Storage Temperature
Ambient Temperature
Units
V
V
V
mW
dBm
°C
°C
°C
Thermal Resistance
[3]
(V
dd
= 5.0 V, T
C
= 85° C)
jc
= 65.8°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage
2. Source lead temperature is 25° C. Derate 15.2
mW/°C for T
L
> 126.0° C.
3. Thermal resistance measured using 150° C
Infra-Red Microscopy Technique.
Table 2. MGA-31816 Electrical Specification
[1]
T
C
= 25° C, V
dd
= 5.0 V, unless noted
Symbol
I
ds
Parameter and Test Condition
Quiescent Current
Frequency
1900 MHz
2600 MHz
3500 MHz
1900 MHz
2600 MHz
3500 MHz
1900 MHz
2600 MHz
3500 MHz
1900 MHz
2600 MHz
3500 MHz
1900 MHz
2600 MHz
3500 MHz
1900 MHz
2600 MHz
3500 MHz
1900 MHz
2600 MHz
3500 MHz
1900 MHz
2600 MHz
3500 MHz
1900 MHz
2600 MHz
3500 MHz
1900 MHz
2600 MHz
3500 MHz
Units
mA
Min.
37
Typ.
59
61
59
1.6
1.6
1.8
19.5
18.8
18.5
40.5
42.0
41.3
15.8
17.3
16.9
20.5
19.8
19.3
38.2
31.6
29.9
16.5
22.9
21.1
10.6
10.0
11.4
25.7
26.5
28.1
Max.
83
NF
Noise Figure
dB
–
2.4
Gain
Gain
dB
18
21
OIP3
[2]
Output Third Order Intercept Point
dBm
37
–
LFOM
[2, 3]
Linearity Figure of Merit
dB
–
–
P1dB
Output Power at 1dB Gain Compression
dBm
19
–
PAE
Power Added Efficiency at P1dB
%
–
–
IRL
Input Return Loss
dB
–
–
ORL
Output Return Loss
dB
–
–
ISOL
Isolation
dB
–
–
Notes:
1. Measurements obtained from test circuits detailed in Figures 46 and 47 and Table 3.
2. OIP3 test condition: F1 – F2 = 1 MHz, with input power of -13 dBm per tone measured at worst case side band.
3. LFOM is defined as LFOM = OIP3 (in dBm) – P
DC
(in dBm). It is a measure of the linearity of an amplifier per unit of DC power consumed.
4. Demoboard tuned to best OIP3 with minimum over temperature drift.
2
MGA-31816 Consistency Distribution Chart
[1, 2]
LSL
USL
USL
40
50
60
70
80
1.4
1.6
1.8
2
2.2
2.4
Figure 2. I
dd
@ 1900 MHz; LSL = 37 mA, Nominal = 59 mA, USL = 83 mA
Figure 3. NF @ 1900 MHz; Nominal = 1.6 dB, USL = 2.4 dB
LSL
USL
LSL
18
19
20
21
38
40
42
44
46
48
Figure 4. Gain @ 1900 MHz; LSL = 18 dB, Nominal = 19.5 dB, USL = 21 dB
Figure 5. OIP3 @ 1900 MHz; Nominal = 40.5 dBm, LSL = 37 dBm
LSL
19
20
21
22
Figure 6. P1dB @ 1900 MHz; Nominal = 20.5 dBm, LSL = 19 dBm
Notes:
1. Data sample size is 4000 samples taken from 4 different wafers and 2 different lots. Future wafers allocated to this product may have nominal
values anywhere between the upper and lower limits.
2. Measurements are made on production test board which represents a trade-off between optimal Gain, NF, OIP3 and OP1dB. Circuit losses have
been de-embedded from actual measurements.
3
MGA-31816 Typical Performance Data for 1.9 GHz
T
C
= 25° C, V
dd
= 5.0 V, I
dd
= 59 mA (Based on BOM in Table 3, tuned for optimal linearity with over temperature)
42
41
40
39
38
37
36
35
34
33
32
31
-20 -19
43
42
41
40
39
38
37
36
35
34
33
32
31
1600
OIP3 (dBm)
25° C
-40° C
85° C
-18 -17 -16 -15 -14 -13 -12 -11 -10 -9
Pin (dBm)
-8
-7
OIP3 (dBm)
25° C
-40° C
85° C
1700
1800
1900
2000
Frequency (MHz)
2100
2200
Figure 7. OIP3 vs Pin and Temperature
Figure 8. OIP3 vs Frequency and Temperature
20
18
17
Input Return Loss (dB)
19
Gain (dB)
25° C
-40° C
85° C
1700
1800
1900
2000
Frequency (MHz)
2100
2200
16
1600
-8
-10
-12
-14
-16
-18
-20
-22
-24
-26
-28
-30
-32
-34
-36
-38
-40
1600
25° C
-40° C
85° C
1700
1800
1900
2000
Frequency (MHz)
2100
2200
Figure 9. Gain vs Frequency and Temperature
Figure 10. IRL vs Frequency and Temperature
-3
-4
-5
-6
-7
-8
-9
-10
-11
-12
-13
-14
-15
-16
-17
-18
1600
-24
25° C
-40° C
85° C
Isolation (dB)
-25
-26
-27
-28
-29
1600
25° C
-40° C
85° C
1700
1800
1900
2000
Frequency (MHz)
2100
2200
Output Return Loss (dB)
1700
1800
1900
2000
Frequency (MHz)
2100
2200
Figure 11. ORL vs Frequency and Temperature
Figure 12. Isolation vs Frequency and Temperature
4
MGA-31816
Application Circuit Data for 1.9 GHz
T
C
= 25° C, V
dd
= 5.0 V, I
dd
= 59 mA (Based on BOM in Table 3, tuned for optimal linearity with over temperature)
21.1
20.9
20.7
20.5
20.3
20.1
19.9
19.7
19.5
19.3
19.1
18.9
18.7
1600
2.2
2.1
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
1600
25° C
-40° C
85° C
25° C
-40° C
85° C
1700
1800
1900
2000
Frequency (MHz)
2100
2200
Noise Figure (dB)
P1dB (dBm)
1700
1800
1900
2000
Frequency (MHz)
2100
2200
Figure 13. P1dB vs Frequency and Temperature
Figure 14. Noise Figure vs Frequency and Temperature
90
80
70
60
OIP3 (dBm)
Idd (mA)
42.0
25° C
-40° C
85° C
41.5
41.0
40.5
40.0
39.5
1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 5.0 5.4
Vdd (V)
39.0
680
OIP3 at R2 = 1000
Current at R2 = 1000
750
820
R1 ( )
910
64
62
60
58
56
54
52
1000
Idd (mA)
50
40
30
20
10
0
Figure 15. Current vs Voltage and Temperature
Figure 16. OIP3 and Quiescent Current with different R1
[1]
42.0
41.5
OIP3 (dBm)
41.0
40.5
40.0
39.5
39.0
820
OIP3 at R1 = 820
Current at R1 = 820
910
1000
R2 ( )
1100
66
64
62
60
58
56
54
1200
Idd (mA)
Figure 17. OIP3 and Quiescent Current with different R2
[1]
Note:
1. Vbias and Vctrl can be externally controlled by change external biasing resistors R1 = Rbias and R2 = Rctrl (as shown in Fig. 46).
5
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