MGA-31489
0.1W High Gain Driver Amplifier
1.5GHz ~ 3GHz
Data Sheet
Description
Avago Technologies MGA-31489 is a high performance
Driver Amplifier MMIC, housed in a standard SOT-89 plastic
package. The device features flat high gain with excellent
input and output return loss, as well as superior linearity
performance. The device can be easily matched to obtain
desired performance.
MGA-314389 is especially ideal for 50
Ω
wireless infrastruc-
ture application within the 1.5 GHz to 3 GHz frequency
range applications. With high IP3 and low noise figure and
wideband operation, the MGA-31489 may be utilized as
a driver amplifier in the transmit chain and as a second
stage LNA in the receiver chain.
This device uses Avago Technologies proprietary 0.25
mm
GaAs Enhancement mode PHEMT process.
Features
•
ROHS compliant
•
Halogen free
•
High IP3 at low DC bias power
[1]
•
High gain, with good gain flatness
•
Low noise figure
•
Advanced enhancement mode PHEMT Technology
•
Excellent uniformity in product specification
•
SOT-89 standard package
Specifications
At 1.9 GHz, Vd = 5 V, Id = 69 mA (typ) @ 25° C
•
OIP3 = 37.3 dBm
•
Noise Figure = 1.9 dB
•
Gain = 19.5 dB, Gain Flatness (± 50 MHz) = 0.11 dB
•
P1dB = 21.9 dBm
•
IRL = 17.2 dB, ORL = 10.1 dB
Note:
1. The MGA-31489 has a superior LFOM of 11.9 dB. Linearity Figure of
Merit (LFOM) is essentially OIP3 divided by DC bias power.
Pin connections and Package Marking
14X
#1
#2
RFin
GND
Top View
#3
RFout
#3
#2
RFout
GND
#1
RFin
Simplified Schematic
Vdd
C
C
C
Bottom View
Note:
Top View: Package marking provides orientation and identification
“14” = Device Code
“X” = Date Code character indentifies month of manufacturing
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 120 V
ESD Human Body Model = 1400 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
RFin
C
L
RFout
C
L
Figure 1. Simplified Schematic diagram
MGA-31489 Absolute Maximum Rating
[1]
T
A
=25° C
Symbol
V
d, max
P
d
P
in
T
j
T
STG
Thermal Resistance
Units
V
mW
dBm
°C
°C
Parameter
Drain Voltage, RF output to ground
Power Dissipation
(2)
CW RF Input Power
Junction Temperature
Storage Temperature
Absolute Max.
5.5
605
20
150
-65 to 150
Thermal Resistance
[3]
(V
d
= 5.0 V, T
c
= 85° C),
θ
jc
= 51.7° C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Source lead temperature is 25° C. Derate 19.3
mW/° C for T
L
>131.4° C.
3. Thermal resistance measured using 150° C
Infra-Red Microscopy Technique.
MGA-31489 Electrical Specification
[1]
T
C
= 25° C, V
d
= 5 V, unless noted
Symbol
I
ds
NF
Gain
OIP3
(2)
P1dB
PAE
IRL
ORL
ISOL
Parameter and Test Condition
Quiescent Current
Noise Figure
Gain
Output Third Order Intercept Point
Output Power at 1 dB Gain Compression
Power Added Efficiency at P1dB
Input Return Loss
Output Return Loss
Isolation
Frequency
N/A
1.9 GHz
2.5 GHz
1.9 GHz
2.5 GHz
1.9 GHz
(2)
2.5 GHz
(2)
1.9 GHz
2.5 GHz
1.9 GHz
2.5 GHz
1.9 GHz
2.5 GHz
1.9 GHz
2.5 GHz
1.9 GHz
2.5 GHz
Units
mA
dB
dB
dBm
dBm
%
dB
dB
dB
Min.
57
–
18.2
34.8
20.1
–
–
–
–
Typ.
69
1.9
2.0
19.5
20.5
37.3
37.2
21.9
22.2
39.1
40.2
17.2
15.9
10.1
18.5
27.0
29.3
Max.
84
2.35
21.2
–
–
–
–
–
–
Note :
1. Measurements obtained from a test circuit described in Figure 25.
2. OIP3 test condition: F1 - F2 = 10 MHz, with input power of -12 dBm per tone measured at worst case side band.
2
MGA-31489 Consistency Distribution Chart
[1,2]
62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79
Figure 2. Id @ 1900MHz, Vd=5V, LSL=57mA, Nominal=70mA, USL=84mA
1.7
1.8
1.9
2
2.1
Figure 3. NF @ 1900MHz, Vd=5V, Nominal=1.9dB, USL=2.35dB
19
19.1 19.2 19.3 19.4 19.5 19.6 19.7 19.8 19.9
20
36
37
38
Figure 4. Gain @ 1900MHz, Vd=5V, LSL=18.2dB, Nominal=19.5dB,
USL=21.2dB
Figure 5. OIP3 @ 1900MHz, Vd=5V, LSL=34.8dBm, Nominal=36.8dBm
20.7 20.9
21.1
21.3 21.5
21.7
21.9
22.1
22.3
22.5
Figure 6. P1dB @ 1900MHz, Vd=5V, LSL=20.1dBm, Nominal=21.6dBm
Notes:
1. Data sample size is 1500 samples taken from 3 different wafers and 2 different lots. Future wafers allocated to this product may have nominal
values anywhere between the upper and lower limits.
2. Measurements are made on production test board which represents a trade-off between optimal Gain, NF, OIP3 and OP1dB. Circuit losses have
been de-embedded from actual measurements.
3
MGA-31489 Application Circuit Data for 1.9 MHz
T
c
= 25° C, V
d
= 5.0 V, I
d
= 69 mA
41
40
39
37
36
35
34
33
32
1600
1700
1800
1900
2000
Frequency (MHz)
25° C
-40° C
85° C
2100
2200
P1dB (dBm)
OIP3 (dBm)
38
23.0
22.5
22.0
21.5
21.0
20.5
20.0
19.5
19.0
1600
1700
1800
1900
2000
Frequency (MHz)
25° C
-40° C
85° C
2100
2200
Figure 7. OIP3 vs Frequency and Temperature
Figure 8. P1dB vs Frequency and Temperature
23
22
21
Gain (dB)
20
19
18
17
1600
1700
1800
1900
2000
Frequency (MHz)
2100
2200
IRL (dB)
25° C
-40° C
85° C
-11
-12
-13
-14
-15
-16
-17
-18
1600
1700
1800
1900
2000
Frequency (MHz)
2100
2200
25° C
-40° C
85° C
Figure 9. Gain vs Frequency and Temperature
Figure 10. IRL vs Frequency and Temperature
-5
-6
-7
-8
-9
-10
-11
-12
-13
-14
-15
-16
1600
25° C
-40° C
85° C
Isolation (dB)
1700
1800
1900
2000
Frequency (MHz)
2100
2200
-26.0
-26.2
-26.4
-26.6
-26.8
-27.0
-27.2
-27.4
-27.6
-27.8
-28.0
-28.2
1600
25° C
-40° C
85° C
ORL (dB)
1700
1800
1900
2000
Frequency (MHz)
2100
2200
Figure 11. ORL vs Frequency and Temperature
Figure 12. Isolation vs Frequency and Temperature
4
MGA-31489 Application Circuit Data for 1.9 MHz
(cont'd)
T
c
= 25° C, V
d
= 5.0 V, I
d
= 69 mA
3.0
2.5
Noise Figure (dB)
OIP3 (dBm)
2.0
1.5
1.0
0.5
0.0
1600
1700
1800
1900
2000
Frequency (MHz)
25° C
-40° C
85° C
2100
2200
40
39
38
37
36
35
34
33
25° C
-40° C
85° C
-20 -19 -18 -17 -16 -15 -14 -13 -12 -11 -10 -9 -8 -7 -6 -5
Pin (dBm)
Figure 13. Noise Figure vs Frequency and Temperature
Figure 14. OIP3 vs Input Power and Temperature
120
100
Current (mA)
80
60
40
20
0
1.0
1.5
2.0
2.5
3.0 3.5 4.0
Voltage (Volt)
4.5
25° C
-40° C
85° C
5.0
5.5
Figure 15. Current vs Voltage and Temperature
5
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