MGA-31289
0.25W High Gain Driver Amplifier
1500 - 3000 MHz
Data Sheet
Description
Avago Technologies MGA-31289 is a 0.25W high gain
driver amplifier MMIC with good gain flatness, housed in
a standard SOT-89 plastic package. The device features
high linearity performance, excellent input and output
return loss, and low noise figure. The device can be easily
matched to obtain optimum power and linearity.
MGA-31289 is externally tunable to operate within 1.5GHz
to 3GHz frequency range applications. With high IP3, low
noise figure and wideband operation, MGA-31289 may be
utilized as a driver amplifier in the transmit chain and as a
second stage LNA in the receive chain.
This device uses Avago Technologies proprietary 0.25um
GaAS Enhancement mode PHEMT process.
Features
•
ROHS compliant
•
Halogen free
•
High linearity at low DC bias power
(1)
•
High Gain
•
Good gain flatness
•
Low noise figure
•
Excellent uniformity in product specification
•
SOT-89 standard package
Specifications
At 1.9GHz, Vd = 5V, Id = 124mA (typ) @ 25°C
•
OIP3 = 41.8dBm
•
Noise Figure = 2dB
•
Gain = 18.70dB; Gain Flatness (+/-50MHz) = 0.1dB
•
P1dB = 23.6dBm
•
IRL = 16.2dB, ORL = 10.3dB
Note:
1. The MGA-31289 has a good LFOM of 14dB. Linearity Figure of Merit
(LFOM) is essentially OIP3 divided by DC bias power.
Pin connections and Package Marking
12X
#1
#2
RFin
GND
Top View
#3
RFout
#3
#2
RFout
GND
#1
RFin
Bottom View
Vdd
C
C
C
L
RFin
C
Figure 1. Simplified Schematic diagram
C
RFout
Notes:
Top View : Package marking provides orientation and identification
“12” = Device Code
“X” = Date Code character identifies month of manufacturing
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 150 V
ESD Human Body Model = 2000 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
MGA-31289 Absolute Maximum Rating
(1)
T
A
=25°C
Symbol
I
d,max
V
d,max
P
d
P
in
T
j
T
stg
Thermal Resistance
Absolute Maximum
165
5.5
907.5
25
150
-65 to 150
Parameter
Drain Current
Device Voltage
Power Dissipation
(2)
CW RF Input Power
Junction Temperature
Storage Temperature
Units
mA
V
mW
dBm
°C
°C
Thermal Resistance
[3]
(V
d
= 5.0V, T
c
= 85°C)
θ
jc
= 50°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. This is limited by maximum Vd and Id. Board
temperature (T
C
) is 25°C. For T
C
>104°C, derate
the device power at 20mW per °C rise in board
temperature adjacent to package bottom.
3. Thermal resistance measured using Infra-Red
Microscopy Technique.
MGA-31289 Electrical Specifications
(1)
T
A
= 25°C, V
d
= 5V, unless noted
Symbol
I
ds
NF
Gain
OIP3
[2]
P1dB
PAE
IRL
ORL
ISOL
Parameter and Test Condition
Quiescent current
Noise Figure
Gain
Output Third Order Intercept Point
Output Power at 1dB Gain Compression
Power Added Efficiency at P1dB
Input Return Loss
Output Return Loss
Isolation
Frequency
N/A
1.9GHz
2.5GHz
1.9GHz
2.5GHz
1.9GHz
2.5GHz
1.9GHz
2.5GHz
1.9GHz
2.5GHz
1.9GHz
2.5GHz
1.9GHz
2.5GHz
1.9GHz
2.5GHz
Units
mA
dB
dB
dBm
dBm
%
dB
dB
dB
Min.
101
–
17
38.2
21.8
–
–
–
–
Typ.
124
2
2
18.7
17.7
41.8
41.5
23.6
23.7
36.4
34.8
16.2
15.5
10.3
10.8
27.3
27.7
Max.
143
2.45
20
–
–
–
–
–
–
Notes:
1. Typical performance obtained from a test circuit described in Figure 25.
2. OIP3 test condition: F1 - F2 = 10MHz, with input power of -10dBm per tone measured at worst case side band.
2
MGA-31289 Consistency Distribution Chart
(1, 2)
110
120
130
140
1.8
1.9
2
2.1
2.2
2.3
2.4
Figure 2. Idd @ 1900MHz, Vdd=5V, LSL=101mA, Nominal=124mA,
USL=143mA
Figure 3. NF @ 900MHz, Vdd = 5V, Nominal=2dB, USL=2.45dB
18
19
20
40
41
42
43
Figure 4. Gain @ 900MHz, Vdd = 5V, LSL=17dB, Nominal=18.7dB, USL=20dB
Figure 5. OIP3 @ 900MHz, Vdd = 5V, LSL=38.2, Nominal=41.8dBm
Notes:
1. Data sample size is 2800 samples taken from 4 different wafers and
2 different lots. Future wafers allocated to this product may have
nominal values anywhere between the upper and lower limits.
2. Measurements are made on production test board which represents
a trade-off between optimal Gain, NF, OIP3 and OP1dB. Circuit losses
have been de-embedded from actual measurements.
23
24
Figure 6. P1dB @ 900MHz, Vdd = 5V, LSL=21.8dBm, Nominal=23.6dBm
3
MGA-31289 Application Circuit Data for 1900MHz
T
A
= 25°C, V
d
= 5.0V, I
d
= 124mA
50
45
OIP3 (dBm)
40
35
30
1600
85°C
25°C
-40°C
P1dB (dBm)
25.0
24.5
24.0
23.5
23.0
22.5
22.0
1700
1800
1900
2000
Frequency (MHz)
2100
2200
21.5
1600
1700
1800
1900
2000
Frequency (MHz)
2100
2200
85°C
25°C
-40°C
Figure 7. OIP3 vs Frequency and Temperature
Figure 8. P1dB vs Frequency and Temperature
19.5
19.0
Gain (dB)
18.5
18.0
17.5
1600
85°C
25°C
-40°C
IRL (dB)
-10
-12
-14
-16
-18
-20
-22
85°C
25°C
-40°C
1700
1800
1900
2000
Frequency (MHz)
2100
2200
-24
1600
1700
1800
1900
2000
Frequency (MHz)
2100
2200
Figure 9. Gain vs Frequency and Temperature
Figure 10. IRL vs Frequency and Temperature
0
-2
-4
ORL (dB)
85°C
25°C
-40°C
Isolation (dB)
-24
-25
-26
-27
-28
-29
85°C
25°C
-40°C
-6
-8
-10
-12
-14
-16
1600
1700
1800
1900
2000
Frequency (MHz)
2100
2200
-30
1600
1700
1800
1900
2000
Frequency (MHz)
2100
2200
Figure 11. ORL vs Frequency and Temperature
Figure 12. Isolation vs Frequency and Temperature
4
MGA-31289 Application Circuit Data for 1900MHz
(continue)
3.0
2.5
Noise Figure (dB)
OIP3 (dBm)
85°C
25°C
-40°C
1700
1800
1900
2000
Frequency (MHz)
2100
2200
2.0
1.5
1.0
0.5
0.0
1600
44
42
40
38
36
34
32
0
85°C
25°C
-40°C
2
4
6
8
10
Pout (dBm)
12
14
16
Figure 13. Noise Figure vs Frequency and Temperature
Figure 14. OIP3 vs Output Power and Temperature
140
120
100
Current (mA)
80
60
40
20
85°C
25°C
-40°C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Voltage (V)
Figure 15. Current vs Voltage and Temperature
5
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