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JANTXV2N7236U

产品描述Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AB,
产品类别分立半导体    晶体管   
文件大小148KB,共21页
制造商Infineon(英飞凌)
官网地址http://www.infineon.com/
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JANTXV2N7236U概述

Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AB,

JANTXV2N7236U规格参数

参数名称属性值
是否Rohs认证不符合
包装说明CHIP CARRIER, R-CBCC-N3
Reach Compliance Codecompli
ECCN代码EAR99
其他特性HIGH RELIABILITY
雪崩能效等级(Eas)500 mJ
外壳连接DRAIN
配置SINGLE
最小漏源击穿电压100 V
最大漏极电流 (Abs) (ID)18 A
最大漏极电流 (ID)18 A
最大漏源导通电阻0.22 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码TO-267AB
JESD-30 代码R-CBCC-N3
JESD-609代码e0
元件数量1
端子数量3
工作模式ENHANCEMENT MODE
最高工作温度150 °C
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装形状RECTANGULAR
封装形式CHIP CARRIER
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型P-CHANNEL
最大功率耗散 (Abs)125 W
最大脉冲漏极电流 (IDM)72 A
认证状态Qualified
表面贴装YES
端子面层Tin/Lead (Sn/Pb)
端子形式NO LEAD
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用SWITCHING
晶体管元件材料SILICON
Base Number Matches1

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The documentation and process conversion
measures necessary to comply with this document
shall be completed by 20 January 2014.
INCH-POUND
MIL-PRF-19500/595K
20 November 2013
SUPERSEDING
MIL-PRF-19500/595J
25 October 2010
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT,
TRANSISTOR, P-CHANNEL, SILICON,
TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for a P-channel, enhancement-mode,
MOSFET, power transistor intended for use in high density power switching applications. Four levels of product
assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product
assurance for each unencapsulated device type die, with avalanche energy ratings (EAS and EAR) and maximum
avalanche current (IAR).
1.2 Physical dimensions. See figure 1 (TO-254AA), figure 2 (TO-267AB) for surface mount devices, and figure 3
and 4 for JANHC and JANKC (die) dimensions.
1.3 Maximum ratings (T
C
= +25C, unless otherwise specified).
Min
Type
P
T
(1)
T
C
=
+25C
W
2N7236, 2N7236U
2N7237, 2N7237U
See notes next page.
125
125
P
T
T
A
=
+25C
W
4.0
4.0
R
JC
(2)
C/W
1.0
1.0
V
(BR)DSS
V
GS
= 0
I
D
= -1.0
mA dc
V dc
-100
-200
V
GS
I
D1
(3) (4) I
D2
(3) (4)
T
C
=
T
C
=
+25C
+100C
A dc
-18
-11
A dc
-11
-7
I
S
I
DM
(5)
T
J
and
T
STG
C
-55 to +150
-55 to +150
V dc
20
20
A dc A (pk)
-18
-11
-72
-44
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dla.mil.
Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at
https://assist.dla.mil/.
AMSC N/A
FSC 5961

 
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