电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

UF5407GP

产品描述3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD
产品类别半导体    分立半导体   
文件大小58KB,共3页
制造商MCC
官网地址http://www.mccsemi.com
下载文档 选型对比 全文预览

UF5407GP概述

3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD

文档预览

下载PDF文档
MCC
Features
  omponents
21201 Itasca Street Chatsworth

  !"#
$ %    !"#
UF5400GP
THRU
UF5408GP
3 Amp Ultra Fast
Glass Passivated
Recovery Rectifier
50 to 1000 Volts
DO-201AD
High Surge Capability
Glass Passivated Junction
Low Forward Voltage Drop
Ultra Fast Switching Speed For High Efficiency
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Typical Thermal Resistance 20°C/W
MCC
Device
Maximum
Maximum
Catalog
Marking
Recurrent
RMS
Number
Peak Reverse
Voltage
Voltage
UF5400GP
---
50V
35V
UF5401GP
---
100V
70V
UF5402GP
---
200V
140V
UF5404GP
---
400V
280V
UF5406GP
---
600V
420V
UF5407GP
---
800V
560V
UF5408GP
---
1000V
700V
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
400V
800V
1000V
D
A
Cathode
Mark
B
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
I
F(AV)
3A
T
A
= 55°C
Current
Peak Forward Surge
I
FSM
150A
8.3ms, half sine
Current
Maximum
Instantaneous
Forward Voltage
1.0V
I
FM
= 3.0A;
UF5400GP-5402GP
V
F
1.3V
UF5404GP
T
A
= 25°C
1.7V
UF5406GP-5408GP
Maximum DC
Reverse Current At
I
R
10µA
T
A
= 25°C
Rated DC Blocking
50µA
T
A
= 100°C
Voltage
Maximum Reverse
Recovery Time
50ns
I
F
=0.5A, I
R
=1.0A,
UF5400GP-5404GP
T
rr
75ns
I
rr
=0.25A
UF5406GP-5408GP
Typical Junction
Capacitance
75pF
Measured at
UF5400GP-5404GP
C
J
50pF
1.0MHz, V
R
=4.0V
UF5406GP-5408GP
*Pulse Test: Pulse Width 300µsec, Duty Cycle 1%
D
C
DIMENSIONS
INCHES
MIN
---
---
.048
1.000
MM
MIN
---
---
1.20
25.40
DIM
A
B
C
D
MAX
.370
.250
.052
---
MAX
9.50
6.40
1.30
---
NOTE
www.mccsemi.com

UF5407GP相似产品对比

UF5407GP UF5408GP UF5404GP UF5406GP UF5402GP UF5401GP UF5400GP
描述 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1222  1931  2460  1121  1528  25  39  50  23  31 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved