TSOP344..SB1BF
Vishay Semiconductors
IR Receiver Modules for Remote Control Systems
Description
The TSOP344..SB1BF - series are miniaturized
receivers for infrared remote control systems. PIN
diode and preamplifier are assembled on lead frame,
the epoxy package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. TSOP344..SB1BF is a
standard IR remote control receiver series for 3 V
supply voltage with excellent suppression of distur-
bance signals.
1
2
3
16656
Features
• Photo detector and preamplifier in one
package
• Internal filter for PCM frequency
e3
• Improved shielding against electrical
field
disturbance
• TTL and CMOS compatibility
• Output active low
• Supply voltage range: 2.7 V to 5.5 V
• Improved immunity against ambient light
• Enhanced suppression of IR disturbance signals
by narrow filter
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Pinning:
1 = OUT, 2 = GND, 3 = V
S
Parts Table
Part
TSOP34430SB1BF
TSOP34433SB1BF
TSOP34436SB1BF
TSOP34437SB1BF
TSOP34438SB1BF
TSOP34440SB1BF
TSOP34456SB1BF
Carrier Frequency
30 kHz
33 kHz
36 kHz
36.7 kHz
38 kHz
40 kHz
56 kHz
Block Diagram
Application Circuit
16833
3
30 kΩ
Input
PIN
AGC
Band
Pass
Demo-
dulator
V
S
17170
1
OUT
Circuit
Transmitter
TSOPxxxx
with
TSALxxxx
R
1
=
100
Ω
V
S
C
1
=
4.7 µF
V
O
+V
S
OUT
GND
µC
GND
2
Control Circuit
GND
R
1
+
C
1
recommended to suppress power supply
disturbances.
The output
voltage
should not
be hold
continuously at
a
voltage below
V
O
=
2.0 V
by
the external circuit.
Document Number 82274
Rev. 1.1, 28-Feb-05
www.vishay.com
1
TSOP344..SB1BF
Vishay Semiconductors
Absolute Maximum Ratings
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Supply Voltage
Supply Current
Output Voltage
Output Current
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
Soldering Temperature
(T
amb
≤
85 °C)
t
≤
10 s, 1mm from case
(Pin 3)
(Pin 3)
(Pin 1)
(Pin 1)
Test condition
Symbol
V
S
I
S
V
O
I
O
T
j
T
stg
T
amb
P
tot
T
sd
Value
- 0.3 to + 6.0
3
- 0.3 to V
S
+ 0.3 V
10
100
- 25 to + 85
- 25 to + 85
30
260
Unit
V
mA
V
mA
°C
°C
°C
mW
°C
Electrical and Optical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Supply Current (Pin 3)
Supply Voltage
Transmission Distance
E
v
= 0, test signal see fig.1,
IR diode TSAL6200,
I
F
= 250 mA
I
OSL
= 0.5 mA, E
e
= 0.7 mW/m
2
,
test signal see fig. 1
V
S
= 3 V
Pulse width tolerance:
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig.1
V
S
= 3 V
Pulse width tolerance:
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig.1
V
S
= 5 V
Pulse width tolerance:
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig.1
V
S
= 5 V
Pulse width tolerance:
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig.1
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig. 1
Angle of half transmission
distance
Test condition
E
v
= 0, V
S
= 3 V
E
v
= 40 klx, sunlight
Symbol
I
SD
I
SH
V
S
d
2.7
35
Min
0.7
Typ.
1.2
1.3
5.5
Max
1.5
Unit
mA
mA
V
m
Output Voltage Low (Pin 1)
Minimum Irradiance
(30 - 40 kHz)
V
OSL
E
e min
0.2
250
0.4
mV
mW/m
2
Minimum Irradiance (56 kHz)
E
e min
0.3
0.5
mW/m
2
Minimum Irradiance
(30 - 40 kHz)
E
e min
0.35
0.5
mW/m
2
Minimum Irradiance (56 kHz)
E
e min
0.45
0.6
mW/m
2
Maximum Irradiance
Directivity
E
e max
ϕ
1/2
30
± 45
W/m
2
deg
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Document Number 82274
Rev. 1.1, 28-Feb-05
TSOP344..SB1BF
Vishay Semiconductors
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
E
e
Optical Test Signal
(IR
diode TSAL6200, I
F
=
0.4 A, 30 pulses,
f = f
0
,
T
=
10 ms)
T
on
,T
off
–
Output Pulse
Width (
ms
)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.1
1.0
l
= 950
nm,
optical test signal,
fig.3
Toff
Ton
t
t
pi
*
T
*
t
pi
w
10/fo is recommended
for
optimal
function
V
O
V
OH
V
OL
t
d1
)
Output Signal
1
)
2
)
16110
7/f
0
<
t
d
<
15/f
0
t
pi
–5/f
0
<
t
po
<
t
pi
+6/f
0
t
po2
)
t
10.0
100.0 1000.010000.0
16909
E
e
–
Irradiance
(
mW/m
2
)
Figure 1. Output Function
Figure 4. Output Pulse Diagram
1.0
t
po
–
Output Pulse
Width (
ms
)
1.2
E
e min
/ E
e
– Rel. Responsivity
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.1
1.0
Output Pulse
1.0
0.8
0.6
0.4
0.2
0.0
0.7
f = f
0
"5%
Df
(
3dB
) = f
0
/10
0.9
1.1
1.3
Input Burst Duration
l
= 950
nm,
optical test signal,
fig.1
10.0
100.0 1000.010000.0
16925
16908
E
e
–
Irradiance
(
mW/m
2
)
f/f
0
– Relative Frequency
Figure 2. Pulse Length and Sensitivity in Dark Ambient
Figure 5. Frequency Dependence of Responsivity
E
e
Optical Test Signal
E
e min
–
Threshold Irradiance
(
mW/m
2
)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.01
Ambient,
l
= 950
nm
Correlation
with
ambient light sources:
10W/m
2
^1.4klx
(Std.illum.A,T=2855K)
10W/m
2
^8.2klx
(Daylight,T=5900K)
600
ms
T
=
60 ms
Output Signal,
(
see
Fig.4 )
600
ms
t
94
8134
V
O
V
OH
V
OL
T
on
T
off
t
16911
0.10
1.00
10.00
(W/m
2
)
100.00
E –
Ambient DC Irradiance
Figure 3. Output Function
Figure 6. Sensitivity in Bright Ambient
Document Number 82274
Rev. 1.1, 28-Feb-05
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3
TSOP344..SB1BF
Vishay Semiconductors
E
e min
–
Threshold Irradiance
(
mW/m
2
)
E
e min
–
Threshold Irradiance
(
mW/m
2
)
2.0
f = f
o
f =
10 kHz
1.0
0.6
0.5
0.4
0.3
0.2
0.1
0.0
–30 –15
0
15 30
45
60
75
T
amb
–
Ambient Temperature
(
C
)
Sensitivity in dark ambient
1.5
f =
1 kHz
0.5
f =
100
Hz
0.0
0.1
1.0
10.0
100.0
1000.0
DV
sRMS
–
AC Voltage on DC Supply Voltage
(mV)
90
16912
16918
Figure 7. Sensitivity vs. Supply Voltage Disturbances
Figure 10. Sensitivity vs. Ambient Temperature
E
e min
–
Threshold Irradiance
(
mW/m
2
)
2.0
f(E) = f
0
1.6
1.2
0.8
0.4
0.0
0.0
0.4
0.8
1.2
1.6
2.0
E – Field
Strength of Disturbance
(
kV/m
)
S
(
λ
)
rel
-
Relative
Spectral Sensitivity
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
750
850
950
1050
1150
94
8147
18998
λ
-
Wavelength (
nm
)
Figure 8. Sensitivity vs. Electric Field Disturbances
Figure 11. Relative Spectral Sensitivity vs. Wavelength
0.4
E
e min
–
Sensitivity
(
mW/m
2
)
Max. Envelope
Duty Cycle
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
110
17185
0.3
0.2
0.1
f =
38 kHz,
E
e
=
2 mW/m
2
0.0
10
30
50
70
90
0.0
2.0 2.5 3.0 3.5
4.0 4.5
5.0 5.5 6.0
V
S
–
Supply Voltage
(
V
)
16917
Burst
Length (
number of cycles
/ burst )
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
Figure 12. Sensitivity vs. Supply Voltage
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Document Number 82274
Rev. 1.1, 28-Feb-05
TSOP344..SB1BF
Vishay Semiconductors
• Signals from fluorescent lamps with electronic bal-
last with high or low modulation
(see Figure 14 or Figure 15).
0°
10°
20°
30°
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
18549
0.4 0.2
0
0.2
0.4 0.6
d
rel
-
Relative
Transmission Distance
IR Signal
IR Signal
from fluorescent
lamp
with
low modulation
Figure 13. Directivity
0
16920
5
10
Time
(
ms
)
15
20
Suitable Data Format
The circuit of the TSOP344..SB1BF is designed in
that way that unexpected output pulses due to noise
or disturbance signals are avoided. A bandpass filter,
an integrator stage and an automatic gain control are
used to suppress such disturbances.
The distinguishing mark between data signal and dis-
turbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fulfill the following conditions:
• Carrier frequency should be close to center fre-
quency of the bandpass (e.g. 38 kHz).
• Burst length should be 10 cycles/burst or longer.
• After each burst which is between 10 cycles and 35
cycles a gap time of at least 14 cycles is necessary.
• For each burst which is longer than 0.9 ms a corre-
sponding gap time is necessary at some time in the
data stream. This gap time should be at least 7 times
longer than the burst.
• Up to 400 short bursts per second can be received
continuously.
Some examples for suitable data format are: NEC
Code, Toshiba Micom Format, Sharp Code, RC5
Code, R-2000 Code.
When a disturbance signal is applied to the
TSOP344..SB1F it can still receive the data signal.
However the sensitivity is reduced to that level that no
unexpected pulses will occur.
Some examples for such disturbance signals which
are suppressed by the TSOP344..SB1BF are:
• DC light (e.g. from tungsten bulb or sunlight)
• Continuous signal at 38 kHz or at any other fre-
quency
Figure 14. IR Signal from Fluorescent Lamp with low Modulation
IR Signal
from fluorescent
lamp
with high
modulation
IR Signal
0
16921
5
10
Time
(
ms
)
15
20
Figure 15. IR Signal from Fluorescent Lamp with high Modulation
Document Number 82274
Rev. 1.1, 28-Feb-05
www.vishay.com
5