Contents
High-Voltage SMPS Transistors
Insulated Gate Bipolar Transistors (IGBTs)....................................................................................................... 3
Silicon Carbide (SiC) MOSFETs....................................................................................................................... 7
Power MOS 8
™
MOSFETs/FREDFETs............................................................................................................. 8
Ultra-Fast, Low Gate Charge MOSFETs ....................................................................................................... 10
Super Junction MOSFETs ............................................................................................................................. 11
Linear MOSFETs ........................................................................................................................................... 11
Diodes
SiC Schottky Barrier Diodes ......................................................................................................................... 12
Si Schottky Barrier Diodes, Fast and Ultra-Fast Recovery Diodes ................................................................ 12
High-Voltage RF MOSFETs
.................................................................................................................................. 15
High-Frequency RF MOSFETs
............................................................................................................................. 15
Drivers and Driver-RF MOSFET Hybrids
.............................................................................................................. 16
Reference Design Kits
......................................................................................................................................... 16
Power Modules
Power Modules Contents ............................................................................................................................. 17
Standard Electrical Configurations ................................................................................................................ 18
Packaging .................................................................................................................................................... 19
Custom Power Modules ............................................................................................................................... 20
Rugged Custom Power Modules .................................................................................................................. 21
Power Module Part Numbering System ........................................................................................................ 22
IGBT Power Modules ................................................................................................................................... 23
Intelligent Power Modules ............................................................................................................................. 26
MOSFET Power Modules ............................................................................................................................. 27
Renewable Energy Power Modules .............................................................................................................. 31
Power Modules with SiC Schottky Diodes .................................................................................................... 33
SiC MOSFET Power Modules ....................................................................................................................... 35
Diode Power Modules .................................................................................................................................. 36
Package Outlines
................................................................................................................................................ 37
Power Module Outlines
....................................................................................................................................... 38
ASPM
®
, Power MOS 7
®
, and T MAX
®
are registered trademarks of Microsemi Corporation.
2
Insulated Gate Bipolar Transistors (IGBTs)
IGBTs from Microsemi
IGBT products from Microsemi provide high-quality solutions for a wide range of high-voltage, high-power applications. The switching
frequency range spans from DC for minimal conduction loss to 150 kHz for very-high-power-density switch mode power supply
(SMPS) applications. The frequency range for each product type is shown in the following graph. Each IGBT product represents
the latest in IGBT technology, providing the best possible performance/cost combination for the targeted application. There are six
product series that utilize three different IGBT technologies: non-punch-through (NPT), punch-through (PT), and field stop.
IGBT Switching Frequency Ranges (kHz, Hard Switched)
0
20
Field Stop
600 V
Power MOS 8
™
PT
650 V
900 V
Power MOS 8
™
PT
Field Stop
1200 V
Power MOS 7
™
PT
Power MOS 8
™
NPT
Note: Frequency ranges shown are typical for a 50 A IGBT. Refer to product datasheet maximum frequency versus current graph for more information.
40
60
80
100
120
140
160
Power MOS 8
™
NPT (NEW!)
Standard Series
MOS 7
™
MOS 8
™
Field Stop Trench Gate
Voltage Ratings (V)
1200
600, 650, 900, 1200
600, 1200
Technology
PT
PT, NPT
Field Stop
Easy to Parallel
Short Circuit Safe
Operating Area (SOA)
Parameter
Ultra-low gate charge
Highest efficiency
•
•
Lowest conduction loss
Product Options
All standard IGBT products are available as a single IGBT or as a Combi product packaged with an anti-parallel DQ series diode.
Package options include TO-220, TO-247, T-MAX
®
, TO-264, and SOT-227. Customized products are available; contact the factory
for details.
3
IGBTs—Punch-Thru
V
(BR)CES
(V)
POWER MOS 7
™
• Ultra-low gate charge
• Combi with high-speed
DQ diode
1200
Single
3.3
3.3
3.3
3.3
3.3
3.3
Combi (IGBT
& "DQ" FRED)
3.3
3.3
1200
3.3
3.3
3.3
POWER MOS 8
™
• Fast switching
• Highest efficiency
• Combi with high-speed
DQ diode
600
Single
2
2
2
2
2
2
36
44
54
68
80
102
33
46
54
34
57
33
46
54
34
91
57
V
CE(ON)
(V)
Typ 25 °C
I
C2
(A) Maximum I
C
(A)
100 °C at Frequency
20 kHz 40 kHz
19
24
29
28
42
40
12
15
18
18
24
23
APT25GP120BG
APT35GP120BG
APT45GP120BG
APT45GP120J
APT75GP120B2G
APT75GP120J
TO-247
TO-247
TO-247
ISOTOP
T-MAX
®
ISOTOP
TO-247[B]
Part
Number
Package
Style
20 kHz 40 kHz
19
24
29
28
40
12
15
18
18
23
APT25GP120BDQ1G
APT35GP120B2DQ2G
APT45GP120B2DQ2G
APT45GP120JDQ2
APT75GP120JDQ3
TO-247
T-MAX
®
T-MAX
®
ISOTOP
ISOTOP
D3PAK[S]
50 kHz 80 kHz
21
26
30
35
40
51
17
20
23
27
31
39
APT36GA60B
APT44GA60B
APT54GA60B
APT68GA60B
APT80GA60B
APT102GA60B2
TO-247 or D3PAK
TO-247 or D3PAK
TO-247 or D3PAK
TO-247 or D3PAK
TO-247 or D3PAK
T-MAX
®
or TO-264
T-MAX
®
[B2]
25 kHz 50 kHz
2.5
900
2.5
2.5
2.5
Combi (IGBT
& "DQ" FRED)
2
2
600
2
2
2
2
36
44
54
60
68
80
35
43
64
80
17
21
29
34
10
13
19
23
APT35GA90B
APT43GA90B
APT64GA90B
APT80GA90B
TO-247 or D3PAK
TO-247 or D3PAK
TO-247 or D3PAK
TO-247 or D3PAK
TO-264[L]
50 kHz 80 kHz
21
26
30
48
35
40
17
20
23
36
27
31
APT36GA60BD15
APT44GA60BD30
APT54GA60BD30
APT60GA60JD60
APT68GA60B2D40
APT80GA60LD40
TO-247 or D3PAK
TO-247 or D3PAK
TO-247 or D3PAK
ISOTOP
®
T-MAX
®
or TO-264
TO-264
25 kHz 50 kHz
2.5
2.5
900
2.5
2.5
2.5
2.5
27
35
43
46
64
80
14
17
21
33
29
34
8
10
13
21
19
23
APT27GA90BD15
APT35GA90BD15
APT43GA90BD30
APT46GA90JD40
APT64GA90B2D30
APT80GA90LD40
TO-247 or D3PAK
TO-247 or D3PAK
TO-247 or D3PAK
ISOTOP
®
T-MAX
®
or TO-264
TO-264
ISOTOP
®
[J]
SOT-227
C
G
E
Part numbers for D3PAK packages—replace “B” with “S” in part number. Part numbers for TO-264 packages—replace “B2” with “L” in part number.
Current at frequency test conditions: T
j
= 125 °C, Tc = 100 °C except Isotop
®
where Tc = 80 °C, Vcc = 67% rated voltage hard switch.
Datasheets available on www.microsemi.com
All products RoHS-compliant
4
IGBTs—Non-Punch-Thru
V
(BR)CES
(V)
POWER MOS 8
™
• High-speed switching
• Low switching losses
• Easy to parallel
650
1.9
70
Single
1.9
45
V
CE(ON)
(V) I
C2
(A)
Typ 25 °C 100 °C
Maximum I
C
(A)
at Frequency
150 kHz 200 kHz
31
25
APT45GR65B
TO-247
TO-247[B]
Part
Number
Package
Style
100 kHz 150 kHz
52
50 kHz
1.9
95
69
50 kHz
2.5
2.5
2.5
2.5
2.5
1200
2.5
25
25
40
40
50
50
25
25
38
38
48
48
25 kHz
2.5
2.5
2.5
2.5
2.5
2.5
Combi
(IGBT & Diode)
1.9
650
1.9
70
45
70
70
70*
85
85
85*
66
66
42
72
72
46
39
100 kHz
41
80 kHz
21
21
28
28
36
36
50 kHz
42
42
30
46
46
31
APT70GR120B2
APT70GR120L
APT70GR120J
APT85GR120B2
APT85GR120L
APT85GR120J
T-MAX
®
TO-264
ISOTOP
®
T-MAX
®
TO-264
ISOTOP
®
APT25GR120B
APT25GR120S
APT40GR120B
APT40GR120S
APT50GR120B2
APT50GR120L
TO-247
D3PAK
TO-247
D3PAK
T-MAX
®
TO-264
APT95GR65B2
T-MAX
®
APT70GR65B
TO-247
D3PAK[S]
T-MAX
®
[B2]
150 kHz 200 kHz
31
25
APT45GR65BSCD10
TO-247 (SiC SBD)
100 kHz 150 kHz
52
50 kHz
2.5
2.5
2.5
2.5
25
25
25
25
40
40
25
25
25
25
38
38
25 kHz
2.5
2.5
2.5
50*
70*
85*
42
42
46
39
80 kHz
21
21
21
21
28
28
50 kHz
32
30
31
APT50GR120JD30
APT70GR120JD60
APT85GR120JD60
ISOTOP
®
(DQ)
ISOTOP
®
(DQ)
ISOTOP
®
(DQ)
APT25GR120BD15
APT25GR120SD15
APT25GR120SSCD10
APT40GR120B2D30
TO-247 (DQ)
D3PAK (DQ)
D3PAK (SiC SBD)
T-MAX
®
(DQ)
APT70GR65B2SCD30 T-MAX
®
(SiC SBD)
TO-264[L]
APT25GR120BSCD10 TO-247 (SiC SBD)
1200
2.5
2.5
APT40GR120B2SCD10 T-MAX
®
(SiC SBD)
ISOTOP
®
[J]
SOT-227
C
G
E
Part numbers for D3PAK packages—replace “B” with “S” in part number. Part numbers for TO-264 packages—replace “B2” with “L” in part number.
Current at frequency test conditions: T
j
= 125 °C, Tc = 100 °C except Isotop
®
where Tc = 80 °C, Vcc = 67% rated voltage hard switch.
Datasheets available on www.microsemi.com
All products RoHS-compliant
5
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
