KM616S2000 Family
Document Title
128K x16 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0
1.0
History
Initial Draft
Finalize
- Change operation voltage:
Vcc=2.3~3.3V
→
Vcc=2.3~2.7V
- Release operating current
I
CC
=2mA
→
5mA
I
CC1
Read/Write=3/15mA
→
5/20mA
Draft Data
October 1, 1997
August 27, 1998
Remark
Preliminary
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
Revision 1.0
August 1998
KM616S2000 Family
128K x16 bit Low Power and Low Voltage CMOS Static RAM
FEATURES
•
Process Technology : TFT
•
Organization :128Kx16
•
Power Supply Voltage
KM616S2000 Family : 2.3~2.7V
•
Low Data Retention Voltage : 2V(Min)
•
Three state output and TTL Compatible
•
Package Type : 44-TSOP2 -400F
CMOS SRAM
GENERAL DESCRIPTION
The KM616S2000 families are fabricated by SAMSUNG′s
advanced CMOS process technology. The families support
various operating temperature ranges and small package
for user flexibility of system design. The families also sup-
port low data retention voltage for battery back-up operation
with low data retention current.
PRODUCT FAMILY
Power Dissipation
Produc Family
Operating Temperature
Vcc Range
Speed(ns)
Standby
(I
SB1
, Max)
10µA
15µA
Operating
(I
CC2
,Max)
45mA
PKG Type
KM616S2000L-L
KM616S2000LI-L
Commercial(0~70°C)
Industrial(-40~85°C)
2.3~2.7V
120
1)
/150ns
44-TSOP2-F
1. The parameter is measured with 30pF test load.
PIN DESCRIPTION
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A16
A15
A14
A13
A12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
N.C
A8
A9
A10
A11
N.C
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
A0
A1
A2
A3
A4
A5
A6
A7
A8
A16
I/O
1
~I/O
8
Precharge circuit.
Vcc
Vss
Row
select
Memory array
1024 rows
128×16 columns
44-TSOP2
Forward
Data
cont
Data
cont
Data
cont
I/O Circuit
Column select
I/O
9
~I/O
16
Name
CS
OE
WE
UB
LB
Function
Chip Select Input
Output Enable Input
Write Enable Input
Upper Block Select Input
Lower Block Select Input
Name
Function
A9 A10 A11 A12 A13 A14 A15
I/O
1
~I/O
16
Data Inputs/Outputs
A
0
~A
16
Vcc
Vss
N.C
Address Inputs
Power
Ground
No Connection
CS
OE
UB
LB
WE
Control
logic
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
Revision 1.0
August 1998
KM616S2000 Family
PRODUCT LIST
Commercial Temperature Product(0~70°C)
Part Name
KM616S2000LT-12L
KM616S2000LT-15L
Function
44-TSOP2, 120ns, 2.3~2.7V, LL
44-TSOP2, 150ns, 2.3~2.7V, LL
CMOS SRAM
Industrial Temperature Products(-40~85°C)
Part Name
KM616S2000LTI-12L
KM616S2000LTI-15L
Function
44-TSOP2, 120ns, 2.3~2.7V, LL
44-TSOP2, 150ns, 2.3~2.7V, LL
Note : LL - Low Low Standby Current
FUNCTIONAL DESCRIPTION
CS
H
L
L
L
L
L
L
L
L
OE
X
1)
H
X
1)
L
L
L
X
1)
X
1)
X
1)
WE
X
1)
H
X
1)
H
H
H
L
L
L
LB
X
1)
X
1)
H
L
H
L
L
H
L
UB
X
1)
X
1)
H
H
L
L
H
L
L
I/O
1~8
High-Z
High-Z
High-Z
Dout
High-Z
Dout
Din
High-Z
Din
I/O
9~16
High-Z
High-Z
High-Z
High-Z
Dout
Dout
High-Z
Din
Din
Mode
Deselected
Output Disabled
Output Disabled
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
Power
Standby
Active
Active
Active
Active
Active
Active
Active
Active
1. X means don′t care. (Must be in low or high state)
ABSOLUTE MAXIMUM RATINGS
1)
Item
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Storage temperature
Operating Temperature
Soldering temperature and time
Symbol
V
IN
,V
OUT
V
CC
P
D
T
STG
T
A
T
SOLDER
Ratings
-0.5 to V
CC
+0.5
-0.3 to 4.6
1.0
-65 to 150
0 to 70
-40 to 85
260°C, 10sec (Lead Only)
Unit
V
V
W
°C
°C
°C
-
Remark
-
-
-
-
KM616S2000L
KM616S2000LI
-
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Revision 1.0
August 1998
KM616S2000 Family
RECOMMENDED DC OPERATING CONDITIONS
1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
Symbol
Vcc
Vss
V
IH
V
IL
Product
KM616S2000 Family
All Family
KM616S2000 Family
KM616S2000 Family
Min
2.3
0
2.0
-0.3
3)
Typ
2.5
0
-
-
CMOS SRAM
Max
2.7
0
Vcc+0.3
2)
0.6
Unit
V
V
V
V
Note:
1. Commercial Product : T
A
=0 to 70°C, otherwise specified
Industrial Product : T
A
=-40 to 85°C, otherwise specified
2. Overshoot : Vcc+1.0V in case of pulse width
≤
20ns
3. Undershoot : -1.0V in case of pulse width
≤
20ns
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE
1)
(f=1MHz, T
A
=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
8
10
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Operating power supply current
Average operating current
Symbol
I
LI
I
LO
I
CC
I
CC1
I
CC2
Output low voltage
Output high voltage
Standby Current(TTL)
Standby Current (CMOS)
1. KM616S2000I Family =15µA
Test Conditions
V
IN
=Vss to Vcc
CS=V
IH
or OE=V
IH
or WE=V
IL
, V
IO
=Vss to Vcc
I
IO
=0mA, CS=V
IL
, V
IN
=V
IL
or V
IH,
Read
Cycle time=1µs, 100% duty I
IO
=0mA,
CS≤0.2V, V
IN
≤0.2V
or V
IN
≥Vcc-0.2V
Cycle time=Min, 100% duty
I
OL
=0.5mA at 2.3~2.7V
I
OH
=-0.5mA
CS=V
IH
, Other inputs=V
IL
or V
IH
CS≥Vcc-0.2V, Other inputs=0~Vcc
Read
Write
Min
-1
-1
-
-
-
-
-
2.0
-
-
Typ
-
-
-
-
-
-
-
-
-
-
Max
1
1
5
5
20
45
0.4
-
0.3
10
1)
Unit
µA
µA
mA
mA
mA
V
V
mA
µA
V
OL
V
OH
I
SB
I
SB1
Revision 1.0
August 1998
KM616S2000 Family
AC OPERATING CONDITIONS
TEST CONDITIONS
(Test Load and Test Input/Output Reference)
Input pulse level : 0.4 to 2.2V
Input rising and falling time : 5ns
Input and output reference voltage : 1.5V
Output load (See right) :C
L
=100pF+1TTL
C
L
1)
=30pF+1TTL
1. Refer to AC CHARACTERISTICS
CMOS SRAM
C
L
1
)
1. Including scope and jig capacitance
AC CHARACTERISTICS
(Vcc=2.3~2.7V, KM616S2000 Family : T
A
=0 to 70°C, KM616S2000I Family : T
A
=-40 to 85°C)
Speed Bins
Parameter List
Symbol
Min
Read cycle time
Address access time
Chip select to output
Output enable to valid output
Byte enable to valid output
Read
Chip select to low-Z output
Output enable to low-Z output
UB, LB enable to low-Z output
Output hold from address change
Chip disable to high-Z output
Output disable to high-Z output
UB, LB disable to high-Z output
Write cycle time
Chip select to end of write
Address set-up time
Address valid to end of write
UB, LB valid to end of write
Write
Write pulse width
Write recovery time
Write to output high-Z
Data to write time overlap
Data hold from write time
End write to output low-Z
1. The parameter is measured with 30pF test load.
120
1)
ns
Max
-
120
120
60
60
-
-
-
-
35
35
35
-
-
-
-
-
-
-
30
-
-
-
Min
150
-
-
-
-
20
10
10
15
0
0
0
150
120
0
120
120
100
0
0
60
0
5
150ns
Max
-
150
150
75
75
-
-
-
-
40
40
40
-
-
-
-
-
-
-
40
-
-
-
Units
t
RC
t
AA
t
CO
t
OE
t
BA
t
LZ
t
OLZ
t
BLZ
t
OH
t
HZ
t
OHZ
t
BHZ
t
WC
t
CW
t
AS
t
AW
t
BW
t
WP
t
WR
t
WHZ
t
DW
t
DH
t
OW
120
-
-
-
-
20
10
10
15
-
-
-
120
100
0
100
100
80
0
0
50
0
5
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
DATA RETENTION CHARACTERISTICS
Item
Vcc for data retention
Data retention current
Data retention set-up time
Recovery time
Symbol
V
DR
I
DR
t
SDR
t
RDR
Test Condition
CS≥Vcc-0.2V
Vcc=2.0V, CS≥Vcc-0.2V
See data retention waveform
Min
2.0
-
0
5
Typ
-
-
-
-
Max
2.7
10
-
-
Unit
V
µA
ms
Revision 1.0
August 1998
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