电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

JANSH2N7261U

产品描述Power Field-Effect Transistor, 8A I(D), 100V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
产品类别分立半导体    晶体管   
文件大小304KB,共27页
制造商Infineon(英飞凌)
官网地址http://www.infineon.com/
下载文档 详细参数 选型对比 全文预览

JANSH2N7261U概述

Power Field-Effect Transistor, 8A I(D), 100V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18

JANSH2N7261U规格参数

参数名称属性值
是否Rohs认证不符合
包装说明CHIP CARRIER, R-CQCC-N15
Reach Compliance Codecompli
ECCN代码EAR99
其他特性HIGH RELIABILITY
雪崩能效等级(Eas)130 mJ
外壳连接SOURCE
配置SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压100 V
最大漏极电流 (Abs) (ID)8 A
最大漏极电流 (ID)8 A
最大漏源导通电阻0.24 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
JESD-30 代码R-CQCC-N15
JESD-609代码e0
元件数量1
端子数量15
工作模式ENHANCEMENT MODE
最高工作温度150 °C
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装形状RECTANGULAR
封装形式CHIP CARRIER
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型N-CHANNEL
最大功率耗散 (Abs)25 W
最大脉冲漏极电流 (IDM)32 A
认证状态Qualified
参考标准MIL-19500/601
表面贴装YES
端子面层Tin/Lead (Sn/Pb)
端子形式NO LEAD
端子位置QUAD
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用SWITCHING
晶体管元件材料SILICON
Base Number Matches1

文档预览

下载PDF文档
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 17 July 2013.
INCH-POUND
MIL-PRF-19500/601K
17 April 2013
SUPERSEDING
MIL-PRF-19500/601J
14 March 2012
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, FIELD EFFECT POWER
TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7261 AND 2N7262 U AND U5 SUFFIXES, JANTXV,
AND RADIATION HARDENED TYPE SUFFIXES, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and
MIL-PRF-19500.
1. SCOPE
* 1.1 Scope. This specification covers the performance requirements for an N-channel, enhancement-mode,
MOSFET, radiation hardened and non-hardened, power transistors. Two levels of product assurance are provided
for each device type as specified in
MIL-PRF-19500,
with avalanche energy maximum rating (E
AS
) and maximum
avalanche current (I
AS
). See
6.5
for JANHC and JANKC die versions.
1.2 Physical dimensions. See
figure 1
(TO-205AF) and
figure 2
(LCC).
1.3 Maximum ratings. Unless otherwise specified, T
A
= +25°C.
Type
(1)
R
θJC
(3)
R
θJA
T
J
and
T
STG
*
P
T
(2)
P
T
T
C
= +25°C T
A
= +25°C
(free air)
W
W
0.71
0.71
V
DS
and
V
DG
V
GS
I
D1
I
D2
(4) (5)
(4) (5)
T
C
= +25°C T
C
= +100°C
I
S
I
DM
(6)
°C/W
5.0
5.0
°C/W
175
175
V dc
100
200
V dc
±20
±20
A dc
8.0
5.5
A dc
5.0
3.5
A dc
8.0
5.5
A(pk)
32
22
°C
-55 to +150
-55 to +150
2N7261
2N7262
25
25
(1) Unless otherwise specified, electrical characteristics, ratings, and conditions for “U” and “U5” suffix devices
(surface mount LCC) are identical to the corresponding non “U” and “U5” suffix devices.
(2) Derate linearly 0.2 W/°C for T
C
> +25°C.
(3) See
figure 3,
thermal impedance curves.
(4) The following formula derives the maximum theoretical I
D
limit. I
D
is limited by package and internal wires
and may be limited by pin diameter:
T
JM
- T
C
I
D
=
(
R
θ
JC
)
x
(
R
DS
( on ) at T
JM
)
(5) See
figure 4,
maximum drain current graph.
(6) I
DM
= 4 X I
D1
as calculated in note (4).
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dla.mil.
Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at
https://assist.dla.mil/.
AMSC N/A
FSC 5961

JANSH2N7261U相似产品对比

JANSH2N7261U
描述 Power Field-Effect Transistor, 8A I(D), 100V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
是否Rohs认证 不符合
包装说明 CHIP CARRIER, R-CQCC-N15
Reach Compliance Code compli
ECCN代码 EAR99
其他特性 HIGH RELIABILITY
雪崩能效等级(Eas) 130 mJ
外壳连接 SOURCE
配置 SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 100 V
最大漏极电流 (Abs) (ID) 8 A
最大漏极电流 (ID) 8 A
最大漏源导通电阻 0.24 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 R-CQCC-N15
JESD-609代码 e0
元件数量 1
端子数量 15
工作模式 ENHANCEMENT MODE
最高工作温度 150 °C
封装主体材料 CERAMIC, METAL-SEALED COFIRED
封装形状 RECTANGULAR
封装形式 CHIP CARRIER
峰值回流温度(摄氏度) NOT SPECIFIED
极性/信道类型 N-CHANNEL
最大功率耗散 (Abs) 25 W
最大脉冲漏极电流 (IDM) 32 A
认证状态 Qualified
参考标准 MIL-19500/601
表面贴装 YES
端子面层 Tin/Lead (Sn/Pb)
端子形式 NO LEAD
端子位置 QUAD
处于峰值回流温度下的最长时间 NOT SPECIFIED
晶体管应用 SWITCHING
晶体管元件材料 SILICON
Base Number Matches 1

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2687  1911  2586  2188  551  13  10  7  55  30 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved