NVTFS5124PL
Power MOSFET
Features
−60
V,
−6
A, 260 mW, Single P−Channel
•
•
•
•
•
•
Small Footprint (3.3 x 3.3 mm) for Compact Design
Low R
DS(on)
to Minimize Conduction Losses
Low Q
G
and Capacitance to Minimize Driver Losses
NVTFS5124PLWF
−
Wettable Flanks Product
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
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V
(BR)DSS
−60
V
R
DS(on)
MAX
260 mW @
−10
V
380 mW @
−4.5
V
I
D
MAX
−6
A
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent R
YJ−mb
(Notes 1,
2, 3, 4)
Power Dissipation
R
YJ−mb
(Notes 1, 2, 3)
Continuous Drain Cur-
rent R
qJA
(Notes 1, 3,
4)
Power Dissipation
R
qJA
(Notes 1, 3)
Pulsed Drain Current
T
mb
= 25°C
Steady
State
T
mb
= 100°C
T
mb
= 25°C
T
mb
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
, T
stg
I
S
E
AS
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
−60
±20
−6.0
−4.0
18
9.0
−2.4
−1.7
3.0
1.5
−24
−55
to
+175
−18
8.5
A
°C
A
mJ
W
1
Unit
V
V
A
P−Channel MOSFET
D (5−8)
G (4)
W
S (1,2,3)
A
MARKING DIAGRAM
1
WDFN8
(m8FL)
CASE 511AB
XXXX
A
Y
WW
G
S
S
S
G
XXXX
AYWWG
G
D
D
D
D
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
=
−50
V, V
GS
=
−10
V,
I
L(pk)
=
−13
A, L = 0.1 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
T
L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS
(Note 1)
Parameter
Junction−to−Mounting Board (top)
−
Steady
State (Note 2 and 3)
Junction−to−Ambient
−
Steady State (Note 3)
Symbol
R
YJ−mb
R
qJA
Value
8.4
49.2
Unit
°C/W
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2013
May, 2013
−
Rev. 2
1
Publication Order Number:
NVTFS5124PL/D
NVTFS5124PL
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
(BR)DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
V
GS
=
−10
V, V
DS
=
−48
V,
I
D
=
−3
A
V
GS
=
−4.5
V, V
DS
=
−48
V,
I
D
=
−3
A
V
GS
= 0 V, f = 1.0 MHz,
V
DS
=
−25
V
V
GS
= 0 V, I
D
=
−250
mA
V
GS
= 0 V,
V
DS
=
−60
V
T
J
= 25°C
T
J
= 125°C
−60
−1.0
−10
"100
nA
V
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
"20
V
V
GS
= V
DS
, I
D
=
−250
mA
V
GS
=
−10
V, I
D
=
−3
A
V
GS
=
−4.5
V, I
D
=
−3
A
V
DS
=
−15
V, I
D
=
−5
A
4
−1.5
200
290
−2.5
260
380
V
mW
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
S
250
27
17
3.5
0.4
1.2
1.9
6
nC
pF
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V,
dI
S
/dt = 100 A/ms,
I
S
=
−3
A
V
GS
= 0 V,
I
S
=
−3
A
T
J
= 25°C
T
J
= 125°C
V
GS
=
−4.5
V, V
DS
=
−48
V,
I
D
=
−3
A, R
G
= 2.5
W
7
14
13
10
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
−0.87
−0.74
17
14
3
19
nC
ns
−1.0
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
5. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NVTFS5124PL
TYPICAL CHARACTERISTICS
8
T
J
= 25°C
−I
D
, DRAIN CURRENT (A)
6
−10
V
−4.0
V
4
−3.5
V
2
V
GS
=
−3
V
−4.5
V
−I
D
, DRAIN CURRENT (A)
6
8
V
DS
≥
−10
V
4
2
T
J
= 25°C
T
J
= 125°C
1
2
T
J
=
−55°C
3
4
5
6
0
0
1
2
3
4
5
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
0
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.50
I
D
=
−3
A
T
J
= 25°C
0.40
0.50
T
J
= 25°C
0.40
V
GS
=
−4.5
V
0.30
0.30
0.20
0.20
V
GS
=
−10
V
0.10
0.10
2
4
6
8
10
12
14
−I
D
, DRAIN CURRENT (A)
2
4
6
8
10
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.2
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
−50
−25
0
25
50
75
100
125
150
175
10
V
GS
=
−10
V
I
D
=
−3
A
−I
DSS
, LEAKAGE (nA)
1000
10000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
100
T
J
= 125°C
10
20
30
40
50
60
T
J
, JUNCTION TEMPERATURE (°C)
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NVTFS5124PL
TYPICAL CHARACTERISTICS
10
−V
GS
, GATE−TO−SOURCE VOLTAGE
(V)
300
C, CAPACITANCE (pF)
C
iss
200
V
GS
= 0 V
T
J
= 25°C
Q
T
8
6
4
2
0
0
Q
gs
Q
gd
V
DS
=
−48
V
I
D
=
−3
A
T
J
= 25°C
2
4
Q
g
, TOTAL GATE CHARGE (nC)
6
100
C
oss
0
C
rss
0
10
20
30
40
50
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
60
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
30
−I
S
, SOURCE CURRENT (A)
V
GS
= 0 V
T
J
= 25°C
20
1000.0
V
DD
=
−48
V
I
D
=
−3
A
V
GS
=
−10
V
t, TIME (ns)
100.0
t
d(off)
10.0
t
r
t
f
t
d(on)
10
R
G
, GATE RESISTANCE (W)
100
10
1.0
1
0
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 11. Diode Forward Voltage vs. Current
1000
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
V
GS
=
−10
V
Single Pulse
T
C
= 25°C
1 ms
10
10 ms
100
ms
10
ms
10
I
D
=
−13
A
8
6
4
2
0
−I
D
, DRAIN CURRENT (A)
100
1
R
DS(on)
Limit
Thermal Limit
Package Limit
dc
0.1
0.1
1
10
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
100
25
50
75
100
125
150
T
J
, STARTING JUNCTION TEMPERATURE (°C)
175
Figure 10. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
NVTFS5124PL
TYPICAL CHARACTERISTICS
100
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
1
0.01
Single Pulse
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
R
qJA(t)
(°C/W)
10
Figure 13. Thermal Response
PULSE TIME (sec)
DEVICE ORDERING INFORMATION
Device
NVTFS5124PLTAG
NVTFS5124PLWFTAG
NVTFS5124PLTWG
NVTFS5124PLWFTWG
Marking
5124
24LW
5124
24LW
Package
WDFN8
(Pb−Free)
WDFN8
(Pb−Free)
WDFN8
(Pb−Free)
WDFN8
(Pb−Free)
Shipping
†
1500 / Tape & Reel
1500 / Tape & Reel
5000 / Tape & Reel
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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