NCN5150
Wired M-BUS Slave
Transceiver
Description
The NCN5150 is a single-chip integrated slave transceiver for use in
two-wire Meter Bus (M-BUS) slave devices and repeaters. The
transceiver provides all of the functions needed to satisfy the
European Standards EN 13757−2 and EN 1434−3 describing the
physical layer requirements for M-BUS. It includes a programmable
power level of up to 2 (SOIC version) or 6 (NQFP version) unit loads,
which are available for use in external circuits through a 3.3 V LDO
regulator.
The NCN5150 can provide communication up to the maximum
M-BUS communication speed of 38,400 baud (half-duplex).
Features
www.onsemi.com
NQFP−20
MN SUFFIX
CASE 485E
SOIC−16
D SUFFIX
CASE 751B
•
Single-chip MBUS Transceiver
•
UART Communication Speeds Up to 38,400 baud
•
Integrated 3.3 V VDD LDO Regulator with Extended Peak Current
•
•
•
•
•
•
•
•
•
•
•
MARKING DIAGRAMS
20
1
NCN
5150
ALYW
G
NQFP−20
16
NCN5150
ALYYWWG
1
SOIC−16
A
L
Y, YY
W, WW
G or
G
= Assembly Location
= Wafer Lot (optional)
= Year
= Work Week
= Pb-free Package
Capability of 15 mA
Supports Powering Slave Device from the Bus or from External
Power Supply
Adjustable I/O Levels
Adjustable Constant Current Sink up to 2 or 6 Unit Loads Depending
on the Package
Low Bus Voltage Operation
Extended Current Budget for External Circuits: at least 0.88 mA
Polarity Independent
Power-Fail Function
Fast Startup
−
No External Transistor Required on STC Pin
Industrial Ambient Temperature Range of
−40°C
to +85°C
Available in:
♦
16-pin SOIC (Pin-to-Pin Compatible with TSS721A)
♦
20-pin QFN
These are Pb-free Devices
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
Typical Applications
♦
♦
♦
♦
•
Multi-energy Utility Meters
Water
Gas
Electricity
Heating systems
Related Standards
−
European Standard
EN 13757−2, EN 1434−3
For more information visit www.m-bus.com
©
Semiconductor Components Industries, LLC, 2015
September, 2017
−
Rev. 4
1
Publication Order Number:
NCN5150/D
NCN5150
VDD
BUSL2
VB
15
14 VS
NCN5150
QFN20
13 VIO
12 TX
11
6
STC
7
RIDD
8
PFb
9
SC
10
TXI
PFb
SC
TXI
TX
5
6
7
8
STC
RIDD
1
2
3
4
16
15
14
13
12
11
10
9
BUSL1
GND
RIS
RXI
RX
VDD
VS
VIO
RIS
RXI
RX
17
20
GND
BUSL1
BUSL2
VB
1
2
3
4
5
19
18
16
NCN5150
SOIC16
Figure 1. Pin Out NCN5150 in 20-pin NQFP and 16 Pin SOIC (Top View)
Table 1. NCN5150 PINOUT
Pin Number
Signal Name
BUSL1
BUSL2
VB
STC
RIDD
PFb
SC
TXI
TX
VIO
VS
VDD
RX
RXI
RIS
GND
NC
EP
Type
Bus
Bus
Power
Output
Input
Output
Output
Output
Output
Input
Output
Power
Input
Input
Input
Ground
NC
Ground
NCN5150 SOIC
16
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
−
−
NCN5150 QFN
2
3
4
6
7
8
9
11
12
13
14
16
17
18
20
1
5, 10, 15, 19
EP
Pin Description
MBUS line. Connect to bus through 220
W
series resistors.
Connections are polarity independent
Rectified bus voltage
Storage capacitor pin. Connect to bulk storage capacitor
(minimum 10
mF,
maximum 330
mF−2,700 mF
−
see Table 9)
Mark current adjustment pin.
Connect to programming resistor
Power Fail, active low
Mark bus voltage level storage capacitor pin.
Connect to ceramic capacitor (typically 220 nF)
UART Data output (inverted)
UART Data output
I/O pins (RX, RXI, TX, TXI, PFb) high level voltage
Gate driver for PMOS switch between bus powered operation
and external power supply
Voltage regulator output.
Connect to minimum 1
mF
decoupling capacitor
UART Data input
UART Data input (inverted)
Modulation current adjustment pin
Ground
Not connected pins. Tie to GND
Exposed Pad. Tie to GND
www.onsemi.com
2
NCN5150
PFb
VIO
VIO
Buffer
VIO_BUF
Power
Fail
Detect
VB_INT
BUSL1
VB
CS1
BUSL2
RIDD
VIO_BUF
SC
STC
STC
Voltage
Monitor
ECHO
Receiver
TX
TXI
RXI
VS
VS
Driver
VDD
3.3 V
LDO
STC
Clamp
Transmitter
CS_TX
RX
POR
Thermal
Shutdown
RIS
GND
NCN5150
Figure 2. NCN5150 Block Diagram
Table 2. ABSOLUTE MAXIMUM RATINGS
(Note 1)
Symbol
T
J
T
S
V
BUS
V
TX
, V
TXI
V
RX
, V
RXI
, V
IO
ESD
HBM
ESD
MM
ESD
CDM
Junction Temperature
Storage Temperature
Bus Voltage (|BUSL1
−
BUSL2|)
Voltage on Pin TX, TXI
Voltage on Pin RX, RXI, VIO
ESD Rating
−
Human Body Model
ESD Rating
−
Machine Model
ESD Rating
−
Charged Device Model
Parameter
Min
−40
−55
−50
−0.3
−0.3
4.0
250
750
Max
+150
+150
50
7.5
5.5
−
−
−
Unit
°C
°C
V
V
V
kV
V
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. All voltages are referenced to GND.
www.onsemi.com
3
NCN5150
Table 3. THERMAL CHARACTERISTICS
Rating
Thermal Characteristics, SOIC−16
−
Thermal Resistance, Junction-to-Air
Thermal Characteristics, QFN−20
−
Thermal Resistance, Junction-to-Air
Symbol
R
θJA
R
θJA
Typical Value
125
42
Unit
°C/W
°C/W
NOTE: R
qJA
obtained with 1S0P (SOIC) or 2S2P (QFN) test boards according to JEDEC JESD51 standard.
Table 4. RECOMMENDED OPERATING CONDITIONS
(Notes 2 and 3)
Symbol
T
A
V
BUS
V
IO
Ambient Temperature
Bus Voltage (|V
BUSL1
−
V
BUS2
|)
VIO Pin Voltage (Note 4)
1−2 Unit Loads
3−6 Unit Loads
Parameter
Min
−40
9.2
9.7
2.5
Max
+85
42
42
3.8
Unit
°C
V
V
V
2. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
3. All voltages are referenced to GND.
4. V
STC
must be at least 1V higher than V
IO
for proper operation.
Table 5. ELECTRICAL CHARACTERISTICS
(Note 5)
Symbol
DV
BR
DV
CS
I
BUS
Voltage drop over CS1
(V
B
−
V
STC
)
Total Current Drawn from the Bus, Mark
State
Parameter
Voltage drop over bus rectifier (V
BUS
−
V
B
) (R
IDD
(Note 6) = 4.02 kW)
R
IDD
(Note 6)
≥
13 kW
R
IDD
(Note 6)
≤
4.02 kW
R
IDD
(Note 6) = 30 kW
R
IDD
(Note 6) = 13 kW
R
IDD
(Note 6, 7) = 8.45 kW
R
IDD
(Note 6, 7) = 6.19 kW
R
IDD
(Note 6, 7) = 4.87 kW
R
IDD
(Note 6, 7) = 4.02 kW
DI
BUS
I
STC
Bus Current Stability (over
DV
BUS
= 10 V, RX/RXI = mark)
Idle Current Available for the Application
to Draw from STC and V
DD
(Including
Current Drawn from IO Pins)
R
IDD
(Note 6) = 30 kW
R
IDD
(Note 6) = 13 kW
R
IDD
(Note 6, 7) = 8.45 kW
R
IDD
(Note 6, 7) = 6.19 kW
R
IDD
(Note 6, 7) = 4.87 kW
R
IDD
(Note 6, 7) = 4.02 kW
DI
STC, space
I
CC
I
IO
V
STC, clamp
V
B, PFb
V
PFb, OH
V
PFb, OL
V
RIDD
V
VS, OH
R
VS, PD
5.
6.
7.
8.
9.
Min
−
1.30
1.70
−
−
−
−
−
−
−
0.88
2.10
3.10
4.20
5.30
6.50
−
−
−0.5
6.0
V
STC
+ 0.3
V
IO
−
0.6
0
1.15
V
STC
−
0.4
50
Typ
−
−
−
1.32
2.71
4.10
5.50
6.80
8.22
0.2
1.05
2.35
3.60
4.80
6.10
7.45
200
359
−
6.5
−
−
−
1.20
−
100
Max
1.25
−
−
1.50
3.00
4.50
6.00
7.50
9.00
2
1.20
2.60
4.00
5.40
6.90
8.40
−
500
0.5
7.0
V
STC
+ 0.8
V
IO
0.6
1.25
V
STC
150
Unit
V
V
mA
%
mA
Additional Current Available for the Application when Transmitting a
Space
Internal Supply Current (R
IDD
(Note 6) = 13 kW, RX/RXI = mark)
Current Drawn by the V
IO
Pin
Clamp Voltage on Pin STC (I
DD
< I
STC
)
Threshold Voltage on V
B
to Trigger PFb (Note 8)
PFb Voltage High (I
PFb
=
−100
mA)
PFb Voltage Low (Note 9) (I
PFb
= 50
mA)
Voltage on RIDD Pin
Voltage on VS during High State
(V
STC
> V
STC, VDD ON
, I
VS
=
−5
mA)
Pull-down Resistor on VS during Low State
(V
DD
> 2 V, V
STC
> V
S
)
mA
mA
mA
V
V
V
V
V
V
kW
All voltages are referenced to GND.
Resistor with 1% accuracy.
Only possible in NQFP variant.
PFb comparator has a 70 mV hysteresis.
PFb pin is pulled down with an on-chip resistor of typically 2 MW.
www.onsemi.com
4
NCN5150
Table 6. VDD REGULATOR ELECTRICAL CHARACTERISTICS
(Note 10)
Symbol
V
DD
I
DD
I
DD, OFF
V
POR, ON
V
POR, OFF
V
STC, VDD ON
V
STC, VDD OFF
Parameter
Voltage on V
DD
(Note 11 ) (I
DD
< 15 mA)
Peak Current that can be Supplied by V
DD
(Note 12)
V
BUS
= 0 V, V
STC
= 0 V
Power-on Reset Threshold, Release
Power-on Reset Threshold, Reset
Threshold Voltage on Pin STC to Turn On V
DD
Regulator, Pull
the VS Pin High and Enable the PF Function
Threshold Voltage on Pin STC to Turn Off V
DD
Regulator and
Pull the PFb and VS Pins Low
Min
3.1
15
−0.5
2.65
2.55
5.6
3.7
Typ
3.3
−
−
2.85
2.75
6.0
4.0
Max
3.6
−
0.5
3.15
3.00
6.4
4.3
Unit
V
mA
mA
V
V
V
V
10.
All voltages are referenced to GND.
11.
Including output resistance of V
DD
.
12.
Average current draw limited by I
STC
.
Table 7. RECEIVER ELECTRICAL CHARACTERISTICS
(Note 13)
Symbol
V
T
V
SC
I
SC, charge
I
SC, discharge
CDR
V
TX, OH
,
V
TXI, OH
V
TX, OL
,
V
TXI, OL
I
TX
, I
TXI
Parameter
Receiver Threshold Voltage
Mark Level Storage Capacitor Voltage
Mark Level Storage Capacitor Charge Current
Mark Level Storage Capacitor Discharge Current
Charge/Discharge Current Ratio
TX/TXI High-level Voltage (I
TX
/I
TXI
=
−100
mA)
(Note 14)
TX/TXI Low-level Voltage
V
TX
= 7.5 V, V
STC
= 6 V
(I
TX
/I
TXI
= 100
mA)
(I
TX
= 1.1 mA)
Min
V
SC
−
8.2
−
−40
0.3
30
V
IO
−
0.6
0
0
0
Typ
−
−
−25
0.6
40
−
−
−
−
Max
V
SC
−
5.7
V
B
−15
−0.033
×
I
SC, charge
−
V
IO
0.35
1.5
16
V
V
V
mA
Unit
V
V
mA
mA
13.
All voltages are referenced to GND.
14.
V
STC
must be at least 1 V higher than V
IO
for proper operation.
Table 8. TRANSMITTER ELECTRICAL CHARACTERISTICS
(Note 15)
Symbol
I
MC
V
RIS
V
RX, IH
, V
RXI, IH
V
RX, IL
, V
RXI, IL
I
RX
, I
RXI
Voltage on RIS Pin
RX/RXI Input High
RX/RXI Input Low
Current Drawn or Sourced from RX/RXI Pins (Note 17)
(V
IO
= 3 V)
Parameter
Space Level Modulating Current (R
RIS
= 100
W
(Note 16))
Min
12.5
1.2
V
IO
−
0.8
0
±6
Typ
15.0
1.4
−
−
−
Max
18.0
1.6
5.5
0.8
±30
Unit
mA
V
V
V
mA
15. All voltages are referenced to GND.
16. Resistor with 1% accuracy.
17. Including internal pull-up resistor on RX and internal pull-down resistor on RXI.
www.onsemi.com
5
ARM技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
