Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-39
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 包装说明 | CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code | compli |
| ECCN代码 | EAR99 |
| 最大集电极电流 (IC) | 0.5 A |
| 基于收集器的最大容量 | 25 pF |
| 集电极-发射极最大电压 | 50 V |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 100 |
| JEDEC-95代码 | TO-39 |
| JESD-30 代码 | O-MBCY-W3 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 200 °C |
| 封装主体材料 | METAL |
| 封装形状 | ROUND |
| 封装形式 | CYLINDRICAL |
| 极性/信道类型 | NPN |
| 最大功率耗散 (Abs) | 0.8 W |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | WIRE |
| 端子位置 | BOTTOM |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 50 MHz |
| VCEsat-Max | 0.4 V |
| Base Number Matches | 1 |
| 2N2049 | 2N2193 | 2N2102 | 2N2218A | 2N1987 | 2N1989 | 2N1990 | 2N2194 | 2N2195 | 2N1988 | |
|---|---|---|---|---|---|---|---|---|---|---|
| 描述 | Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-39 | Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-39 | Small Signal Bipolar Transistor, 1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, | Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, | Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-39 | Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-39 | Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-39 | Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-39 | Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-39 | Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-39 |
| 是否Rohs认证 | 不符合 | 不符合 | 符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 包装说明 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code | compli | compli | compli | compli | compli | compli | compli | compli | compli | compli |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小直流电流增益 (hFE) | 100 | 15 | 10 | 25 | 20 | 20 | 20 | 12 | 20 | 35 |
| JEDEC-95代码 | TO-39 | TO-39 | TO-39 | TO-39 | TO-39 | TO-39 | TO-39 | TO-39 | TO-39 | TO-39 |
| JESD-30 代码 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| 最高工作温度 | 200 °C | 200 °C | 200 °C | 200 °C | 150 °C | 150 °C | 150 °C | 200 °C | 200 °C | 150 °C |
| 封装主体材料 | METAL | METAL | METAL | METAL | METAL | METAL | METAL | METAL | METAL | METAL |
| 封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| 封装形式 | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| 极性/信道类型 | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN |
| 最大功率耗散 (Abs) | 0.8 W | 0.8 W | 1 W | 0.8 W | 0.6 W | 0.6 W | 0.6 W | 0.8 W | 0.6 W | 0.6 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO | NO | NO |
| 端子形式 | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| VCEsat-Max | 0.4 V | 0.35 V | 0.5 V | 1 V | 1.5 V | 2 V | 0.5 V | 0.35 V | 0.35 V | 2 V |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | - | - | EAR99 | - | EAR99 |
| 最大集电极电流 (IC) | 0.5 A | 1 A | 1 A | 0.8 A | 1 A | - | - | 1 A | 1 A | - |
| 基于收集器的最大容量 | 25 pF | 20 pF | 15 pF | 8 pF | 35 pF | 20 pF | - | 20 pF | 20 pF | 20 pF |
| 集电极-发射极最大电压 | 50 V | 50 V | 65 V | 40 V | 25 V | 45 V | - | 40 V | 25 V | 45 V |
| JESD-609代码 | e0 | e0 | - | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 标称过渡频率 (fT) | 50 MHz | 50 MHz | 60 MHz | 300 MHz | 40 MHz | 40 MHz | - | 50 MHz | 50 MHz | 40 MHz |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | - |
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