Data Sheet
HN58C256AI Series
256k EEPROM (32-kword
×
8-bit)
Description
R10DS0218EJ0100
Rev.1.00
Oct 07, 2013
Renesas Electronics' HN58C256AI are electrically erasable and programmable ROMs organized as 32768-word
×
8-bit.
They have realized high speed low power consumption and high reliability by employing advanced MNOS memory
technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make
their write operations faster.
Features
•
Single 5 V supply: 5 V
±10%
•
Access time: 85 ns/100 ns (max)
•
Power dissipation
⎯
Active: 20 mW/MHz, (typ)
⎯
Standby: 110
μW
(max)
•
On-chip latches: address, data,
CE, OE, WE
•
Automatic byte write: 10 ms max
•
Automatic page write (64 bytes): 10 ms max
•
Data
polling and Toggle bit
•
Data protection circuit on power on/off
•
Conforms to JEDEC byte-wide standard
•
Reliable CMOS with MNOS cell technology
•
10
5
erase/write cycles (in page mode)
•
10 years data retention
•
Software data protection
•
There are lead free products
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
Page 1 of 16
HN58C256AI Series
Ordering Information
Orderable Part Name
HN85C256API85E
HN85C256API10E
HN85C256AFPI85E
HN85C256AFPI10E
HN85C256AFPI85EZ
HN85C256AFPI10EZ
HN85C256ATI85E
HN85C256ATI10E
Access
time
85ns
100ns
85ns
100ns
85ns
100ns
85ns
100ns
Package
600mil 28-pin plastic DIP
PRDP0028AB-A (DP-28V)
400mil 28-pin plastic SOP
PRSP0028DC-A (FP-28DV)
Shipping
Container
Tube
Tube
Tape and reel
28-pin plastic TSOP
PTSA0028ZB-A (TFP-28DBV)
Tray
Quantity
Max. 13 pcs/tube
Max. 325 pcs/inner box
Max. 25 pcs/tube
Max. 1,000 pcs/inner box
1,000 pcs/reel
Max. 60 pcs/tray
Max. 600 pcs/inner box
Pin Arrangement
HN58C256API/AFPI Series
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
(Top view)
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
CC
WE
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
I/O3
I/O4
I/O5
I/O6
I/O7
CE
A10
15
16
17
18
19
20
21
22
23
24
25
26
27
28
(Top view)
HN58C256ATI Series
14
13
12
11
10
9
8
7
6
5
4
3
2
1
A3
A4
A5
A6
A7
A12
A14
V
CC
WE
A13
A8
A9
A11
OE
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
Page 2 of 16
HN58C256AI Series
Pin Description
Pin Name
A0 to A14
I/O0 to I/O7
OE
CE
WE
V
CC
V
SS
NC
Address input
Data input/output
Output enable
Chip enable
Write enable
Power supply
Ground
No connection
Function
Block Diagram
V
CC
V
SS
I/O buffer
and
input latch
Control logic and timing
I/O0
High voltage generator
to
I/O7
OE
CE
WE
A0
to
Y decoder
Y gating
A5
Address
buffer and
latch
A6
to
X decoder
Memory array
A14
Data latch
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
Page 3 of 16
HN58C256AI Series
Operation Table
Operation
Read
Standby
Write
Deselect
Write inhibit
Data
polling
Program reset
Note:
1. Don’t care
V
IL
V
IH
V
IL
V
IL
×
×
V
IL
×
CE
V
IL
×*
1
V
IH
V
IH
×
V
IL
V
IL
×
OE
V
IH
×
V
IL
V
IH
V
IH
×
V
IH
×
WE
I/O
Dout
High-Z
Din
High-Z
—
—
Dout (I/O7)
High-Z
Absolute Maximum Ratings
Parameter
Power supply voltage relative to V
SS
Input voltage relative to V
SS
Operating temperature range*
2
Storage temperature range
Symbol
V
CC
Vin
Topr
Tstg
Value
–0.6 to +7.0
–0.5*
1
to +7.0*
3
–40 to +85
–55 to +125
Unit
V
V
°C
°C
Notes: 1. Vin min: –3.0 V for pulse width
≤
50 ns
2. Including electrical characteristics and data retention
3. Should not exceed V
CC
+ 1 V.
Recommended DC Operating Conditions
Parameter
Supply voltage
Input voltage
Operating temperature
Symbol
V
CC
V
SS
V
IL
V
IH
Topr
Min
4.5
0
–0.3*
1
3.0
–40
Typ
5.0
0
—
—
—
Max
5.5
0
0.6
V
CC
+ 0.3*
2
+85
Unit
V
V
V
V
°C
Notes: 1. V
IL
min: –1.0 V for pulse width
≤
50 ns
2. V
IH
max: V
CC
+ 1.0 V for pulse width
≤
50 ns
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
Page 4 of 16
HN58C256AI Series
DC Characteristics
(Ta = –40 to +85°C, V
CC
= 5.0 V
±10%)
Parameter
Input leakage current
Output leakage current
Standby V
CC
current
Operating V
CC
current
Symbol
I
LI
I
LO
I
CC1
I
CC2
I
CC3
Min
—
—
—
—
—
—
Output low voltage
Output high voltage
V
OL
V
OH
—
V
CC
×
0.8
Typ
—
—
—
—
—
—
—
—
Max
2
2
20
1
12
30
0.4
—
Unit
μA
μA
μA
mA
mA
mA
V
V
Test conditions
V
CC
= 5.5 V, Vin = 5.5 V
V
CC
= 5.5 V, Vout = 5.5/0.4 V
CE
= V
CC
CE
= V
IH
Iout = 0 mA, Duty = 100%,
Cycle = 1
μs,
V
CC
= 5.5 V
Iout = 0 mA, Duty = 100%,
Cycle = 85 ns, V
CC
= 5.5 V
I
OL
= 2.1 mA
I
OH
= –400
μA
Capacitance
(Ta = +25°C, f = 1 MHz)
Parameter
Input capacitance*
1
Output capacitance*
1
Note:
Symbol
Cin
Cout
Min
—
—
Typ
—
—
Max
6
12
Unit
pF
pF
Test conditions
Vin = 0 V
Vout = 0 V
1. This parameter is periodically sampled and not 100% tested.
R10DS0218EJ0100 Rev.1.00
Oct 07, 2013
Page 5 of 16
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
