TSDF1220/TSDF1220R
Silicon NPN High Frequency Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low-noise applications such as preamplifiers, Mixers and oscillators in analog and digital TV-systems
(e.g., satellite tuners) up to microwave frequencies.
Features
D
Low-power applications
D
Very low noise figure
D
High transition frequency f
T
= 12 GHz
2
1
1
2
94 9279
13 579
94 9278
95 10831
3
4
4
3
TSDF1220 Marking: F20
Plastic case (SOT 143)
1 = Collector; 2 = Emitter; 3 = Base; 4 = Emitter
TSDF1220R Marking: 20F
Plastic case (SOT 143)
1 = Collector; 2 = Emitter; 3 = Base; 4 = Emitter
Absolute Maximum Ratings
Parameters
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation T
amb
≤
60°C
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
9
6
2
40
200
150
–65 to +150
Unit
V
V
V
mA
mW
°C
°C
Maximum Thermal Resistance
Parameters
Junction ambient , mounted on glass fibre printed board
(25 x 20 x 1.5) mm
3
, plated with 35
m
m Cu
Symbol
R
thJA
Maximum
450
Unit
K/W
TELEFUNKEN Semiconductors
Rev. A3, 28-Oct-97
1 (5)
TSDF1220/TSDF1220R
Electrical DC Characteristics
T
amb
= 25
_
C
Parameters / Test Conditions
Collector emitter cut-off current
V
CE
= 12 V, V
BE
= 0
Collector-base cut-off current
V
CB
= 10 V
Emitter-base cut-off current
V
EB
= 1 V
Collector-emitter breakdown voltage
I
C
= 1 mA
Collector-emitter saturation voltage
I
C
= 30 mA, I
B
= 3 mA
DC forward current transfer ratio
V
CE
= 5 V, I
C
= 20 mA
1)
t
p
/ T = 0.01, t
p
= 0.3 ms
Symbol
I
CES
I
CBO
I
EBO
V
(BR)CEO
1)
V
CEsat
h
FE
50
6
0.1
100
0.5
150
Min.
Typ.
Max.
100
100
2
Unit
m
A
nA
m
A
V
V
Electrical AC Characteristics
T
amb
= 25
_
C
Parameters / Test Conditions
Transition frequency
V
CE
= 5 V, I
C
= 20 mA, f = 1 GHz
Collector-base capacitance
V
CB
= 1 V, f = 1 MHz
Collector-emitter capacitance
V
CE
= 1 V, f = 1MHz
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
Noise figure
V
CE
= 5 V, I
C
= 3 mA, Z
S
= Z
opt,
Z
L
= 50
W
,
f = 2 GHz
Power gain
V
CE
= 5 V, I
C
= 20 mA, Z
S
= Z
Lopt
,
Z
L
= 50
W
f = 2 GHz
Transducer gain
V
CE
= 5 V, I
C
= 20 mA, Z
0
= 50
W,
f = 2 GHz
Symbol
f
T
C
cb
C
ce
C
eb
Min.
Typ.
12
0.3
0.35
0.5
Max.
Unit
GHz
pF
pF
pF
F
1.2
dB
G
pe
S
21e
2
20
12.5
dB
dB
2 (5)
TELEFUNKEN Semiconductors
Rev. A3, 28-Oct-97
TSDF1220/TSDF1220R
Typical Characteristics
(T
j
= 25
_
C unless otherwise specified)
C
cb
– Collector Base Capacitance ( pF )
0
96 12159
300
P
tot
– Total Power Dissipation ( mW )
250
200
150
100
50
0
20
40
60
80
100 120 140 160
T
amb
– Ambient Temperature (
°C
)
0.5
0.4
0.3
0.2
0.1
0
0
1
2
3
4
5
V
CB
– Collector Base Voltage ( V )
14289
Figure 1.. Total Power Dissipation vs. Ambient Temperature
Figure 3.. Collector Base Capacitance vs.
Collector Base Voltage
3.0
20
f
T
– Transition Frequency ( GHz )
16
12
8
4
0
0
14288
F – Noise Figure ( dB )
V
CE
=5V
f=2GHz
2.5
2.0
1.5
1.0
0.5
0
V
CE
=5V
f=1GHz
Z
S
=50
W
V
CE
=3V
f=1GHz
5
10
15
20
25
30
14290
0
5
10
15
20
25
I
C
– Collector Current ( mA )
I
C
– Collector Current ( mA )
Figure 2.. Transition Frequency vs. Collector Current
Figure 4.. Noise Figure vs. Collector Current
TELEFUNKEN Semiconductors
Rev. A3, 28-Oct-97
3 (5)
TSDF1220/TSDF1220R
Dimensions of TSDF1220 in mm
96 12240
Dimensions of TSDF1220R in mm
96 12239
4 (5)
TELEFUNKEN Semiconductors
Rev. A3, 28-Oct-97
TSDF1220/TSDF1220R
Ozone Depleting Substances Policy Statement
It is the policy of
TEMIC TELEFUNKEN microelectronic GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs).
The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH
semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
TEMIC
can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
TELEFUNKEN Semiconductors
Rev. A3, 28-Oct-97
5 (5)
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